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Efficiency and spectral performance of narrowband organic and perovskite photodetectors: a cross-sectional review
摘要： The capability of detecting visible and near infrared light within a narrow wavelength range is in high demand for numerous emerging application areas, including wearable electronics, the Internet of Things, computer vision, artificial vision and biosensing. Organic and perovskite semiconductors possess a set of properties that make them particularly suitable for narrowband photodetection. This has led to rising interest in their use towards such functionality, and has driven remarkable progress in recent years. Through a comparative analysis across an extensive body of literature, this review provides an up-to-date assessment of this rapidly growing research area. The transversal approach adopted here focuses on the identification of: (a) the unifying aspects underlying organic and perovskite narrowband photodetection in the visible and in the near infrared range; and (b) the trends relevant to photoconversion efficiency and spectral width in relation to material, device and processing strategies. A cross-sectional view of organic and perovskite narrowband photodetection is thus delineated, giving fresh insight into the status and prospects of this research area.
关键词： narrowband organic photodetectors,narrowband perovskite photodetectors,NIR photodetectors,colour sensors,spectral selectivity
更新于2025-09-23 15:19:57
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Ultra-fast and high flexibility near-infrared photodetectors based on Bi2Se3 nanobelts grown via catalyst-free van der Waals epitaxy
摘要： van der Waals epitaxy (vdWe) method has recently attracted considerable interest due to its extensive application in the growth of layered structure materials. However, the growth process of vdWe is not completely understood. Here, we report the controlled growth process of Bi2Se3 nanobelts and study their photoresponse behaviour. The average length of nanobelts increases from 7 mm to 17 mm by adjusting the temperature of Bi2Se3 powder from 520 (cid:1)C to 530 (cid:1)C, however the average length becomes saturated with further increasing the source material temperature over 530 (cid:1)C. Such a change can be attributed to the competition between the process of Bi2Se3 molecule diffusion and the process of crystal formation-related chemical reaction, leading to a symmetrically studying for the growth process of catalyst-free vdWe growth of Bi2Se3 nanobelts. The photodetectors based on these Bi2Se3 nanobelts show excellent device performance in the near-infrared light range, including an ultra-fast photoresponse (trsing z 37 ms, tdecay z 62 ms), a high responsivity of 10.1 mA/W and a high detectivity of 4.63 (cid:3) 108 Jones. This high device performance could be related to the excellent carrier transport properties as Bi2Se3 nanobelt photodetectors also demonstrate a great potential for fabricating ?exible and wearable electronics by still showing stable photoresponse after bending the device for 200 times.
关键词： 2D NIR photodetectors,Catalyst-free van der Waals epitaxy,Bi2Se3 nanobelts
更新于2025-09-12 10:27:22