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oe1(光电查) - 科学论文

2 条数据
?? 中文（中国） ▾

  • Morphological regulation of all-inorganic perovskites for multilevel resistive switching

    摘要： Enormous attention has been paid to all-inorganic cesium lead halide perovskites in various photoelectronic fields for their remarkable performances. However, comparing to their analogue organic-inorganic hybrid perovskites, the film morphology of such all-inorganic lead halide perovskites is difficult to control due to the low solubility of cesium salt. Here, we propose a new fabrication routine to control the film morphology of CsPbBr3. A series of CsPbBr3 thin films with big grains (≈800 nm) were successfully prepared. The memristors based on such CsPbBr3 thin films take on typical bipolar resistive switching behavior and remarkable characteristics such as high Ron/Roff ratio (≈105), very low working voltage (≈ ± 1 V), and long data retention (≥104 s). Furthermore, through modulating the film morphology, memristors with multilevel resistive switching behavior can be easily prepared. These advantages demonstrate that the all-inorganic cesium lead halide memristors possess great potential for future application.

    关键词： Memristor,Morphological regulation,Multilevel resistive switching,All-inorganic perovskite

    更新于2025-09-23 15:23:52

  • Multilevel resistance switching behavior in PbTiO3/Nb:SrTiO3(100) heterostructure films grown by hydrothermal epitaxy

    摘要： Epitaxial PbTiO3 films with a smooth and dense surface were fabricated by a promising hydrothermal synthesis on an Nb:SrTiO3(100) substrate. The resulting coated substrate was used to fabricate a Pt/PbTiO3/Nb:SrTiO3 heterostructure device. The device exhibited a multilevel storage capacity with an appropriate ROFF/RON ratio and excellent endurance and retention. An electric conduction analysis indicated that the resistive switching behavior of the device was attributed to the trap controlled space-charge-limited current conduction that was caused by the oxygen vacancies in the PbTiO3 hydrothermal films. The modulation of the Pt/PbTiO3 Schottky-like junction depletion under an applied electric field is thought to be responsible for the resistive switching behavior of the device in the carrier injection-trapped/detrapped process.

    关键词： Hydrothermal epitaxy,Multilevel resistive switching behavior,PbTiO3 films

    更新于2025-09-09 09:28:46