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A Comparative Study of Gas Sensing Properties of Tungsten Oxide, Tin Oxide and Tin-Doped Tungsten Oxide Thin Films for Acetone Gas Detection
摘要： Nowadays, various metal oxide thin films have been used for the purpose of gas sensing. This research depicts a comparison of gas sensing properties among four different metal oxide thin films, namely, tungsten dioxide (WO2), tungsten trioxide (WO3), tin oxide (SnO2) and tin doped tungsten trioxide (Sn-doped WO3), for detecting acetone gas. Each metal oxide thin film was subjected to acetone gas flow of various concentrations and the corresponding changes in resistance were calculated. Characterizations such as x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and gas sensing characterization for recording resistance changes have been performed. Each film was annealed at different temperatures for 1 h (WO2 and WO3 at 500°C, SnO2 at 300°C and Sn-doped WO3 at 400°C) so as to achieve an optimum grain size for sensing. The XRD patterns reveal formation of an orthorhombic phase of WO2, hexagonal phase of WO3 and orthorhombic phase of SnO2. AFM and SEM depict clear images of grain boundaries on the film. SnO2 has been found to be the best thin film for sensing acetone gas. Operational optimum temperature for sensing acetone gas has been calculated for each thin film (260°C for WO2, 220°C for WO3, 360°C for SnO2 and 300°C for Sn-doped WO3). It can detect a very low concentration of 1.5 ppm acetone gas with a good resistance response change of 30%. Various concentrations of acetone gas, namely, 1.5 ppm, 3 ppm, 5 ppm, 7 ppm, 10 ppm, 15 ppm and 20 ppm, have been detected using these metal oxide thin films, and thus the comparison has been made. The response time for SnO2 is approximately 3 min and recovery time is approximately 4 min.
关键词： tungsten oxide,acetone gas detection,topography,tin oxide,Metal oxide thin films,surface metrology,gas sensing,tin-doped tungsten oxide
更新于2025-09-23 15:23:52
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Optical Thin Films of Metal Oxides Produced by the Sol-Gel Method for Photovoltaic Applications
摘要： The use of thin films in optoelectronic and photovoltaic devices is aimed at improving the physical properties of the substrate material. The modification of the surface of the silicon substrate is thus one of the greatest challenges in research on photovoltaic materials, in order to achieve even greater efficiency or better adapt their properties depending on the application. The technologies of applying layers vary depending on the effect to be obtained and the material from which the layer is formed. In practice, the most common method is chemical vapor deposition and physical vapor deposition, and the most commonly applied optical materials are SiO2, TiO2 and Si3N4.This paper presents the results of investigations on morphology and optical properties of the prepared aluminium oxide thin films. Thin films were prepared with use of sol-gel spin coating method. Surface morphology studies were carried out using an atomic force microscope. To characterize the surface of the thin films, 3D images and histograms of the frequency of individual inequalities were made. In order to characterize the optical properties of Al2O3 thin films, the reflectance and light transmission tests were performed using a spectrophotometer. Optical constants were determined using a spectroscopic ellipsometer. Results and their analysis show that the sol-gel method allows the deposition of homogenous thin films of Al2O3 with the desired geometric characteristics and good optical properties. Uniform, continuous thin layers with a roughness not exceeding a few nanometres were deposited. Their deposition enabled to reduce the reflection of light from the polished substrate below 15% in a wide range (425-800nm) while maintaining high transparencies (over 90%). The obtained results causes that mentioned thin films are good potential material for optics, optoelectronics and photovoltaics.
关键词： metal oxide,thin films,sol-gel
更新于2025-09-16 10:30:52
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Progresses in Chemical Sensor || Air-Suspended Silicon Micro-Bridge Structures for Metal Oxide- Based Gas Sensing
摘要： Maintaining specific temperature is a key parameter for most of the gas sensing materials, particularly for metal oxide-based thin film layers, to operate them more efficiently to detect different gaseous (or vapor) species at ppm and ppb concentration levels. For field applications, battery-operated micro-gas-sensors, power dissipation and the required temperature stability are to be maintained with a close tolerance for better signal stability and also to analyze the generated data from the sensing element. This chapter mainly focuses on several metal oxide films to highlight the base temperature and its creation on silicon-based platforms. Air-suspended structures are highlighted, and a comparison is drawn between simple and MEMS-based structures from the power dissipation point of view. Ease of fabrication and operation limitations are explained with fabrication issues.
关键词： Platinum resistance thermometer,Gas sensing devices,Platinum micro-heater,Surface micromachining,MEMS,Metal oxide thin films
更新于2025-09-09 09:28:46