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Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire
摘要： A coherent photon source emitting at near-infrared (NIR) wavelengths is at the heart of a wide variety of applications ranging from telecommunications, optical gas sensing to biological imaging, and metrology. NIR-emitting semiconductor nanowires (NWs), acting both as a miniaturized optical resonator and as a photonic gain medium, are among the best-suited nanomaterials to achieve such goals. In this study, we demonstrate the NIR lasing at 1 μm from GaAs/GaNAs/GaAs core/shell/cap dilute nitride nanowires with only 2.5 % of nitrogen. The achieved lasing is characterized by an 'S'-shape pump-power dependence and narrowing of the emission line-width. Through examining the lasing performance from a set of different single NWs, a threshold gain, g_th, of 4100 – 4800 cm^{-1}, was derived, with a spontaneous emission coupling factor, β, up to 0.8, which demonstrate the great potential of such nanophotonic material. The lasing mode was found to arise from the fundamental HE11a mode of the Fabry-Perot cavity from a single NW, exhibiting optical polarization along the NW axis. Based on temperature dependence of the lasing emission, a high characteristic temperature, T_0, of 160(±10) K is estimated. Our results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
关键词： dilute nitride,GaAs/GaNAs/GaAs,core/shell/cap structure,Nanowire lasers
更新于2025-09-23 15:23:52
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Optical study of p-doping in GaAs nanowires for low-threshold and high-yield lasing
摘要： Semiconductor nanowires suffer from significant non-radiative surface recombination, however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and hence quantum efficiency of emission, allowing demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps?1 by modelling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ?3 × 1018 cm?3 and lengths ? 4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ～ 10 μJ cm?2 , and using a data-led filtering step, we present a method to simply identify sub-sets of nanowires with over 90% lasing yield.
关键词： Doping,PL,III-V Nanowire lasers
更新于2025-09-09 09:28:46