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Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small <i>V</i> <sub/>oc</sub> Deficit of 0.33 V
摘要： 1.5–1.6 eV bandgap Pb-based perovskite solar cells (PSCs) with 30–31% theoretical efficiency limit by the Shockley–Queisser model achieve 21–24% power conversion efficiencies (PCEs). However, the best PCEs of reported ideal-bandgap (1.3–1.4 eV) Sn–Pb PSCs with a higher 33% theoretical efficiency limit are <18%, mainly because of their large open-circuit voltage (Voc) deficits (>0.4 V). Herein, it is found that the addition of guanidinium bromide (GABr) can significantly improve the structural and photoelectric characteristics of ideal-bandgap (≈1.34 eV) Sn–Pb perovskite films. GABr introduced in the perovskite films can efficiently reduce the high defect density caused by Sn2+ oxidation in the perovskite, which is favorable for facilitating hole transport, decreasing charge-carrier recombination, and reducing the Voc deficit. Therefore, the best PCE of 20.63% with a certificated efficiency of 19.8% is achieved in 1.35 eV PSCs, along with a record small Voc deficit of 0.33 V, which is the highest PCE among all values reported to date for ideal-bandgap Sn–Pb PSCs. Moreover, the GABr-modified PSCs exhibit significantly improved environmental and thermal stability. This work represents a noteworthy step toward the fabrication of efficient and stable ideal-bandgap PSCs.
关键词： ideal bandgap,perovskite solar cells,mixed tin–lead perovskites,guanidinium bromide,molecular doping
更新于2025-09-23 15:21:01
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Enhanced stability and efficiency in inverted perovskite solar cells through graphene doping of PEDOT:PSS hole transport layer
摘要： Poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) plays a relevant role in the device performance as hole extraction layer (HTL) of inverted perovskite solar cells. Here, we show a simple low-temperature spin coating method for obtaining homogenous graphene-doped thin films of PEDOT:PSS with improved electrical conductivity without decreasing optical transmittance. Moreover, the crystallinity and stability in ambient conditions of the perovskite grown on it are enhanced. The hydrophobic character of graphene probably blocks undesirable reactions hampering degradation. By impedance spectroscopy it is demonstrated better charge extraction and reduction of recombination mechanisms at the doped-HTL/perovskite interface, resulting in improved photovoltaic parameters of the solar cell and greater stability at room operation conditions thus providing a simple and cost-effective method of preparing solar cells based on hybrid perovskites.
关键词： perovskite solar cell,PEDOT:PSS,doping,graphene,hole transport layer,impedance spectroscopy
更新于2025-09-23 15:21:01
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Efficiency Enhancement of Cu(In,Ga)(S,Se)2 Solar Cells by Indium-doped CdS Buffer Layer
摘要： Improving power conversion efficiency of photovoltaic devices has been widely investigated, however, most of researches mainly focus on the modification of the absorber layer. Here, we present an approach to enhance the efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cells simply by tuning the CdS buffer layer. The CdS buffer layer was deposited by chemical bath deposition. Indium doping was done during the growth process by adding InCl3 into the growing aqueous solution. We show that the solar cell efficiency is increased by properly Indium doping. Based on the characteristics of the single CdS (with or without In-doping) layer and of the CIGSSe/CdS interface, we conclude that the efficiency enhancement is attributed to the interface-defect passivation of heterojunction, which significantly improves both open circuit voltage and fill factor. The results were supported by SCAPS simulations, which suggest that our approach can also be applied to other buffer systems.
关键词： CdS buffer layer,interface passivation,SCAPS simulations,Indium doping,CIGSSe-based solar cell
更新于2025-09-23 15:21:01
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Highly green fluorescent Nb2C MXene quantum dots
摘要： Here two dimensional Nb2C quantum dots with green fluorescence were fabricated for the first time with quantum yield (QY) up to 19%, the highest reported Nb2C dots so far with good photostability and pH stability. The S,N doping on Nb2C were considered as the main reason to enhance the high QY of Nb2C dots and was proved by the density functional theory (DFT) calculation. It was demonstrated that the fluorescent probe could be utilized effectively for 3D brain organoid labeling and embraces huge prospects in biological sensing.
关键词： green fluorescence,S,N doping,Nb2C quantum dots,3D brain organoid labeling,quantum yield
更新于2025-09-23 15:21:01
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Deposition of boron-doped nanocrystalline silicon carbide thin films using H2-Ar mixed dilution for the application on thin film solar cells
摘要： Hydrogen-argon mixed dilution has been applied for the deposition of boron-doped nanocrystalline silicon carbide (nc-SiCx) thin films. The variations of structural, compositional, electrical and optical properties with the varying H2/Ar ratio are systemically investigated through various characterizations. It is shown that by using H2-Ar mixed dilution for deposition, B-doped nc-SiCx thin film possessing both wide optical band gap (~2.22 eV) and high conductivity (~1.9 S/cm) can be obtained at the H2/Ar flow ratio of 360/140. In addition, the B-doped nc-SiCx thin films are fabricated as the window layers of a-Si thin film solar cells, and the highest conversion efficiency (8.13%) is obtained when applying the window layer with the largest optical band gap energy.
关键词： PECVD,solar cell,B-doping,thin film,silicon carbide
更新于2025-09-23 15:21:01
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[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Tunable WSe <sub/>2</sub> phototransistor enabled by electrostatically doped lateral p-n homojunction
摘要： This study demonstrates an approach to tune the responsivity and detectivity of a WSe2 phototransistor by incorporating an electrostatically doped lateral p-n junction in the form of side gates to the transistor channel. The resulting decrease in dark current and enhancement in photocurrent by externally injected carriers into the conduction channel leads to improved photodetection with a fast response time (τ).
关键词： photodetection,phototransistor,lateral p-n junction,electrostatic doping,WSe2
更新于2025-09-23 15:21:01
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Unraveling Doping Capability of Conjugated Polymers for Strategic Manipulation of Electric Dipole Layer toward Efficient Charge Collection in Perovskite Solar Cells
摘要： Developing electrical organic conductors is challenging because of the difficulties involved in generating free charge carriers through chemical doping. To devise a novel doping platform, the doping capabilities of four designed conjugated polymers (CPs) are quantitatively characterized using an AC Hall-effect device. The resulting carrier density is related to the degree of electronic coupling between the CP repeating unit and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), and doped PIDF-BT provides an outstanding electrical conductivity, exceeding 210 S cm?1, mainly due to the doping-assisted facile carrier generation and relatively fast carrier mobility. In addition, it is noted that a slight increment in the electron-withdrawing ability of the repeating unit in each CP diminishes electronic coupling with F4-TCNQ, and severely deteriorates the doping efficiency including the alteration of operating doping mechanism for the CPs. Furthermore, when PIDF-BT with high doping capability is applied to the hole transporting layer, with F4-TCNQ as the interfacial doping layer at the interface with perovskite, the power conversion efficiency of the perovskite solar cell improves significantly, from 17.4% to over 20%, owing to the ameliorated charge-collection efficiency. X-ray photoelectron spectroscopy and Kelvin probe analyses verify that the improved solar cell performance originates from the increase in the built-in potential because of the generation of electric dipole layer.
关键词： conjugated polymers,conducting polymers,doping,molecular electronics,solar cells
更新于2025-09-23 15:21:01
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The fox and the hound: in-depth and in-grain Na doping and Ga grading in Cu(In,Ga)Se <sub/>2</sub> solar cells
摘要： Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells require appropriate depth and lateral distributions of alkali metal dopants and gallium to attain world record photovoltaic energy conversion. The two requirements are interdependent because sodium is known to hamper In/Ga interdiffusion in polycrystalline films. However, such a fact is challenged by recent findings where sodium appears to enhance In/Ga interdiffusion in monocrystalline films. This contribution reviews closely the two cases to the benefits of grain boundary engineering in CIGS. A computational model reveals why Na induces In accumulation at CIGS grain boundaries, confining Ga to grain interiors. The positive technological implications for wider gap chalcopyrites are stressed.
关键词： sodium doping,gallium grading,CIGS,solar cells,grain boundary engineering
更新于2025-09-23 15:21:01
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One-step growth of centimeter-scale doped multilayer MoS <sub/>2</sub> films by pulsed laser-induced synthesis
摘要： Recently, two-dimensional MoS2 has attracted interest for applications in electronics, optics, energy storage, and catalysis. Furthermore, n-type or p-type doping of MoS2 can result in improved film properties, thereby expanding the range of applicability. However, the rapid preparation of large-scale MoS2 films and the e?ective doping of such films remain challenging. Herein, we report on a one-step growth method called pulsed laser-induced synthesis (PLIS) that can resolve these challenges and can quickly (5–10 min) prepare centimeter-scale MoS2 films directly and selectively on a substrate. A continuous length of up to 1.412 cm can be achieved with MoS2 films prepared by the described in situ doping of noble metals (Au, Pt, and Pd) to convert MoS2 into a p-type semiconductor was realized, consistent with the results obtained from first-principles calculations. The STEM images reveal that the phenomena of surface modification and cation substitution occur in the doped MoS2 films. The doped MoS2 films were further processed into a p-type field effect transistor with an on/off ratio of 105. Importantly, this technique can be applied to other transition metal dichalcogenides (TMDCs) while employing various doping elements; this scheme provides an innovative method for upscaling production and large-area doping of TMDC thin films.
关键词： TMDCs,MoS2,field effect transistor,doping,pulsed laser-induced synthesis
更新于2025-09-23 15:21:01
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A Review: Crystal Growth for High-Performance All-inorganic Perovskite Solar Cells
摘要： Recently, halide perovskites have become one of the most promising materials for solar cells owing to their outstanding photoelectric performance. Among them, metal halide all-inorganic perovskites (CsPbX3; where X denotes a halogen) show superior thermal and light stability. In particular, the power conversion efficiency (PCE) of perovskite solar cells (pero-SCs) based on a CsPbX3 active layer has shown a steady increase from 2.7% to 19.03% with the improvement of the CsPbX3 crystal quality. In this review, we summarize methodologies that have been employed for controlling the growth of all-inorganic perovskite films so far, including precursor solution deposition, substrate modification, composition doping, and surface engineering. Furthermore, we discuss the effect of perovskite crystal characteristics on defects and perovskite film morphology, both of which are closely related to device performance. Finally, conclusions and perspectives are presented along with useful guidelines for developing all-inorganic pero-SCs with high PCE and robust stability.
关键词： light stability,halide perovskites,precursor solution deposition,all-inorganic perovskites,surface engineering,substrate modification,thermal stability,power conversion efficiency,CsPbX3,composition doping,solar cells,crystal growth
更新于2025-09-23 15:21:01