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oe1(光电查) - 科学论文

5 条数据
?? 中文(中国)
  • Effect of processing conditions on (Ba1-xCax)(Ti0.9Sn0.1)O3 lead-free ceramics for the enhancement of structural, humidity sensing and dielectric properties

    摘要: The present study reports detailed guidelines for the preparation of high-quality perovskite (Ba1-xCax)(Ti0.9Sn0.1)O3 (BCTS) (x = 0.0–0.1) lead-free ceramics by solid state reaction. The compositions (x = 0.0–0.04) exhibit orthorhombic–tetragonal phase transition (TO-T), except x ≥ 0.06 that shows a pure tetragonal structure phase which conformed by X-ray diffraction (XRD). The microstructure and purity of the sintered ceramics were examined using scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS). Some pores existing in the grain boundary were observed at high concentrations of Ca content. Field emission scanning electron microscope (FE-SEM) was used to examine the morphology of sensing film of the calcined powder and it was prepared as a humidity sensor using screen-printing technique. All the compositions exhibited poor sensitivity toward the humidity sensing in the range of 0–98% RH at room temperature. Hot-stage microscope (HSM) has been used to investigate the sintering curve of the pure calcined powder and it was found that the suitable sintering temperature for obtaining a fully dense microstructure is 1400 °C. The highest values of permittivity (εr = 46,515, at 10 kHz) and piezoelectric coefficient (d33 = 510 pC/N) were achieved in the composition x = 0.02. The difference between alumina and platinum crucibles for the processing of the powders has been introduced, and by the aid of dispersive spectrometer analysis and it was indicated that use of alumina crucibles leads to the undesired presence of Al in the ceramics, which can be prevented by using a capped platinum crucibles.

    关键词: Lead-free ceramics,Humidity sensing,Phase formation,Processing,Dielectric properties

    更新于2025-09-23 15:23:52

  • Phase formation and crystal growth of Ca <sub/>3</sub> TaAl <sub/>3</sub> Si <sub/>2</sub> O <sub/>14</sub> piezoelectric single crystal

    摘要: Ca3TaAl3Si2O14 (CTAS) piezoelectric powders were sintered at various temperatures to investigate phase formation. The CTAS powder sintered at 1350 °C was composed of a main phase with a langasite-type structure in addition to two secondary phases, whereas the main phases of the CTAS powders sintered at 1200 and 1300 °C were the secondary phases in X-ray di?raction patterns. CTAS single crystals with a diameter of 1 in. were grown by a Czochralski method using the sintered powders, and CTAS single crystals without impurity phases could be grown using the powder sintered at 1350 °C. A higher sintering temperature of starting materials contributes to the creation of CTAS single crystals without impurity phases.

    关键词: Ca3TaAl3Si2O14,piezoelectric,crystal growth,phase formation,single crystal

    更新于2025-09-23 15:21:01

  • Structural, optical and electrical studies of DC-RF magnetron co-sputtered Cu, In & Ag doped SnS thin films for photovoltaic applications

    摘要: This work reports the tuning of optical and electrical properties of SnS through the incorporation of Cu, In and Ag atom without altering its chemical and crystal structural properties, using DC-RF magnetron co-sputtering technique with an in-situ substrate temperature of 400 °C. Doping is increased up to ~10% by varying the DC sputtering voltage as evident from EDAX analysis. Morphological studies show the variation in surface morphology, particle size and surface roughness due to the incorporation of dopant cation into SnS lattice sites. Film with optimized doping of ~5% resulted the substitutional doping of dopant cations (Cu2+, In3+ and Ag2+) into SnS lattice sites which resulted an improved absorption coefficient and hall carrier concentration with a decrease in band gap and electrical resistivity. Hall measurement studies of Cu 4.8% doped SnS film shows the p-type conductivity with lowest electrical resistivity of 90 Ω cm and improved carrier concentration of 1017 cm?3.

    关键词: SnS thin films,Optical energy band gap,Co-sputtering,Electrical resistivity,Phase formation

    更新于2025-09-11 14:15:04

  • Formation of Nd1–xBixFeO3 Nanocrystals under Conditions of Glycine-Nitrate Synthesis

    摘要: Nd1–xBixFeO3 nanocrystals with crystallite size 30?60 nm have been prepared under conditions of glycine–nitrate burning. Single-phase Nd1–xBixFeO3 nanocrystals are formed over the entire studied concentrations range if the glycine–nitrate synthesis is performed in excess of the oxidizer. Under these conditions, a continuous range of the Nd1–xBixFeO3 solid solutions (0 ≤ х ≤ 0.75) crystallized in the rhombic system (space group Pbnm) are formed without crystallization of the burning intermediates. The Nd1–xBixFeO3 solid solutions (х = 0.775, 0.8) crystallize in the rhombic system (space group Pbаm).

    关键词: solid solutions,nucleation,solution burning,BiFeO3,nanocrystals,NdFeO3,phase formation

    更新于2025-09-09 09:28:46

  • Formation of BiFeO3 Nanoparticles Using Impinging Jets Microreactor

    摘要: The influence of the reactants mixing in an impinging jets microreactor of the formation of single-phase nanocrystals of bismuth orthoferrite has been studied. The 30–100 nm amorphous particles are formed under the impinging jets microreactor conditions, which are converted in bismuth orthoferrite with mean crystallite size 17 nm at 420°С.

    关键词: impinging jets microreactor,phase formation mechanism,bismuth ferrite

    更新于2025-09-09 09:28:46