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Effect of rare earth Pr doping on core characteristics of electrodeposited nanocrystalline Cu2O films: a film for optoelectronic technology
摘要： Undoped and Pr doped Cu2O nanocrystalline ?lms were fabricated by the electrodeposition method. These ?lms were studied to investigate the formation, morphology, optical, and photoresponse properties on Pr doping concentrations (i.e., 0, 1, 3, and 5 wt%). Structural studies of the deposited Cu2O:Pr ?lms exposed the cubic crystal structure with polycrystalline nature. The crystallite size is decreased from 54 to 29 nm by increasing the Pr doping concentrations. The Raman peaks at 110, 147, 215, 413, and 633 con?rm the Cu2O phase and well matched with the XRD results. The morphological study shows that the pyramid-shaped particles are homogeneously arranged on the ?lm surfaces. The absorption is high for the ?lm deposited with the 5% Pr doping is due to the maximum thickness than the other ?lms. The calculated band gap values of Cu2O:Pr ?lms were reduced from 2.06 to 1.90 eV with raising the Pr doping level. PL spectra showed high intense emission peak at 617 nm which con?rms the NBE emission of Cu2O lattice. Index of refraction (n) and coef?cient of extinction (k) values were increased on increasing the doping concentration from 0 to 5%. From photosensitivity analysis, there is an increase of photoresponse behavior with respect to illuminated current.
关键词： Electrodeposition,Structural,Optical and electrical properties,Morphological
更新于2025-11-21 11:18:25
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Effect of Nd doping on structural and opto-electronic properties of CdO thin films fabricated by a perfume atomizer spray method
摘要： A perfume atomizer-assisted spray pyrolysis method was employed to fabricate undoped and neodymium (Nd)-doped cadmium oxide (CdO) thin films. X-ray diffraction results reveal that all the films are polycrystalline with a cubic structure with a preferential orientation along the (200) direction. Scherrer’s formula was used to calculate the crystallite size of Nd-doped CdO films. Energy dispersive spectroscopy results show that Cd, Nd and O elements are present in Nd-doped CdO thin films. The optical absorption of the doped films is increased along with increasing Nd-doping level. The prepared CdO thin films have a high absorption coefficient in the visible region and the optical band gap is decreased on increasing Nd doping content. The electrical carrier concentration (n) of the deposited films is increased with increasing Nd doping concentration. Photoconductivity studies of a nanostructured Al/Nd–n-CdO/p-Si/Al device showed a non-linear electric characteristics indicating diode-like behaviour. Prepared Nd:CdO films could increase the photo-sensing effect of this n-CdO/p-Si heterostructure. These Nd-doped CdO thin films may open a new avenue for photodiode application in near future.
关键词： optical and electrical properties,Nd:CdO,thin films,spray using perfume atomizer
更新于2025-09-23 15:23:52
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Thin film Sn2S3 via chemical deposition and controlled heating - its prospects as a solar cell absorber
摘要： As a semiconductor of “earth-abundant” elements, Sn2S3 with a bandgap (Eg) close to 1 eV merits attention, but a method to prepare phase-pure thin film remains elusive. We report the formation of Sn2S3 thin film of 360 nm in thickness by heating chemically deposited tin sulfide thin films at 450 oC during 30 – 45 min in presence of sulfur at a pressure, 75 Torr of nitrogen. Energy dispersive x-ray emission spectra and grazing incidence x-ray diffraction established a reaction route for this conversion of SnS completely to Sn2S3 via an intermediate phase, SnS2. The optical bandgap of the material is 1.25 eV (indirect) and 1.75 eV (direct, forbidden). The optical absorption suggests a light-generated current density of 30 mA/cm2 for the Sn2S3 film (360 nm) as a solar cell absorber. Thin film Sn2S3 formed in 30 min heating has a p-type electrical conductivity in the dark of 1x10–4 Ω–1 cm–1, which increases to 3x10–4 Ω–1 cm–1 in 0.2 s under 800 W/m2 tungsten-halogen illumination. An estimate made for its mobility-lifetime product is, 6x10–6 cm2 V–1. We discuss the prospects of this material for solar cells.
关键词： SnS-CUB,Sn2S3,semiconductor thin film,chemical deposition,energy conversion,ottemannite,cubic tin sulfide,renewable energy,optical and electrical properties,solar cells
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - P-type SiOx front emitters for Si heterojunction solar cells
摘要： We have applied p-type nanocrystalline silicon-oxide (p-SiOx) as front emitter in silicon heterojunction solar cells. The evolution of structural, optical, and electrical properties of p-SiOx as a function of the carbon-dioxide/silane flow rate ratio used in the gas mixture has been investigated, comparing also the film characteristics with those of p-type amorphous and nanocrystalline silicon thin films often used in the cells. Selected p-SiOx films with suitable electrical properties have been inserted in silicon heterojunction solar cells based on n-type FZ c-Si <100> wafers, passivated with ultrathin intrinsic a-Si:H buffers. Improvement of all the photovoltaic parameters has been observed with the emitter with higher oxygen content. The results have been correlated with the increased transparency and enhanced field-effect passivation obtained thanks to the presence of sufficient carbon dioxide in the gas mixture for the p-SiOx layer growth.
关键词： field-effect passivation,silicon heterojunction solar cells,p-type nanocrystalline silicon-oxide,optical and electrical properties,carbon-dioxide/silane flow rate ratio
更新于2025-09-11 14:15:04
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Camphor Sulfonic Acid Doped Poly(3-hexylthiophene) Nanofilms: Optical and Electrical Properties
摘要： Herein, we report the fabrication and characterization of Camphor Sulfonic Acid (CSA) doped Poly(3-hexylthiophene) (P3HT) nano?lms prepared at different substrate temperature on glass by simple wire bar coating method. Spectroscopic, optic, structural and electrical properties of the prepared nano?lms were characterized by atomic force microscopy (AFM), UV-Visible spectroscopy, ?uorescence spectroscopy, X-ray diffraction, NKD spectroscopy, SEM and DC electrical measurements. The detailed electrical characterizations revealed that the conductivity of the P3HT nano?lms increased when the ?lms are doped with CSA and the conductivity increased from 5.89 × 10?5 S/cm to 1.39 × 10?4 S/cm for 40 °C preparation temperature. Thus, it was con?rmed that the substrate temperature plays an important role on the ?lm structure and spectroscopic properties. Additionally CSA-doping changes the optical properties, especially when the ?lms prepared at 40 °C.
关键词： P3HT,Nano?lms,Camphor Sulfonic Acid,Optical and Electrical Properties
更新于2025-09-04 15:30:14