- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2018 15th IEEE India Council International Conference (INDICON) - Coimbatore, India (2018.12.16-2018.12.18)] 2018 15th IEEE India Council International Conference (INDICON) - Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Based Metal-Semiconductor-Metal Photodetector
摘要： Organic-inorganic perovskite CH3NH3PbI3 is used for the fabrication of thin film photodetector, which is synthesized via the sol-gel chemical route. The prepared hybrid perovskite CH3NH3PbI3 thin film are characterized by X-ray diffraction (XRD), high resolution scanning electron microscope (HRSEM), photoluminescence. XRD result confirmed the formation of the tetragonal phase of CH3NH3PbI3 with crystallite size 15.7 nm. HRSEM image of hybrid perovskite CH3NH3PbI3 thin film confirmed the uniform distribution of particles and average particle size 30 nm. An efficient photoluminescence band is observed at 1.59 eV in hybrid perovskite CH3NH3PbI3 thin films at ambient temperature when excited with 405 nm wavelength light. Finally, the hybrid perovskite CH3NH3PbI3 thin film is investigated for electrical and optical response using fabricated metal-semiconductor-metal (MSM) photodetector.
关键词： Organic-inorganic hybrid perovskite,Responsivity,Metal-semiconductor-metal,Photodetector
更新于2025-09-19 17:13:59
-
Improved spectral and temporal response of MSM photodetectors fabricated on MOCVD grown spontaneous AlGaAs superlattice
摘要： A co-planar metal-semiconductor-metal nonsymmetrical back to back Schottky diode photodetector using natural superlattice AlGaAs grown by metalorganic vapor phase epitaxy on GaAs (100) has been reported. The detection efficiency and photoresponse of the superlattice based device are found significantly superior compared to the one based on high temperature annealed homogeneous AlGaAs. Under a forward bias of 1 V, the peak values of responsivity, detectivity and sensitivity were 10.133 mA/W, 7.6 × 1011 cmHz1/2W?1, 81.06 cm2/W for the device with as-grown natural superlattice and 1.14 mA/W, 7.05 × 1010 cmHz1/2W?1, 2.82 cm2/W for the device with homogeneous composition of AlGaAs, respectively. Besides, the device with natural superlattice structure showed much faster response to the pulsed light with rise and decay time of 560 μs and 1 ms as compared to 2 and 7 ms, respectively for the device with disordered bulk AlGaAs. The superior spectral and temporal characteristics of the device are explained by a model based on a third diode representing the net effect due to the superlattice modulations along with two Schottky diodes at the metal-semiconductor junctions. The third barrier, which is basically due to the periodic modulation in aluminium composition, plays an important role in enhancement of the photocurrent owing to the activation of the superlattice channels under light while keeping the dark current small. The fast sweeping of the photogenerated carries by the intrinsic electric field at the heterointerfaces in the active semiconducting layer makes the characteristic times of the device with the superlattice structures much smaller than one with homogeneous AlGaAs. Degradation in photoresponse and speed is attributed to the interdiffusion as an effect of thermal annealing.
关键词： AlGaAs/GaAs,Spectral response,Metal-semiconductor-metal photodetector,Natural superlattice,Temporal response
更新于2025-09-12 10:27:22