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Characteristics of Vanadium Oxide Thin Films Fabricated by Unbalanced Magnetron Sputtering for Smart Window Application
摘要： Vanadium oxide (VOx) thin films were deposited by an unbalanced magnetron (UBM) sputtering system with a vanadium metal target and O2 reaction gas, and thermally treated at various annealing temperatures. In this work, the structural, electrical, and optical properties of the fabricated VOx films with various annealing temperatures were experimentally investigated. The UBM sputter grown VOx thin films exhibited amorphous structure, and had a very weak peak of V2O5 (002) owing to very thin films. However, the crystallite size of VOx films increased with increasing annealing temperature. The surface roughness of VOx films and average transmittance decreased with increasing annealing temperature. The resistivity of VOx films also decreased with increasing annealing temperature, while the electrical properties of films improved.
关键词： Transmittance,Unbalanced Magnetron Sputtering,Vanadium Oxide,Surface Roughness,Resistivity
更新于2025-09-23 15:23:52
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[IEEE 2018 International IEEE Conference and workshop in óbuda on Electrical and Power Engineering (CANDO-EPE) - Budapest, Hungary (2018.11.20-2018.11.21)] 2018 International IEEE Conference and Workshop in óbuda on Electrical and Power Engineering (CANDO-EPE) - Plasma ignition and current control considerations for magnetron sputtering power supplies
摘要： Physical vapor deposition processes require different types of special power supplies for the ignition and sustaining of the plasma inside the sputtering chamber. The paper identifies some requirements for the design of a pulsed DC converter. Experiments have been carried out to identify the current-voltage characteristics of the vacuum chamber with the supply of different gases, and gas mixtures in the usable pressure domain. The vacuum chamber was supplied with voltage and current impulse trains with various parameters in order to acquire relevant data regarding the gas breakdown in pulsed power mode. A power electronic converter topology and control routine has been proposed, which is suitable for plasma ignition and discharge current control. The proof of concept has been demonstrated with the help of the magnetron sputtering chamber supplied by a test circuit.
关键词： current control,power electronic converter,plasma ignition,magnetron sputtering
更新于2025-09-23 15:23:52
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - The Effect of H<inf>2</inf>/Ar Plasma Treatment Over Photoconductivity of Sige Nanoparticles Sandwiched Between Silicon Oxide Matrix
摘要： The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.
关键词： hydrogenation,magnetron sputtering,photoconductivity,HiPIMS,SiGe,SiO2
更新于2025-09-23 15:22:29
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Enhanced Photoconductivity of SIGE-Trilayer Stack by Retrenching Annealing Conditions
摘要： We studied the effect of short term furnace annealing over the photoconductive properties of tristacked layer i.e. TiO2/(SiGe/TiO2)3. The structure was prepared by depositing alternate layers of TiO2 and SiGe films, using sputtering technique. A direct-current magnetron transmission electron microscopy and grazing incidence spectroscopy was used to analyze the morphology of the structure. Photoconductive properties were studied by measuring photocurrent spectra at different applied voltages and temperatures. Tristack layers were obtained with 5-10 nm SiGe nanocrystals (NCs) by annealing at 600 °C for 5 min. No sign of SiO2 formation was found inside stacked layers. A maximum in the photocurrent spectra was observed at 994 nm at 300 K but it red-shifted gradually to 1045 nm with decrease in temperature to 100 K. This transition in peak maxima is attributed to SiGe NCs, due to lattice vibration and to contribution of non-radiative recombination at low temperatures.
关键词： TiO2,magnetron sputtering,nanocrystals,photoconductivity,SiGe,annealing
更新于2025-09-23 15:22:29
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Gas Breakdown and Discharge Formation in High-Power Impulse Magnetron Sputtering
摘要： Discharge behaviors of high-power impulse magnetron sputtering with different targets have been investigated. Distinct current–voltage curves and target current waveforms are observed. Breakdown voltage and the maximum target current show a periodic drop with the increase of atomic number in subgroups and periods. The target current density is found to be mainly affected by the secondary electron emission yield. Thus, its magnitude is unable to directly evaluate the ionization degree of sputtered atoms in high-power impulse magnetron sputtering (HiPIMS) process. In this paper, the interactive influence of secondary electron emission, sputter yield, and ionization energy on the ionization degree of sputtered atoms is discussed based on the analysis of the voltage and current characteristics. As a result, targets can be categorized into three sorts according to the ionization degree: 1) low ionization degree targets, such as Ag and C less than 10%; 2) intermediate ionization degree targets like Cr and Cu with 55% and 35%; 3) Ti, Zr, and Mo targets with the second ionization processes. These results provide institutive operation ranges for the state-of-the-art HiPIMS applications.
关键词： optical emission spectroscopy (OES),ionization degree,Current waveform,gas breakdown,high-power impulse magnetron sputtering (HiPIMS)
更新于2025-09-23 15:22:29
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Highly-transparent, UV-B protective Al-Zn-O films with potential application in greenhouse screen systems
摘要： Extremely thin, Al-Zn-O composite films (21±6 nm) are deposited on fused silica substrates under various percentages of oxygen in the oxygen/argon gas mixture (3, 4.5, 6, and 7.5 %). The films are prepared by a cylindrical DC magnetron sputtering system, utilizing a single compound target. The effects of the oxygen percentage on the compositional, morphological, and optical properties of the films are investigated by energy-dispersive X-ray spectroscopy, scanning electron microscopy, UV-Visible spectrophotometry, and atomic force microscopy. The chemical composition of the films is Al1 Z1+X O with 0.2<X<1. The average visible transmittance of 93.6% with a high level of uniformity is obtained when the sputtering deposition performs under the oxygen percentage of 6%. It is found that the optical band gap of the films can be tailored towards higher energy by increasing oxygen percentage; however, the adjustable range is not so significant. The results offer cost-efficient films with high, uniform transmittance in the visible region and with an ability to attenuate more than 10% of incident UV-B radiation (280-315 nm). This type of films can potentially be included in greenhouse screen systems to effectively protect the plants from the elevated UV-B radiation without altering natural conditions.
关键词： Al-Zn-O film,cylindrical DC magnetron sputtering,band gap tailoring,effective UV-B protection of plants
更新于2025-09-23 15:22:29
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Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
摘要： Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.
关键词： optical emission spectroscopy,Langmuir probe,thin film,magnetron sputtering,Copper oxide
更新于2025-09-23 15:22:29
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Effect of temperature and bias voltage on electrical and electrochemical properties of diamond-like carbon films deposited with HiPIMS
摘要： The relatively high electrical resistivity of diamond-like carbon (DLC) film is one of the main drawbacks when applied in electronic device. In this study, DLC films were synthesized on 304 stainless steels by high power impulse magnetron sputtering (HiPIMS) process and the effect of deposition temperature and bias voltage on the microstructure, electrical and electrochemical properties, hardness and adhesion strength of the DLC films were investigated. The sp2/sp3 ratio of DLC films first decreased then increased and the surface became denser as bias voltage increasing from 0 to -400 V. While the film turned into graphite-like structure and became incompact when deposition temperature rose from 100 °C to 300 °C. The interfacial contact resistance (ICR) got reduced by increasing bias voltage and deposition temperature. However, as the deposition temperature increased to 300 °C the anticorrosion ability and hardness of DLC films deteriorated. The DLC films deposited at 300 °C presented soft and had better adhesion strength than hard DLC films deposited at 100 °C. DLC films deposited at -400 V bias and 300 °C had the lowest ICR while DLC films deposited at -400 V bias and 100 °C had the best performance when ICR, corrosion resistance and hardness were all taken into consideration.
关键词： Electrochemical corrosion,Substrate temperature,High power impulse magnetron sputtering,Interfacial conductivity,Diamond-like carbon,Bias voltages
更新于2025-09-23 15:22:29
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‘Planetary’ silver nanoparticles originating from a magnetron sputter plasma
摘要： In a gas aggregation cluster source, nanoparticles are formed by aggregation of single atoms to particles as well as by agglomeration of smaller particles to form larger particles. Because the small particles are often electrically charged, it is possible that particles are mutually attracted or repelled by electric forces. In this work we report the observation of bound multi-nanoparticle systems which are the result of the electrical and centrifugal forces acting on nanoparticles in a magnetron sputtering cluster source. Transmission electron microscopy analysis of the deposited ‘planetary’ nanoparticle systems exhibits characteristic inter-particle distances and sizes, consistent with different charge states of the particles. Simulations confirm the presence of metastable bound nanoparticle systems up to at least 7/8 satellites. The discovery of such ‘planetary’ nanoparticle systems inside a cluster source opens up possibilities for more research into their properties and how they can be further controlled and explored.
关键词： planetary,silver nanoparticles,particle orbits,satellites,gas aggregation cluster source,magnetron sputtering
更新于2025-09-23 15:22:29
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Study of the effect of irradiation with Fe<sup>7+</sup> ions on the structural properties of thin TiO<sub>2</sub> foils
摘要： Thin foils based on the TiO2 phase of brookite, 620 nm thick, were obtained by magnetron sputtering. The samples were irradiated at the DC-60 heavy ion accelerator of the Astana branch of the Institute of Nuclear Physics with Fe7+ ions with an energy of 85 MeV with a fluence of 1×1011 to 1×1014 ions/cm2. The dependences of the change in the concentration of defects in the structure of thin films on the radiation dose are established. It has been established that an increase in the irradiation fluence of up to 1014 ions/cm2, characteristic of the formation of defect overlap regions, leads to a sharp decrease in the degree of crystallinity and an increase in the lattice parameters. That is caused by the formation of a large number of disorder regions and displaced atoms in the structure, which migrate along the crystal lattice to additional distortions and voltages, with the subsequent formation of hillocks.
关键词： ionizing radiation,thin foils,crystal structure defects,magnetron sputtering
更新于2025-09-23 15:22:29