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A Facile Method for Preparation of Cu2O-TiO2 NTA Heterojunction with Visible-Photocatalytic Activity
摘要： Based on highly ordered TiO2 nanotube arrays (NTAs), we successfully fabricated the Cu2O-TiO2 NTA heterojunction by a simple thermal decomposition process for the first time. The anodic TiO2 NTAs were functioned as both “nano-container” and “nano-reactors” to load and synthesize the narrow band Cu2O nanoparticles. The loaded Cu2O expanded absorption spectrum of the TiO2 NTAs from ultraviolent range to visible light range. We found that the Cu2O-TiO2 NTA heterojunction films had visible activity towards photocatalytic degrading methyl orange (MO). The photocatalytic abilities of the Cu2O-TiO2 NTA heterojunction films were found increased with the Cu2O content from 0.05 to 0.3 mol/L. This could be explained by more electron-hole pairs generated and less recombination, when the Cu2O-TiO2 heterojunction got formed. Here, we put forward this promising method, hoping it can facilitate the mass production and applications of Cu2O-TiO2 NTA heterojunction.
关键词： TiO2 nanotube,Visible photocatalysis,Thermal decomposition,Cu2O,Heterojunction
更新于2025-09-04 15:30:14
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Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM-based tool and Design of Experiments
摘要： This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state‐of‐the‐art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes. Extremely accurate thermal simulations are conducted in a relatively short time with a tool relying on a commercial 3‐D finite‐element method (FEM) solver and an in‐house routine for automated geometry construction, optimized mesh generation, sequential solution, and data storing/processing. Design of Experiments is used to define a thermal resistance model as a function of the aforementioned parameters on the basis of a few FEM data.
关键词： finite‐element method (FEM),gallium arsenide (GaAs),Design of Experiments (DOE),thermal simulation,thermal resistance,heterojunction bipolar transistor (HBT)
更新于2025-09-04 15:30:14
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Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
摘要： The properties of n-GaP/p-Si interface as well as their influence on solar cell performance are studied for GaP layers grown by low-temperature (380 °C) plasma-enhanced atomic layer deposition (PE-ALD). The influence of different plasma treatments and RF power values are explored. The increase of RF power leads to a growth transition from amorphous (a-GaP) to microcrystalline GaP (μc-GaP) with either amorphous-GaP/Si or epitaxial-GaP/Si interface, respectively. However, when continuous hydrogen plasma is used the amorphous-GaP/Si interface exhibits better photovoltaic performance compared to the epitaxial one. Values of open circuit voltage, Voc ? 0.45–0.55 V and internal quantum efficiencies, IQE > 0.9 are obtained for amorphous-GaP/Si interfaces compared to Voc ? 0.25–0.35 V and IQE < 0.45 for epitaxial-GaP/Si interfaces. According to admittance spectroscopy and TEM studies the near-surface (30–50 nm) area of the Si substrate is damaged during growth with high RF power of hydrogen plasma. A hole trap at the level of EV t (0.33 ± 0.02) eV is detected by admittance spectroscopy in this damaged Si area. The damage of Si is not observed by TEM when the deposition of the structures with epitaxial-GaP/Si interface is realized by a modified process without hydrogen plasma indicating that the damage of the near-surface area of Si is related to hydrogen plasma interaction.
关键词： admittance spectroscopy,solar cells,PE-ALD,interface,GaP/Si heterojunction
更新于2025-09-04 15:30:14
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Construction of Ti3+ self-doped TiO2/BCN heterojunction with enhanced photoelectrochemical performance for water splitting
摘要： Ti3+ self-doped TiO2/BCN heterojunction (Ti3+-TiO2/BCN) was constructed via a hydrothermal method with using NaBH4 as reducing agent. The BCN nanosheets function as a good support to block the agglomeration of Ti3+-TiO2 nanoparticles, which decreased the recombination of photogenerated charge carriers. The Ti3+-TiO2/BCN sample exhibited enhanced electronic conductivity and absorption in visible light region because of the introduction of Ti3+ and oxygen vacancies (Ov). The as-prepared Ti3+-TiO2/BCN sample showed enhanced photoelectrochemical (PEC) performance as confirmed by analyses of LSV, EIS, Bode plots and M–S. Under the visible light irradiation, the optimally Ti3+ self-doped TiO2/BCN heterojunction sample yield a photocurrent density of ～ 0.69 mA/cm2 at 1.23 V versus RHE, which is over three times as high as BCN and TiO2/BCN at the same conditions.
关键词： hydrothermal method,photoelectrochemical performance,NaBH4,water splitting,Ti3+ self-doped TiO2/BCN heterojunction
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Characterization of Bandgap Engineering on Operative Transistor Devices by Spectral Photon Emission
摘要： In modern IC technologies, it is very common to use germanium enriched silicon in order to increase field effect transistor (FET) channel carrier mobility for high performance. The germanium content modifies the effective semiconductor band gap EG. Thus, the bandgap energy EG is an important technology performance parameter. EG can be obtained in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is taken here as non-destructive in operative method to characterize engineered bandgaps transistor devices, while the device remains fully functional. Proving this technique with the nominal silicon bandgap on an (unstrained) 120nm technology FET, the characterization capability for bandgap engineering is successfully demonstrated using SiGe:C HBT. In IC technology, Ge enriched silicon is recently often used to increase channel carrier mobility. As a next step, 14/16nm p-type FinFET devices have been investigated by applying a bias voltage to the body and thereby activating one of the body/diffusion p-n junctions in forward bias. By measuring the spectral distribution of emission intensity through the backside of the operating device with an InGaAs detector, EG of the engineered bandgap can be determined in the FinFETs as well, in case of the investigated p-type FinFETs to 0.84 eV. This opens a new path for contactless fault isolation by quantitative local determination of bandgap engineering.
关键词： Bandgap engineering,body diode,heterojunction bipolar transistor,body bias voltage,contactless fault isolation,parasitic operation,FinFET,germanium,MOSFET,p-n junction,bandgap characterization,spectral photon emission,SiGe,HBT
更新于2025-09-04 15:30:14
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Industrial View of III-V Devices Compact Modeling for Circuit Design
摘要： This paper presents a commercial or industrial view of III–V compact models for circuit design. We contrast the requirements of III–V modeling to those of silicon. The differences in requirements are strongly rooted in the applications that III–V devices are used in the end user of III–V models and the differences in the “ecosystems” of the technologies. These differences create both challenges and opportunity for the III–V modeling community.
关键词： semiconductor device modeling,integrated circuit modeling,HEMTs,heterojunction bipolar transistor
更新于2025-09-04 15:30:14
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Effect of TiO<sub>2</sub>-rGO heterojunction on electron collection efficiency and mechanical properties of fiber-shaped dye-sensitized solar cells
摘要： It is demonstrated that the incorporation of graphene materials into oxide-based photoanodes can greatly increase the photoelectrochemical devices’ performances. In this work, reduced graphene oxide (rGO) has been incorporated into P25-TiO2 nanoparticle (NP) based photoanodes for fiber-shaped dye-sensitized solar cells (FDSSCs). Results showed that the rGO nanosheets have been uniformly dispersed within P25 nanoparticle layers. And as expected, the incorporation of rGO increased the FDSSCs’ short current density from 8.344 to 12.935 mA cm-2, open circuit voltage from 0.775 to 0.798 V, resulting into their power conversion efficiency (PCE) from 3.940% to 5.364%. This large increasement in PCE could be due to two aspects, i.e., the improved electron transport properties via rGO and the enhanced separation of photogenerated hole-electron pairs via rGO-TiO2 heterojunction. Furthermore, the incorporation of rGO can also make the FDSSCs have good mechanical properties, which is very crucial for their future applications in smart wearable electronics. In addition, based on our analysis, a possible rGO/multi-NP coupling enhancement mechanism was proposed.
关键词： fiber-shape,heterojunction,dye-sensitized solar cells,titanium dioxide,reduce graphene oxide (rGO)
更新于2025-09-04 15:30:14
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In situ synthesis of Z-scheme BiPO4/BiOCl0.9I0.1 heterostructure with multiple vacancies and valence for efficient photocatalytic degradation of organic pollutant
摘要： Design and construction of Z-scheme photocatalyst has been attracted much attention, which is a great challenge to develop highly efficient photocatalyst without the external redox mediators. Herein, a novel efficient redox-mediator-free Z-scheme BiPO4/BiOCl0.9I0.1 heterojunction is synthesized in situ via a mild 90℃ water bath reaction. The as-synthesized BiPO4/BiOCl0.9I0.1 heterostructure exhibits outstanding photocatalytic performance for degradation of phenol and Rhodamine B, approximately 2.6 and 4.3 times higher than that of BiOCl0.9I0.1, respectively. The BiPO4/BiOCl0.9I0.1 heterostructure have multiple vacancies and valence, such as Bi5+, Bi3+, Bi(3-x)+, I-, I3-, and IO3-, which could facilitate the charge separation and transfer in the photocatalytic process. The higher photocatalytic activity of redox-mediator-free Z-scheme BiPO4/BiOCl0.9I0.1 heterostructure could be attributed to the strong redox ability, multiple charge transfer channels via the various defects, and tight contact due to in situ synthesis. The finding provides some new insights for the design of effective direct Z-scheme photocatalyst with multiple defects.
关键词： direct Z-scheme heterojunction,photocatalysis,BiOCl0.9I0.1/BiPO4,redox-mediator-free,multiple defects
更新于2025-09-04 15:30:14
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Fabrication of Perylene Tetracarboxylic Diimide-Graphitic Carbon Nitride Heterojunction Photocatalyst for Efficient Degradation of Aqueous Organic Pollutants
摘要： Metal-free g-C3N4 is the promising candidate for the next generation visible light-responsive photocatalyst, however, high recombination probability of the photogenerated charge carriers on g-C3N4 limits its photocatalytic activity. To further increase the intrinsic photocatalytic activity of g-C3N4, here perylene tetracarboxylic diimide-g-C3N4 heterojunctions (PDI/GCN) are prepared by one-step imidization reaction between perylene tetracarboxylic dianhydride (PTCDA) and g-C3N4 in aqueous solution. By the combination of various testing results it is confirmed that the surface hybridization of PTCDA and g-C3N4 in the PDI/GCN heterojunctions via O=C?N?C=O covalent bonds occurs at lower PTCDA-to-g-C3N4 weight percentage. By selecting p-nitrophenol and levofloxacin as the target organic pollutants, the visible light photocatalytic performance of the PDI/GCN heterojunctions are studied. It shows that the PDI/GCN heterojunction prepared at PTCDA-to-g-C3N4 weight percentage of 1% exhibits remarkably higher visible light photocatalytic degradation and mineralization ability towards aqueous target pollutants as compared with g-C3N4 and Degussa P25 TiO2. On the basis of the experimental results including photoelectrochemistry, indirect chemical probe and electron spin resonance spectroscopy it is verified that the surface hybridization in the heterojunctions is responsible for this enhanced photocatalytic activity via accelerating the migration and separation of the photogenerated charge carriers, causing to produce more active species like ?O2?, hVB+ and ?OH for deep oxidation of PNP or LEV to CO2 and inorganic anions.
关键词： graphitic carbon nitride,heterojunction,perylene tetracarboxylic diimide,visible light photocatalysis,organic pollutant
更新于2025-09-04 15:30:14
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Electrical Performances of InN/GaN Tunneling Field-Effect Transistor
摘要： In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling ?eld-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including Ioff, on/off current ratio (Ion/Ioff), subthreshold swing (S), cut-off frequency (ft), maximum oscillating frequency (fmax), and Johnson’s ?gure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed Ioff, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (Lch) of 50 nm demonstrated maximum Ion = 3.5 mA/μm, extremely low Ioff = 1 × 10?21 A/μm, minimum S of 8.8 mV/dec, and the maximum values of ft and fmax are obtained as 100 GHz and 5.5 THz, respectively. In order to con?rm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz · V.
关键词： III-Nitride Heterojunction,Double Gate,Gallium Nitride,Power Device,InN/GaN,Field-Effect Transistor
更新于2025-09-04 15:30:14