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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Time Domain Traveling Wave Model of a Hybrid Laser for Silicon Photonics Applications
摘要： Integration of lasers sources in Silicon Photonics (SiPh), realised trough different techniques, became very appealing for applications in the ever growing field of intra/inter chip data data interconnects and optical communications. We implemented a Time Domain Traveling Wave (TDTW) model based on a set of Partial Differential Equations (PDE) for the slowly varying envelope of the electric field, the medium polarization and the charge carriers density in order to describe the dynamics of a new generation of hybrid laser based on III-V Reflective Semiconductor Optical Amplifier (RSOA) and SiPh external mirror with narrow effective reflectivity bandwidth (< 10GHz) similar to that considered in [2, 3]. The effect of the SiPh mirror can be taken into account by cascading the transmission matrices associated with all its passive sections (namely spot-size-conveter, phase control sections, ring resonators etc...) and including the result in frequency dependent boundary conditions for the PDE problem. Differently from standard rate equation models for semiconductor lasers, our approch correctly reproduce the RSOA gain/refractive index dependence from frequency and carriers density that represent peculiar features of radiation-matter interaction in semiconductor media and play a fundamental role in determining the hybrid laser dynamical behaviour. After computing the TW (Traveling wave) solutions for typical narrow reflectivity bandwidth designs, we numerically showed how for realistic values of the linewidth enhancement factor α (namely α > 2) stable single frequency lasing emission not always occurs at the reflectivity peak (TW0 solution in Fig. 1), but on the red part of the SiPh mirror reflectivity resonance curve around the point of maximum reflectivity slope (TW1 solution in Fig. 1a and Fig. 1b). The fact that this point also coincides with that of minimum optical linewidth, where negative feedback regime reduces instantaneous frequencies fluctuations, and the additional numerical evidence that the interval of TW stability decreases with increasing output power indicate that phase-amplitude coupling mediated by the α-factor may be at the origin of the observed TW instability. It also follows that by a suitable tuning of a phase section in SiPh circuit it is possible to stabilize hybrid laser emission by placing a TW solution on the point of maximum reflectivity slope.
关键词： hybrid laser,Partial Differential Equations,linewidth enhancement factor,Silicon Photonics,Time Domain Traveling Wave model,Reflective Semiconductor Optical Amplifier
更新于2025-09-12 10:27:22
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Modeling of the Ultra-Stable Operating Regime in Fourier Domain Mode Locked (FDML) Lasers
摘要： Fourier domain mode locked (FDML) ?ber lasers are broadband wavelength-swept ring systems with record sweep speeds. Lasing is achieved by synchronizing the roundtrip time of the optical ?eld in the ?ber delay cavity with the sweep period of a tunable Fabry-P′erot (FP) bandpass ?lter. Since their invention in 2006, FDML lasers have dramatically enhanced the capabilities of optical coherence tomography (OCT) and various sensing applications. However, the physical coherence limits, such as the maximum achievable coherence length, are yet unknown. An important breakthrough in reaching this limit is a recently experimentally demonstrated highly coherent operation mode over a bandwidth of more than 100 nm [1], referred to as the sweet spot. The sweet spot operation mode is characterized by nearly shot-noise limited ?uctuations in the intensity trace of the laser with signi?cantly enhanced coherence properties, whereas in conventional FDML laser systems the intensity trace is distorted by high frequency noise which negatively affects the coherence length. This ultra-low noise operating regime was generated by an almost perfect compensation of the ?ber dispersion with a manually ?ne tuned chirped ?ber Bragg grating and a highly synchronized sweep rate of the FP ?lter with an accuracy in the range of mHz. Polarization effects were controlled with a polarization maintaining semiconductor optical ampli?er (SOA) gain medium and a polarization controller.
关键词： Fourier domain mode locked (FDML) lasers,sweet spot operation mode,coherence length,semiconductor optical amplifier (SOA),polarization controller,optical coherence tomography (OCT)
更新于2025-09-11 14:15:04
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Scintillation Suppression by Gain Saturated SOA with Differential Signal Transmission in Free Space Optical Communication
摘要： This paper proposes scintillation reduction by gain saturated SOA with differential signal transmission in FSO. Experimental results show that scintillation and extinction ratio degradation from gain saturated SOA are compensated effectively by the proposed technique.
关键词： atmospheric turbulence,extinction ratio,free space optical,differential signal,fixed threshold decision,Semiconductor optical amplifier
更新于2025-09-11 14:15:04
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Fluorescence features of Tm3+-doped multicomponent borosilicate and borotellurite glasses for blue laser and S-band optical amplifier applications
摘要： Novel B2O3–SiO2–Al2O3–ZnO–Li2O/MgO and B2O3–TeO2–PbO–ZnO–Li2O–Na2O glasses with different concentrations of Tm2O3 were synthesized by using the melt-quench method. All the fabricated samples have been characterized by visible emission spectra and decay times, including near-infrared (NIR) luminescence measurements. For 0.5 mol% Tm3+-doped borotellurite glass, several radiative parameters are evaluated using the Judd-Ofelt parameters. The intensity of all the visible emission bands increased with the increase of Tm2O3 concentration up to 0.5 mol%, and beyond this doping content, luminescence concentration quenching takes place. The luminescence intensity quenching is attributed to energy transfer (ET) processes through cross-relaxation (CR) channels. The visible luminescence decay curves were well fit with a single exponential (for Tm3+: 1D2 level) and double exponential (for Tm3+: 1G4 level) functions for the multicomponent borosilicate samples, while Inokuti-Hirayama model was used for the multicomponent borotellurite glass 1D2 level decay time fit. The derived decay lifetimes of the 1D2 level are found to be much shorter than that of the 1G4 level. In Li2O (alkali) or MgO (alkaline) containing borosilicate samples, pumped under 808 nm laser diode, the 3H4→3F4 (1.458 μm) emission intensity increased from 0.1 to 2.0 mol% Tm3+ ion concentration, indicating negligible CR processes. The computed Full-Width at Half-Maximum (FWHM) values for the 1458 nm emission in 2.0 mol% Tm3+-doped Li and Mg series borosilicate samples are 117 and 125 nm, respectively, while the FWHM value for 0.5 mol% Tm2O3 content doped borotellurite glass is 118 nm. Following the analyzed visible and NIR optical results, the fabricated Tm3+ glasses could be useful for blue laser and S-band optical amplifier applications.
关键词： Multicomponent borosilicate glass,Tm3+: 1458 nm fluorescence,Multicomponent borotellurite glass,S-band optical amplifier,453 nm blue laser
更新于2025-09-11 14:15:04
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[IEEE 2018 International Conference on Smart City and Emerging Technology (ICSCET) - Mumbai, India (2018.1.5-2018.1.5)] 2018 International Conference on Smart City and Emerging Technology (ICSCET) - I. Simulation of bi-directional WDM-TDM PON with 5 Gb/s downstream and 2.5 Gb/s Upstream re-modulated Data based on RSOA
摘要： Paper present a simulation of bi-directional WDM-TDM PON with upstream re-modulation based on RSOA for 64 ONUs at 60 Km reach with 5 Gb/s downstream and 2.5 Gb/s upstream bit rate. A 1:16 splitter is used as a PON element which creates communication between central office and different users. The effectiveness of this design depends on the ability of the RSOA to re-modulate the received downstream signal with the new upstream signal. This architecture is investigated for different RSOA power, downstream receiver power and extinction ratio in terms of BER. The result shows that as the RSOA input power decreases and the device operating regime becomes increasingly linear, the BER performance of the upstream signal deteriorates and that of downstream signal improves. Also it is observed that greater the extinction ratio the harder is for the RSOA to overwrite the downstream signal
关键词： (RSOA),division multiplexing (TDM),(PON),Reflective,Wavelength division multiplexing(WDM),optical network,time-,unit(ONU),semiconductor optical amplifier,Passive optical network
更新于2025-09-10 09:29:36
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Artificial neuron based on nonlinear polarization rotation in a semiconductor optical amplifier
摘要： We experimentally demonstrated an optoelectronic artificial neuron model, which can perform sigmoid transfer function. The proposed optoelectronic circuit can mimic the behavior of continuous sigmoidal neuron based on the nonlinear polarization rotation (NPR) in a single semiconductor optical amplifier (SOA). Because the current-induced NPR is anti-parallel to the optical power-induced NPR, excitatory and inhibitory stimuli to the proposed artificial neuron can be implemented by optical injection and electrical modulation, respectively. The response of the proposed neuron to excitatory inputs and inhibitory inputs are related to the initial state of polarization (SOP), bias current and power of probe beam. By adjusting the initial SOP, the neuron can be more likely to be excited or inhibited.
关键词： Semiconductor optical amplifier,Optical processing devices,Optical neural systems
更新于2025-09-10 09:29:36
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[IEEE 2018 15th European Radar Conference (EuRAD) - Madrid, Spain (2018.9.26-2018.9.28)] 2018 15th European Radar Conference (EuRAD) - A DC to 40 GHz, High Linearity Monolithic GaAs Distributed Amplifier with Low DC Power Consumption as a High Bit-Rate Pre-Driver
摘要： This paper presents the design and the performance of a six stage GaAs MMIC distributed amplifier (DA) for optical driver applications. The DA is fabricated in a commercially available 0.15 μm GaAs p-HEMT technology. The amplifier exhibits 13 dB of small gain over 40 GHz of 3 dB bandwidth with a power consumption equal to 550 mW. Group delay time variation up to 30 GHz is only ±7 ps. The output power is higher than 16 dBm (4 Vpp), which makes the circuit suitable as a preamplifier for lithium-niobate (LiNbO3) optical modulator driver. The DA is demonstrated as a part of the modulator driver in a 12.5 GBps PAM-4 (25Gbps) optical system by using the eye diagram as a figure of merit.
关键词： Optical Drives,LiNbO3 Optical modulator,electro-optical modulation,Wideband amplifier,Optical amplifier,modulator,Traveling-wave amplifier,pre-driver,MMIC,Distributed Amplifier
更新于2025-09-04 15:30:14
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Multi-Section Semiconductor Optical Amplifiers for Data Centre Networks
摘要： The ever-growing Internet based services and applications, involving a huge amount of computing and storage resources, have been powered by data centres (DC) [1]. The storage and movement of data within the DCs is driving the requirement for cost-effective, higher capacity inter- and intra- next generation DC networks [2]. Within the context of these next generation DC networks, the ability to transmit very high data rates (100 – 400 Gb/s) over both short and long distances (intra or inter DC fibre links) is one of the main challenges (within the optical sector. The modulation format that is currently touted as the most suitable for such high capacities is 4-level pulse amplitude modulation (PAM4), which carries 2 bits per symbol. Optical amplification is needed for reach extension for inter- and intra- DC communications, Semiconductor optical amplifiers (SOAs) are needed to realize a low cost amplification solution. SOAs possess many advantages, including low power consumption, small footprint, wide bandwidth, being integrateable, and the ability to accommodate wavelength ranges beyond the scope of Erbium doped fibre amplifiers. However, the use of SOAs for linear amplification of C-band optical signals is still relatively limited, mainly due to the relatively large noise figure (NF) associated with them compared to erbium doped fiber amplifiers and low saturation powers of about 10 mW. Multi-section SOAs are known to possess superior NFs and larger saturation powers than an equivalent single-section SOA [3], and hence may provide performance benefit for reach extension for DC networks. In this work, we examine the use of a multi-section semiconductor optical amplifier (MS-SOA) [3] to provide an improvement in its use as a linear amplifier compared to a single section SOA. The MS-SOAs have been shown to have superior noise and linearity performance compared with single section SOAs. We configure the MS-SOA to operate in the low-NF mode with high saturation power mode and the equivalent single-section SOA. We compare the input power dynamic range for the MS-SOA and equivalent single-section SOA. We expect an improvement in the input power dynamic range of at least 3 dB [4]. The combination of a lower NF and higher saturation power enables crosstalk-free amplification of simultaneous multi-wavelength channels using the same SOA device.
关键词： multi-section semiconductor optical amplifier,advanced modulation formats,data centre networks
更新于2025-09-04 15:30:14