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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Interface Trap Effects in the Design of a 4H-SiC MOSFET for Low Voltage Applications
摘要： The current-voltage characteristics of a 4H-SiC MOSFET dimensioned for a breakdown voltage of 650 V are investigated by means of a numerical simulation study that takes into account the defect state distribution at the oxide-semiconductor interface in the channel region. The modelling analysis reveals that, for these low-voltage devices, the channel resistance component plays a key role in determining the MOSFET specific ON-state resistance (RON) under different voltage biases and temperatures. The RON value is in the order of a few mΩ×cm2.
关键词： numerical simulations,power devices,ON-state resistance,4H-SiC,defects states
更新于2025-09-23 15:23:52
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Electro-optical dual modulation on resistive switching behavior in BaTiO <sub/>3</sub> /BiFeO <sub/>3</sub> /TiO <sub/>2</sub> heterojunction
摘要： The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide (FTO) substrate by the sol–gel method. The results indicate that the Pt/BaTiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current (SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarization-modulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state (RS), which is formed by the double ferroelectric layer BaTiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory (RRAM) devices based on ferroelectric materials.
关键词： multi-state resistance,resistive switching characteristic,electro-optical dual modulation,ferroelectric multilayer heterojunction
更新于2025-09-11 14:15:04
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[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Dynamic drift effects in GaN power transistors: Correlation to device technology and mission profile
摘要： GaN devices for high voltage power switching are facilitating smaller, more light-weighted and more efficient converter systems. In order to provide an optimum design of such systems it is necessary to understand dynamic GaN device performance in dependence on targeted mission profile and technological parameters. The paper shortly introduces to GaN device technology and provides a widely accepted physical interpretation of mechanisms that may adversely influence device switching properties. Then important scenarios of GaN power transistor switching are presented and correlated to biasing conditions relevant for in-system device operation. In detail, dynamic switching properties depending on off- and on-state time and voltage, substrate biasing conditions and temperature are analysed and correlated to different device technologies and manufacturers. The abovementioned parameters are influencing dynamic device properties in quite a complex manner and can often be considered as a characteristic finger print of a specific technological implementation or a specific device or epitaxial manufacturer.
关键词： power switching,dynamic on-state resistance,drift effects,gallium nitride
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Novel monolithically integrated bidirectional GaN HEMT
摘要： Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows for substantially reduced conduction losses in applications such as the multilevel T-type inverter which benefit from power semiconductors with bidirectional voltage blocking capability. In static and dynamic characterizations, the monolithically integrated bidirectional GaN HEMT exhibits similar switching and on-state behavior like conventional unidirectional GaN HEMTs.
关键词： bidirectional,T-type inverter,power semiconductor device,multilevel inverter,switching characteristics,Gallium Nitride,dynamic on-state resistance,HEMTs,integration,semiconductor
更新于2025-09-04 15:30:14
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A new method of accurately measuring photoconductive performance of 4H-SiC photoconductive switches
摘要： A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS were precisely measured, where a maximum on-state photoconductivity of 6.26 (Ω · m)?1, a minimum on-state resistivity of 0.16 Ω · m and an accurate minimum resistance of 1.71 Ω were obtained for SiC substrate. The quantitative relationship between the on-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.
关键词： pulse-power system switches,silicon carbide,Photoconductive switch,on-state resistance,intrinsic photoconductivity
更新于2025-09-04 15:30:14