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Comparison and analysis of performance and degradation differences of crystalline-Si photovoltaic modules after 15-years of field operation
摘要： This paper reports on a unique evaluation-opportunity for comparing modules from two-different manufacturers that were deployed for a long-period (~15 years) under similar circumstances: (a) for the same distributed, rural-power applications, (b) operating under the same climate-conditions and geographical area, (c) with devices manufactured and installed at the same time. But these modules had very different resulting observed changes in their operational and physical characteristics over their long field-exposures. The PV modules were dispersed in a tropical climate-zone (northern-region of Minas Gerais, Brazil). Visual inspections of the two-module sets concluded that one module source (SET A) had almost no encapsulant discoloration and few indications of delamination and corrosion. In contrast, the other module source (SET B) had significant yellowing/browning, widespread-areas of delamination, and fairly extensive interconnect-corrosion. The corresponding measured changes in the electrical characteristics were: SET A having average annual loss in power of 0.4–0.5%, and SET B with 2.3–3.7%/year over their installation times. Encapsulant discoloration and delamination provided the first clues to the measured differences in module performance and are attributed to the existing climate conditions of high-ultraviolet (UV) radiation exposures and high-ambient temperatures. The bases for the performance differences of these two module sets were examined using complementary electrical, physical and chemical characterization of the module materials. The primary goal of this paper is to identify the root causes for the degradation differences (one set meeting specifications, the other not), based upon the critical module materials properties/processing and climatic exposures.
关键词： Reliability of PV modules,Encapsulants,Module performance loss,Failure rate,Degradation modes and mechanisms,EVA
更新于2025-09-19 17:13:59
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Investigation of performance of P3HT:PCBM organic photovoltaic module under real operating conditions
摘要： In this work the behavior of an organic solar module operating under real solar radiation conditions is presented. This allows to understand which parameters limit the e?ciency of an organic device and their underlying mechanisms. The characterization of a module, produced by CSEM Brasil, with active layer P3HT:PCBM, is based on instantaneous voltage and current curves, dark current curves and analysis of the module operating continuously with ?xed voltage. This allows to extract the parameters of the equivalent circuit of the module, such as diode saturation current (I0), series resistance (RS) and shunt resistance (RSH) as well as to understand the in?uence of di?erent levels of radiation and temperature on such parameters. The work presented was performed by using a commercial organic solar module in extensive outdoor experiments. The results are based on continuous use and for several levels of radiation and temperature under real operating conditions in comparison with a theoretical model for the ?rst time. With the continuous tests it was possible to demonstrate the average daily generation of the module in Wh/m2, and also to verify experimentally, that the module presents better e?ciency for di?use radiation.
关键词： Organic solar module,Real operating conditions,P3HT:PCBM,Performance characterization,Photovoltaic
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII) - Seoul, Korea (South) (2019.7.12-2019.7.15)] 2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII) - PV System Power Model Application in Smart Cities
摘要： The photovoltaic (PV) system energy generation is closely related to climate conditions, installation site, and system design. In this paper, a simple energy generation model is proposed and established by means of module temperature and solar irradiation, module temperature coefficient, module rated power, number of modules, and three correction coefficients including temperature derating coefficient, inverter conversion loss coefficient, and other loss coefficients. The experiment results show that the estimation model proposed in this paper has high accuracy using the Mean Absolute Percentage Error (MAPE) model as the evaluation index, the estimation model MAPE is 6.75%, while the PV SYST software simulation has MAPE of 11.90%. According to international MAPE evaluation standards, the method proposed in this paper has higher accuracy level than PV SYST software. This model can be used for the estimation of energy generation when installing solar PV systems, and can be used for the reasonable assessment of PV system long-term power generation, to predict system power generation anomalies, and reduce system abnormalities caused by downtime losses, and increase investment efficiency.
关键词： PV system,module,power model,inverter
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE International Conference on Consumer Electronics - Asia (ICCE-Asia) - Bangkok, Thailand (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Consumer Electronics - Asia (ICCE-Asia) - A.I. in Laser Diode Module Manufacturing
摘要： This paper describes application of Artificial Intelligence using machine learning and deep learning at our laser diode module manufacturing facility. Implementing A.I. into data analysis and classification problems, various benefits such as quality control, human work reduction and efficient usage of big data have been obtained.
关键词： machine learning,autoencoder,Scikit learn,laser diode module,convolutional neural network
更新于2025-09-19 17:13:59
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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Influence of an Impulse Current near a Photovoltaic Solar Module on Bypass Diode Characteristics
摘要： Recently, failures in photovoltaic systems (PVSs) caused by lightning damage have been increasing. When lightning strikes a PVS, the bypass diode (BPD), which is a protection element in the solar cell module (PV-MDL), breaks down and burns out, rendering the PVS inoperable. In this study, an impulse current test was conducted to clarify the lightning-induced BPD failure mechanism. The impulse current with a peak of 100 kA was employed to simulate a lightning strike traveling in the vicinity of a PV-MDL. The results indicated that a BPD fails because lightning (induced electromotive force) strikes in the bypass circuit of the PV-MDL as the impulse current passes in its vicinity. Furthermore, installing a metal frame in the PV-MDL was shown to reduce the negative impact of such lightning strikes.
关键词： impulse current test,bypass diode,lightning,photovoltaic module,induced lightning
更新于2025-09-19 17:13:59
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Microfabrication of a Monolithic Air-Filled Half-Mode Waveguide for Millimeter-Wave Applications
摘要： This paper examines the AP-to-ECM interfaces of five vehicles equipped with electronic throttle control systems. All five vehicles employ simple voltage level sensing from two or three sensors in the accelerator pedal assembly. The purpose of this paper is to identify differences in the AP-to-ECM interfaces of vehicles with high reported rates of unintended acceleration compared to vehicles with low reported rates of unintended acceleration. This paper does not attempt to identify the root causes of unintended acceleration; however, it points out important design issues that suggest a set of best practices for an electronic throttle control design.
关键词： accelerator pedal,Unintended acceleration,engine control module.
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Outdoor Performance of PV Technologies in Simulated Automotive Environments
摘要： GaAs, monocrystalline Si, and multicrystalline Si modules were tested in a configuration designed to simulate car-roof-integrated mounting. The increase in module temperature above ambient was similar for the four Si modules, but less (~76%) for the GaAs modules. Local temperatures within each module were strongly dependent on the optical properties of the back sheet. The lower operating temperature combined with smaller temperature coefficient of the GaAs modules resulted in higher performance ratios for the GaAs modules even for ambient temperature < 25°C. The quantification of the relative performance of the modules in a thermal environment relevant to implementation in vehicles provides information for the selection of PV modules for this emerging application.
关键词： monocrystalline Si,GaAs,performance ratios,module temperature,automotive environments,multicrystalline Si,PV technologies
更新于2025-09-19 17:13:59
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[IEEE 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2019.11.25-2019.11.27)] 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Junction Temperature Prediction of the Multi-LED Module with the Modified Thermal Resistance Matrix
摘要： The junction temperature of LEDs is important for its life, reliability and efficacy. The existing transient measurement method of the junction temperature of using transient thermal tester (T3ster) based on the time-resolved measuring with a constant bias current according to the JESD51-14 is able to obtain the LED junction temperature rise based on the known temperature of thermostat module as the heatsink. In practice, without T3ster and the thermostat module, for multi-LED module with multiple heat sources in the luminaries, the thermal resistance matrix needs to be built to realize the thermal transfer between one another such that their junctions temperature raises can be calculated from their thermal power consumption. It is demonstrated that without measurement of the temperature heatsink temperature, the individual junction temperature of LEDs (groups) in multi-LED module with a thermistor (NTC or PTC) on its PCB measuring the local reference temperature can be obtained from the modified N x (N+1) thermal resistance matrix having N LED heat sources and N+1 junction temperature rise. A multi-LED module sample with 3 groups of LEDs has been studied at 5 different ambient temperatures and 2 additional different power combinations using 3 thermal resistance matrices built at 3 different ambient temperatures for comparison. The result showed that the modified method is effective and convenient for measurement of the junction temperature of the multi- LED modules with a similar accuracy comparing to the conventional one in the local reference temperature range of 20~100?C.
关键词： junction temperature,multi-LED module,T3ster,thermal resistance,thermal resistance matrix
更新于2025-09-19 17:13:59
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An Influence of the Module Structure on Reliability of Crystalline Silicon Solar Cells
摘要： To investigate the influence of the difference in module structures on the degradation of crystalline silicon solar cells, two different photovoltaic modules were fabricated, and a high-temperature and high-humidity test was carried out. The degradation modes of these modules were compared to each other using electrical characteristics and electroluminescence images. Degradation of outputs occurred in both modules, and different degradation modes were confirmed by electroluminescence images. The difference in degradation modes between these modular structures could be due to the difference in concentration distribution attributable to the moisture and acetic acid generated from the encapsulant inside the module.
关键词： Moisture Ingress,Metallization,Damp Heat Test,Corrosion,Aluminum,Photovoltaic Module,Silver Paste
更新于2025-09-19 17:13:59
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Comparative Evaluation of Lifetime of Three-Level Inverters in Grid-Connected Photovoltaic Systems
摘要： The cost of the PV energy reduction is still required to increase the penetration level of PV systems in the energy market. The reliability of PV inverters is one of the important aspects to be enhanced in order to reduce the cost of PV energy, since it is closely related to the maintenance cost and the annual energy production. In this paper, the lifetime of NPC and T-type inverters, which are three-level inverter topologies that are widely used for PV systems, are comparatively evaluated with a 30 kW grid-connected PV system. It is performed by focusing on power devices since the power electronic components of both converters are the same except for the power devices. Therefore, this result can represent the comparison of the reliability performance of the NPC and T-type inverters. The power loss and temperature distributions of power devices are analyzed and their e?ciencies are compared at di?erent power levels with di?erent switching frequencies. The lifetimes of the reliability-critical power devices in the NPC and T-type inverters are estimated, respectively with a one-year mission pro?le of the PV system, and the results are compared.
关键词： three-level inverter,IGBT module,PV inverter,reliability,power device,lifetime
更新于2025-09-19 17:13:59