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Nano-rheology printing of sub-0.2 <i>μ</i> m channel length oxide thin-film transistors
摘要： Down-scaling of the channel length of a fully solution-processed oxide thin-film transistor (TFT) to the nanometer-scale is the key to accessing next-generation devices for Internet-of-Things technology. In this work, we report on the fabrication of an oxide TFT with a channel length of 160 nm, which is far less than those obtained by the current direct-printing techniques, by a newly developed nano-rheology printing (nRP) method. The device had an on/off current ratio, subthreshold voltage, hysteresis, and field-effect mobility of approximately 107, 1.7 V, 0 V, and 0.16 cm2 V s-1, respectively. The key to achieving the sub-micron channel printed TFT is the introduction of a new amorphous La–Ru–O material, which exhibits relatively good conductivity and excellent nRP properties at the nanoscale, for source/drain electrode patterns. Such a short-channel TFT would never be achieved with conventional printing methods, and hence, this approach is highly important for accessing next-generation low-cost, large-area and environmentally friendly printed electronics.
关键词： nano-rheology printing,thermal-imprinting,printed electronics,solution process,oxide thin-film transistor
更新于2025-09-23 15:23:52
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Development of novel correlative light and electron microscopy linkage system using silicon nitride film
摘要： In this study, we investigated the optical properties of a silicon nitride (SiN) film. The thin SiN film (30 nm thick) exhibited good light transmittance and little autofluorescence and could be used as a microscope slide for optical microscopy (OM). In addition, we developed a novel correlative light and electron microscopy (CLEM) that combines OM with transmission electron microscopy (TEM) using an SiN thin film. In this system, CLEM was performed by replacing a detachable retainer with a holder for TEM and an adaptor for OM. The advantage of this method is that the same specimens can be sequentially observed using suitable OM and TEM.
关键词： TEM holder,correlative microscopy,SiN film,exchangeable retainer,OM–TEM integration
更新于2025-09-23 15:23:52
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Flash sintering of barium titanate
摘要： A novel technique of low temperature and fast sintering is expected to meet the productive requirements of reducing energy consumption and improving efficiency. In this work, a dense Nb-doped BaTiO3 ceramic is obtained by a sintering method applying a direct current electrical field of 140 V cm-1 for 30 s at 1055 °C. In particular, the rapid densification mechanism of flash sintering Nb-doped BaTiO3 ceramic is explained by a model about liquid film which is formed by wetting at particle contacts, due to the Joule heating runaway. It is believed that the capillary forces generated from liquid film play a dominant role during flash sintering, which ensure the compaction of local particles and achieve the densified specimen in a relatively short time.
关键词： Liquid film,Rapid densification,Joule heating runaway,Flash sintering
更新于2025-09-23 15:23:52
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Photocatalytic oxidation of thiophene over cerium doped TiO2 thin film
摘要： Samples of TiO2 and TiO2 doped with 2% and 8% cerium ions were prepared by a sol-gel method and used as photocatalysts for the oxidation of vaporized thiophene. X-ray diffraction patterns showed a mixed phase of anatase and rutile for TiO2, while 2%Ce/TiO2 and 8%Ce/TiO2 were dominated by the anatase phase. As seen in the transmission electron microscopy image, the particle size of Ce/TiO2 was about 10 nm which was smaller than the undoped TiO2. The extended x-rays absorption fine structures revealed the substitutional effect of cerium in the TiO2 structure. Cerium-doped TiO2 exhibited a smaller photocurrent compared to that of TiO2, which suggested the electrons were trapped by cerium ions. In situ diffuse reflectance infrared spectroscopy under UV irradiation and x-ray photoemission spectroscopy were used to investigate the photocatalytic oxidation of thiophene on the prepared catalysts. Doping of cerium ions in TiO2 resulted in an enhanced adsorption of thiophene on the catalyst surface. The oxidation products of carboxylic acid with small amounts of sulfate ions were observed. As seen from the infrared absorption spectrum, 2%Ce/TiO2 and 8%Ce/TiO2 exhibited higher photocatalytic activity than those of the undoped TiO2.
关键词： Thiophene oxidation,Thin film,Cerium,Photocatalysis,Titanium dioxide
更新于2025-09-23 15:23:52
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Structural and Optical Properties of AlN/GaN and AlN/AlGaN/GaN thin films on Silicon Substrate prepared by Plasma Assisted Molecular Beam Epitaxy (MBE)
摘要： In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam epitaxy (MBE) on silicon substrate. Gallium (7N) and Aluminium (6N5) of high purity were used to grow GaN, AlN and AlGaN respectively. The structural and optical properties of the prepared AlN/GaN and AlN/AlGaN/GaN layer heterostructures were investigated by means of atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence spectroscopy (PL) and Raman spectroscopy. AFM measurement demonstrated that the root mean square of surface roughness for AlN/GaN and AlN/AlGaN/GaN heterostructures are 3.677 nm and 10.333 nm respectively. XRD data indicated that the samples have typical diffraction pattern of hexagonal structure. Raman spectra revealed all four Raman-active modes present inside both samples. PL spectra data showed the yellow luminescence which corresponds to the deep energy levels due to imperfections of AlN did not appear. Thus, PL observation indicated that the thin film of AlN/GaN and AlN/AlGaN/GaN layers have good optical quality and looks promising for various target applications in optoelectronics, photovoltaic and radiofrequency applications.
关键词： silicon,thin film,MBE,Aluminium Nitride,Gallium Nitride,Aluminium Gallium Nitride
更新于2025-09-23 15:23:52
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Pengolahan Film Radiografi Secara Otomatis Menggunakan Automatic X-Ray Film Processor Model Jp-33
摘要： A research on the process of forming an image on a radiographic film and processing techniques automatically has been done. The study was conducted using an X-ray plane Toshiba E 7239, Fil AGFA Healtcare HV Septestraat 27B2640 Mortsel and an automatic film processing "Automatic X-Ray Film Processor Model JP-33". The experimental results showed that the principle of automatic film processing is the same as the principle of film processing manually, except in automatic film processing there is no rinsing stage. Automatic film processing can save time and costs; also it can reduce the possibility of errors due to human factors.
关键词： X-ray,automatic processing,radiographic film,radiographic film processing
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology
摘要： We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by common-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm ╳0.9 mm.
关键词： thin-film microstrip (TFM),Indium phosphide (InP),H-band,Amplifier,Heterojunction bipolar transistors (HBTs),Terahertz monolithic integrated circuit (TMIC)
更新于2025-09-23 15:22:29
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Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
摘要： Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to ~40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input–output characteristics. The performances of ROs indicate small stage delay of ~1 μs, extremely high uniformity and high yield which are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.
关键词： CMOS,oxide semiconductor,thin-film transistor (TFT),IC
更新于2025-09-23 15:22:29
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CuI Film Produced by Chemical Extraction Method in Different Media
摘要： CuI crystalline thin films were produced on substrates (commercial glass) using chemical extraction method in different chemical bath media. In this study, their structural, optical and electrical properties were analyzed. Transmittance, absorption, optical band gap and refractive index of the films were examined by UV/VIS spectrum. XRD data showed that the film has a hexagonal structure for CuI. Surface and elemental (in terms of ratio) analysis of the films were performed via SEM and EDX analysis. The highest average grain size of CuI was observed for the film produced in aqueous media whereas the lowest average grain size was seen in chloroform bath. The curve formed by the number of crystallites per unit area (N) is different than the curves of dislocation density and average grain size. Number of crystallites per unit area has reached its maximum value in CCl4 bath, but it has been decreased in chloroform bath. In addition, film thickness has varied between 1232 nm and 3624 nm according to the solvent of bath.
关键词： CuI films,Thin film,Chrystal growth,Optical properties
更新于2025-09-23 15:22:29
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Volatile Memory Characteristics of a Solution-Processed Tin Oxide Semiconductor
摘要： In this paper, we demonstrate and study volatile memory characteristics of the sol-gel SnOx semiconductor. The SnOx exhibits a significant self-rectifying behavior and high nonlinearity. Low reverse-biased currents and high forward-biased currents are observed in the positive and negative voltage regions, respectively. The rectifying ratio can reach 3.7 × 10^5, and the selection ratio (I@Vread/I@0.5Vread) is 10^2. A pinched current hysteresis is found in the forward-biased region, which indicates the volatile memory characteristics of the SnOx memory. The resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) is ~10^5. In addition, the stability test reveals that the memory can repeatedly operate for over 1.5 × 10^3 cycles.
关键词： Hysteresis,Solution process,Oxide semiconductor,Thin film,Electrical characteristics
更新于2025-09-23 15:22:29