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[IEEE 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS) - San Jose, Costa Rica (2020.2.25-2020.2.28)] 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS) - Advancing Uncooled Infrared Imagers Using An Open-Circuit Voltage Pixel
摘要： A topology leveraging a photodetector in the forward bias region generating an open-circuit voltage is proposed. Connecting the anode of the photodetector to the gate of a MOSFET device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP). Theoretical analysis outlining the effective photodetector response and performance benefits is described. An integrated circuit (IC) with direct-injection pixels modified to support the VocP front-end and analog output readout fabricated in a CMOS 0.18 μm technology is also presented. The IC allows testing of mid-wave infrared (IR) photodiodes operating in both the photocurrent and VocP modes. The VocP pixel is compared to a traditional reverse bias current mode photodetector configuration. Simulation, modeling, and measurement show improved sensitivity and faster response time for the VocP over direct photocurrent detection.
关键词： model,ROIC,open-circuit voltage,readout,MWIR,Mid-wave,Voc
更新于2025-09-23 15:21:01
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Recent progress on infrared photodetectors based on InAs and InAsSb nanowires
摘要： In recent years, quasi-one-dimensional semiconductor nanowires have attracted numerous research interests in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, an III-V compound semiconductor structure with a narrow bandgap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation, and performance characteristics have attracted increasing attention, enabling high sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states, and metal contacts. Then, three solutions, including the visible-light assisted infrared photodetection technology, the vertical nanowire array technology, and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength coverage of photodetectors. Finally, the potentials and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
关键词： nanowire,vertical array,InAsSb,mid-wave infrared photodetector,InAs
更新于2025-09-19 17:13:59
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High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice
摘要： High-speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors have been focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaAsSb type-II superlattice with a 50% cutoff wavelength at ~5.3 μm at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 μm circular diameter device under -5 V applied bias. Limitations on the detector high-speed performance are also discussed.
关键词： high-speed photodetector,mid-wave infrared photodetector,Interband cascade infrared photodetector
更新于2025-09-16 10:30:52
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On the Choice of Metallic Contacts with Polycrystalline PbSe Films and Its Effect on Carrier Sweepout and Performance in Mid-wave Infrared (MWIR) Photodetectors
摘要： Carrier sweepout is one of the many phenomena that limit critical performance metrics of mid-wave infrared (MWIR) photodetectors, such as the photoconductive gain (c), photoresponsivity (g), specific detectivity (D*), and hence the overall performance of cameras built using these detectors. Preventing carrier sweepout in photoconductors at high applied bias and modulation frequencies can increase the electrical operating bias range and consequently expand the possible read-out integrated circuit design space and capabilities. Polycrystalline PbSe-based MWIR photodetectors have shown great potential for building integrated high-performance devices. We discuss herein the choice of metallic contacts for such detectors built by Northrop Grumman Systems Corp. under this program using the complex physics of carrier trapping and the interface of the contact metal with the photosensitive PbSe film that allows these detectors to be essentially free of carrier sweepout even at high applied electric fields.
关键词： band theory,photoresponsivity,PbSe,Mid-wave infrared detectors,carrier sweepout
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - First Principles Investigation into Graphene-PbSe MidWave IR (MWIR) Photodetector Physics
摘要： Polycrystalline PbSe is an established low cost material for mid wave-IR photodetection. In this work, we describe a novel design of PbSe MWIR detector that incorporates a graphene layer resulting in three possible distinct modes of operation, depending on the interface design between the functionalized PbSe and Graphene. Using Density Functional Theory (DFT) based simulations we investigate the chemistry of this interface, in terms of back-bonding as well as van-der Waals force, that give rise to rich behavior that is obtainable from this material stack, promising radical new designs for scaled high performance CMOS integrable MWIR photodetectors.
关键词： Photodetector,Graphene,PbSe,Mid-Wave IR,Density Functional Theory
更新于2025-09-11 14:15:04