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Determination of the Thin-Film Structure of Zwitterion-Doped Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate): A Neutron Reflectivity Study
摘要： Doping poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is known to improve its conductivity, however little is known about the thin film structure of PEDOT:PSS when doped with an asymmetrically charged dopant. In this study, PEDOT:PSS was doped with different concentrations of the zwitterion 3-(N,N Dimethylmyristylammonio)propanesulfonate (DYMAP), and its effect on the bulk structure of the films characterized by neutron reflectivity. The results show that at low doping concentration, the film separates into a quasi bi-layer structure with lower roughness (10%), increased thickness (18%), and lower electrical conductivity compared to the un-doped sample. However when the doping concentration increases the film forms into a homogeneous layer and experiences an enhanced conductivity by more than an order of magnitude, a 20% smoother surface, and a 60% thickness increase relative to the pristine sample. Atomic force microscopy and profilometry measurements confirmed these findings, and AFM height and phase images showed the gradually increasing presence of DYMAP on the film surface as a function of the concentration. Neutron reflectivity also showed that the quasi bi-layer structure of the lowest concentration doped PEDOT:PSS is separated by a graded rather than a well defined interface. Our findings provide an understanding of the layer structure modification for doped PEDOT:PSS films that should be prove important for device applications.
关键词： neutron reflectivity,hole transporting layer,conductivity,film structure,zwitterion,PEDOT:PSS
更新于2025-11-14 15:19:41
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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric
摘要： In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
关键词： metal-oxide semiconductors,thin-film transistors,high-k dielectric,high mobility,inkjet printing
更新于2025-11-14 15:19:41
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Density functional theory for investigation of optical and spectroscopic properties of zinc-quinonoid complexes as semiconductor materials
摘要： Three Zn(II) complexes of a new organic compound [(E)-4-methyl-N1-((E)-4-methyl-6-(p-tolylimino) cyclohex-3-en-1-ylidene)-N2-(p-tolyl) benzene-1, 2-diamine] (HMBD) were prepared and characterized by various techniques, including Fourier transform infrared (FTIR), UV–visible measurements, 1H-NMR, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The data revealed that the HMBD ligand has an ONS tridentate-forming structure, while the complex of HMBD with zinc metal has a distorted octahedral structure, providing sp3d2 hybridization type. The geometry, HOMO, LUMO, polarizability, and other energetic parameters were evaluated by density functional theory (DFT) on Materials Studio package. Optical band gap (Eg) was estimated by DFT theory and optical properties for [Zn(MBD)(Cl)(H2O)2].2H2O (1), [Zn(MBD)](NO3)2H2O].2H2O (2), and [Zn(MBD)(CH3COO)(H2O)].3H2O (3) thin films as well, revealing that [Zn(MBD)(CH3COO)(H2O)].3H2O (3) thin film has the smallest energy gap and can be considered a highly efficient photovoltaic material. The resulting band gap energy values from both methods were found to be close to each other. Thin films of the ligand and zinc complexes were successfully fabricated by spin coating method. The optical constants, refractive index (n), and the absorption index (k) over the spectral range of the thin films were determined.
关键词： Optical properties,Semiconductor materials,Density functional theory,Thin film,Zinc-quinonoid complexes
更新于2025-11-14 15:19:41
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Structural, morphological and opticalproperties of spray-formed silver-doped zinc sulphide thin films
摘要： The study focused on the qualities of spray-formed Silver-doped Zinc sulphide (ZnS) thin films sprayed on soda-lime glass (slg) substrate. Silver-doped and undoped ZnS thin films with 0%, 1%, 3% and 5% Silver concentrations were deposited. The qualities of the synthesized films were investigated using x-ray diffractometry, scanning electron microscopy, Fourier transforms infrared (FTIR) spectrometry, UV-VIS spectrophotometry, Raman spectrometry and contact angle techniques. The x-ray diffraction data identified cubic structures for the thin films. Scanning electron microscopy shows the presence of agglomerates of nanoparticles and pores in the thin films. The thin films’ crystallite size ranges between 3.107 and 4.103 nm. FTIR revealed the chemical bonds in the film. The transmittance of the thin films is between 42.35 and 81.86% at 550 nm, the energy gap is observed within a range of 3.11 and 3.60 eV while the indices of refraction are in the range of 1.52 to 3.81 at 550 nm wavelength. Photoluminescence result shows Sulphur vacancies. A hydrophilic surface feature of the film was revealed by the contact angle measurement.
关键词： silver,Thin film,zinc sulphide,Raman spectrometry
更新于2025-11-14 15:16:37
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Ultraviolet to blue blocking and wavelength convertible films using carbon dots for interrupting eye damage caused by general lighting
摘要： Our eyes are regularly exposed to ultraviolet (UV) and blue light emitting diode (LED) light-based devices. However, the blue light induces macular degeneration, optic nerve crush, eye strain, and increases reactive oxygen species, which negatively influence eye-related cells (photoreceptor and retinal pigmented epithelial cells). UV light is also harmful to humans. It induces photokeratitis, cataract, and ocular surface squamous neoplasia. Here, we present carbon dot films with different carbon dot contents, prepared by a simple method. The films exhibit strong UV and blue light absorption. The transmittance of carbon dot films is >70% in the visible region (>500 nm). The UV light blocking ratio of commercial blue blocking filter and carbon dot film using UV LED chips is 94.1% and 95.9% (40 wt%), respectively. The blue light blocking ratio of commercial blue blocking filter and carbon dot film using blue LED chips is 10.2% and 82.3% (40 wt%), respectively. These results indicate that the prepared carbon dot films have a UV blocking rate similar to that of commercial blue blocking filters and a much better blue blocking rate than commercial blue blocking filters. Therefore, they can be effectively used as UV and blue blocking films in various applications.
关键词： White LED,Eye damage,UV blocking film,Carbon dot,blue blocking film
更新于2025-11-14 15:15:56
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Improvement of Sensing Performance of Impedancemetric C2H2 Sensor Using SmFeO3 Thin-Films Prepared by a Polymer Precursor Method
摘要： A sensitive an impedancemetric acetylene (C2H2) gas sensor device could be fabricated by using perovskite-type SmFeO3 thin-film as a sensor material. The uniform SmFeO3 thin-films were prepared by spin-coating and focusing on the effects of polymer precursor solutions. The prepared precursors and thin-films were characterized by means of thermal analysis, Fourier-transform infrared spectroscopy, ultraviolet–visible spectroscopy, X-ray diffraction analysis, scanning electron microscopy and X-ray photoelectron spectroscopy. It was found that particle growth and increase in homogeneity of the prepared thin-film could be accelerated by the addition of acetyl acetone (AcAc) as a coordination agent in the polymer precursor solution. Moreover, the highly crystallized thin-film-based sensor showed good response properties and stabilities to a low C2H2 concentration between 0.5 and 2.0 ppm.
关键词： polymer precursor,acetyl acetone,thin-film,gas sensor,acetylene,perovskite-type oxide,AC impedance
更新于2025-11-14 15:15:56
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Obtainment of Stabilized Zirconium Dioxide via the High-Frequency Magnetron Sputtering of a Metallic Target
摘要： The influence of the yttrium concentration on the structure of coatings prepared via the high-frequency magnetron sputtering of a metal target is investigated. The results of coating deposition in pure argon and a mixed (Ar + O2), reactive medium are discussed. It is demonstrated that a nonequilibrium body-centered-cubic solid solution based on zirconium with an extended homogeneous region (up to 16 at % Y) is formed under the condition that a target is sputtered in pure argon. During reactive-coating deposition, the formation of cubic or tetragonal zirconium dioxide is generated depending on the yttrium concentration. The tetragonal structure is created if the yttrium concentration is 8 at %. It is found that the obtained tetragonal zirconium dioxide is thermally stable both in terms of structure and in morphology upon heat treatment in air at 1100°C for 11 h.
关键词： zirconium dioxide,magnetron sputtering,nanostructured film,composite,coating
更新于2025-11-14 15:13:28
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Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors
摘要： The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.
关键词： thin-film transistor,annealing,plasma treatment,ink-jet printing
更新于2025-10-24 16:37:46
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Complexing agent triethanolamine mediated synthesis of nanocrystalline CuO thin films at room temperature via SILAR technique
摘要： In the present work, nanostructured cupric oxide (CuO) thin films have been successfully deposited on glass substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature. The influence of complexing agent as triethanolamine (TEA) on the structural, morphological, optical and electrical characteristics of nanocrystalline CuO thin films have been examined in detail. Structural studies confirm that all the films were polycrystalline nature having a monoclinic crystalline form and displayed (111) and (111) preferential orientations. The estimated crystallite values ranged from 17.47 to 19.95 nm. The surface morphology of CuO thin films was examined through scanning electron microscopy and materials microscope studies. Surface studies revealed that homogeneously distributed CuO nanostructures on the film surfaces. The optical studies showed that band gap energy values of the CuO thin films were increased from 1.33 to 2.00 eV as a function of increasing TEA concentration. Meanwhile, the average transmittance of all the films had increased from 2.5 to 42.5% with the increasing TEA concentration. FTIR studies identified the formation of single phase CuO and chemical bonding of the complexing agent. The resistivity value of CuO thin film synthesized without TEA was 3.74 × 10^5 Ω.cm and the resistivity consequently increased to 509 × 10^5 Ω.cm with TEA concentration of 1.0 M%. A high figure of merit (786×10^{-12} Ω^{-1}) was obtained for complexing agent concentration of 0.25 M%.
关键词： SILAR,Surfactant,TEA,CuO thin film
更新于2025-10-24 16:32:58
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Laser damage characteristics of indium-tin-oxide film and polyimide film
摘要： This report focuses on the damage characteristics of the indium-tin-oxide (ITO) layer and the polyimide (PI) layer, which are two constituent components of a LCD. This investigation is different from the previous study, in which the alignment layer was deposited directly on a glass substrate. The PI alignment layer is pinned on the ITO film to imitate the structure of the LCD as much as possible in our current study. The damage process of the ITO/Glass sample involves melting, vaporization near the laser-induced damage threshold (LIDT), and removal at a higher fluence. However, the damage process of the PI/ITO/Glass sample involves thermally induced plastic deformation, followed by cooling when the irradiation fluence is near the LIDT, and rupture when the irradiation fluence is higher. The LIDTs of the PI/ITO/Glass samples, as determined by the on-line CCD detection technique, are higher than those of the ITO/Glass samples. The favorable mechanical properties of the PI are primarily responsible for this result.
关键词： PI film,ITO film,near-infrared laser damage
更新于2025-10-22 19:40:53