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A promising CuOx/WO3 p-n heterojunction thin-film photocathode fabricated by magnetron reactive sputtering
摘要： A CuOx/WO3 thin-film based on p-n heterojunction proposed as a highly performance and stable photocathode. The CuOx/WO3 thin-film was deposited by magnetron reactive sputtering layer by layer, followed with slow rate annealing in O2 ambient. This is an excellent method for high-quality and uniform composite thin-film deposition with large areas at a high growth rate. The optimized CuOx/WO3 thin-film photocathode after slow rate annealing at 500 °C in O2 provides an obviously enhanced photoinduced current density of -3.8 mA cm-2 at a bias potential of -0.5 V (vs. Ag/AgCl), which value is 1.5 times higher than that of bared CuOx thin-film. This highly enhanced photoelectrochemical performance is attributed to p-n heterojunction, which accelerates the photogenerated electrons and holes transfer to n-WO3 and p-CuOx, thereby accelerate the separation of photogenerated carries. In addition, WO3 layer covered on the surface of CuOx thin film can improve the stability of Cu2O in electrolytes.
关键词： p-n heterojunction,Tungsten oxide,Photoelectrochemical,Copper oxide,Magnetron reactive sputtering
更新于2025-09-23 15:22:29
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Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells
摘要： Reactive sputtered boron-doped zinc oxide (BZO) film was deposited from argon, hydrogen and boron gas mixture. The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target. Textured surface was obtained in the as-deposited films. The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio. By varying the gas concentration ratio, the best obtained resistivity ~ 6.51×10-4 Ω-cm, mobility ~ 19.05 cm2 V-1 s-1 and sheet resistance ~ 7.23 Ω/□ were obtained. At lower wavelength of light, the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are >85%. We also fabricated amorphous silicon (a-Si) thin film solar cell on the best obtained BZO layers. The overall efficiency of the a-Si solar cell is 8.14%, found on optimized BZO layer.
关键词： amorphous silicon,BZO,solar cells,Zinc oxide (ZnO),Magnetron reactive sputtering
更新于2025-09-12 10:27:22