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Recent developments in flexible photodetectors based on metal halide perovskite
摘要： Flexible photodetectors (FPDs) have been receiving increasing attention in recent years because of their potential applications in electronic eyes, bioinspired sensing, smart textiles, and wearable devices. Moreover, metal halide perovskites (MHPs) with outstanding optical and electrical properties, good mechanical flexibility, low-cost and low-temperature solution-processed fabrication have become promising candidates as light harvesting materials in FPDs. Herein, we comprehensively review the developments of FPDs based on MHPs reported recently. This review firstly provides an introduction with respect to the performance parameters and device configurations of perovskite photodetectors, followed by the specific requirements of FPDs including substrate and electrode materials. Next, chemical compositions, structures and preparation methods of MHPs are presented. Then, the FPDs on the basis of single-component perovskite and hybrid structure perovskite are discussed, subsequently, self-powered flexible perovskite photodetectors were presented. In the end, conclusions and challenges are put forward in the field of FPDs based on perovskites.
关键词： metal halide perovskites,flexible photodetectors,self-powered
更新于2025-09-11 14:15:04
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Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga2O3 Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Seperation Interface of Photogenerated Carriers
摘要： Solar-blind photodetectors have been widely developed because of their great potential application in biological analysis, ultraviolet communication, and so on. Photodetectors constructed by vertically aligned nanorod arrays (NRAs), have attracted intensive interest recently owing to the virtues of low light reflectivity and rapid electron transport. However, limited by the insufficient contact between the upper electrode and NRAs because of uneven NRAs, photo-generated carriers cannot be effectively separated and transferred. In this work, a novel photoelectrochemical (PEC) type self-powered solar-blind photodetectors constructed in the form of Ga2O3 NRAs/electrolyte solid/liquid heterojunction with a large photogenerated carrier separation interface has been fabricated, β-Ga2O3 NRAs PEC photodetector shows a photoresponsivity of 3.81 mA/W at a bias voltage of 0 V under the 254 nm light illumination with the light intensity of 2.8 mW/cm2, thus yielding a Iphoto/Idark ratio of 28.97 and an external quantum efficiency of 1.86 %. Our results provide a novel device structure of solar-blind photodetector with high efficient deep-ultraviolet photodetection and low power consumption.
关键词： photoelectrochemical,Ga2O3 NRAs,solid-liquid heterojunction,solar-blind photodetectors,self-powered
更新于2025-09-11 14:15:04
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Routine Microscopy in Quantum Dot Industry
摘要： Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi2Se3/Te@Se heterojunctions (Bi2Se3/Te@Se) are synthesized through the epitaxial growth of Bi2Se3 nanosheets (Bi2Se3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low-cost and facile solvothermal process. Bi2Se3/Te@Se are further applied in high-performance photoelectrochemical (PEC)-type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as-prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self-driven ability and excellent long-term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high-performance optoelectronic devices.
关键词： photodetectors,self-driven,topological insulators,epitaxial growth,heterojunctions
更新于2025-09-11 14:15:04
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Nanowire network-based photodetectors with imaging performance for omnidirectional photodetecting through a wire-shaped structure
摘要： Wearable photodetectors (PDs) have attracted extensive attention from both scientific and industrial areas due to intrinsic detection abilities as well as promising applications in flexible, intelligent, and portable fields. However, most of the existing PDs have rigid planar or bulky structures which cannot fully meet the demands of these unique occasions. Here, we present a highly flexible, omnidirectional PD based on ZnO nanowire (NW) networks. ZnO NW network-based PDs exhibit the imageable level performance with an on/off ratio of about 104. Importantly, a ZnO NW network can be assembled onto wire-shaped substrates to construct omnidirectional PDs. As a result, the wire-shaped PDs have excellent flexibility, a large light on/off ratio larger than 103, and 360° no blind angle detecting. Besides, they exhibit extraordinary stability against bending and irradiation. These results demonstrate a novel strategy for building wire-shaped optoelectronic devices through a NW network structure, which is highly promising for future smart and wearable applications.
关键词： Wearable photodetectors,Flexible optoelectronic devices,Omnidirectional photodetecting,ZnO nanowire networks
更新于2025-09-11 14:15:04
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Spin‐On‐Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active‐Matrix Near‐Infrared Imaging
摘要： Flat-panel imagers have wide applications in industrial and medical inspections. Nonetheless, large area infrared imaging remains a challenge due to the fact that the state-of-the-art infrared sensors are usually based on silicon or germanium technologies, which are limited by the wafer size. Recent advances in low bandgap Sn–Pb perovskite photodiodes (PDs) and indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) matrix backplane bring new opportunity for developing the large area near-infrared image sensor. As a proof of concept, a 12 × 12 pixels array with each pixel independently controlled by the gate voltage of a TFT are constructed. Arrays of Sn–Pb based perovskite PDs are spin deposited onto the IGZO TFT drain electrode via self-assembled patterning process. The low bandgap perovskite PD exhibits a broad spectral response for wavelength from 300 to 1000 nm, featuring a high light to the dark current ratio of ≈104, and a high specific detectivity (D*) of ≈1011 Jones at 850 nm (biased at ?0.1 V). The integration takes advantage of the high mobility of IGZO transistors and the high infrared sensitivity of low Sn–Pb perovskite materials, which enables the next generation near-infrared flat-panel imager with high frame rate and low operating voltages.
关键词： near-infrared,photodiodes,perovskites,transistors,photodetectors,imaging
更新于2025-09-11 14:15:04
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High-Performance Organic Photodetectors by Introducing a Non-Fullerene Acceptor to Broaden Long Wavelength Detective Spectrum
摘要： We demonstrate the broadband visible organic photodetectors (OPDs) by introducing a non-fullerene acceptor of 3,9-bis(2-methylene-(3-(1,1dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3d:2,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene (ITIC) into the bulk heterojunction (BHJ) based on a conventional system of poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl C71-butyric acid methyl ester (PC71BM) .The resultant OPDs exhibit a specific detectivity beyond 1012 Jones in the whole visible region ranged from 380 nm to 760 nm, and the highest detectivity reaches 2.67 × 1012 Jones at 710 nm. UV-Vis absorption spectrum, steady-state photoluminescence, atomic force microscopy, and space-charge-limited current property were applied to analyze the film characteristics of obtained OPDs. Owing to the long-wavelength absorption band of ITIC, the spectral photodetection range has been broadened effectively, and better film morphology, more effective energy transfer, and the reduced electron mobility in the active layer are responsible for the excellent photodetection capability. The proposed scheme provides a reliable strategy for implementing high-performance broadband visible OPDs.
关键词： Organic photodetectors,UV-Vis absorption,Non-fullerene acceptor,Surface morphology,Full visible light photodetection
更新于2025-09-11 14:15:04
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Solution-Processed Ultrahigh Detectivity Photodetectors by Hybrid Perovskite Incorporated with Heterovalent Neodymium Cations
摘要： Hybrid perovskite materials have drawn a remarkable attention for approaching high-performance photovoltaics owing to their superior optoelectronic properties. But most of research studies focused on the pristine hybrid perovskite CH3NH3PbI3. In this study, we utilize a newly developed CH3NH3PbI3:xNd3+ (x = 0.5 mol %) thin film, where Pb2+ is partially substituted by a heterovalent Nd3+ cation, as the photoactive layer for solution-processed perovskite photodetectors. It is found that the resultant CH3NH3PbI3:xNd3+ (x = 0.5 mol %) thin film possesses superior thin film morphology, enhanced and balanced charge carrier mobilities, and suppressed trap density, resulting in enhanced photocurrent and reduced dark current for perovskite photodetectors by the CH3NH3PbI3:xNd3+ (x = 0.5 mol %) thin film. Thus, operated at room temperature, solution-processed perovskite photodetectors exhibit over 1014 cm Hz1/2 W?1 photodetectivity in a spectrum range from 350 to 800 nm, a linear dynamic range over 100 dB, and fast response time. All these results indicate that high-performance solution-processed perovskite photodetectors can be realized by novel hybrid perovskite materials, where Pb2+ is partially substituted by heterovalent Nd3+ cations.
关键词： solution-processed,neodymium cations,heterovalent substitution,photodetectors,hybrid perovskite
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Al <sub/>x</sub> In <sub/>1-x</sub> As <sub/>y</sub> Sb <sub/>1-y</sub> Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for 2-μm Detection
摘要： We report separate absorption, charge, and multiplication (SACM) avalanche photodiodes (APDs) in the AlxIn1-xAsySb1-y material system for 2-μm detection. Gain, dark current, and low excess noise are demonstrated.
关键词： noise figure,optoelectronic devices,photodetectors,Avalanche photodiodes,dark current
更新于2025-09-11 14:15:04
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Epitaxial Growth of Topological Insulators on Semiconductors (Bi <sub/>2</sub> Se <sub/>3</sub> /Te@Se) toward High-Performance Photodetectors
摘要： Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi2Se3/Te@Se heterojunctions (Bi2Se3/Te@Se) are synthesized through the epitaxial growth of Bi2Se3 nanosheets (Bi2Se3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low-cost and facile solvothermal process. Bi2Se3/Te@Se are further applied in high-performance photoelectrochemical (PEC)-type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as-prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self-driven ability and excellent long-term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high-performance optoelectronic devices.
关键词： photodetectors,self-driven,topological insulators,epitaxial growth,heterojunctions
更新于2025-09-11 14:15:04
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Wearable Gallium Oxide Solar-blind Photodetectors on Muscovite Mica Having Ultra-High Photoresponsivity And Detectivity With Added High Temperature Functionalities
摘要： Wearable Gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room temperature as well as high temperature operations. The ultra-high photoresponsivity of 9.7 A/W is obtained for 5V applied bias at room temperature under 75 μW/cm2 weak illumination of 270 nm wavelength. The detector enables very low noise equivalent power (NEP) of 9×10-13 W/Hz1/2 and ultra-high detectivity of 2×1012 jones which shows the magnificent detection sensitivity. Further, bending tests are performed for robust utilization of flexible detectors up to 500 bending cycles with each bending radius of 5 mm. After 500 bending cycles, device shows slight photocurrent decrease. The bending performances exhibit excellent potential for wearable applications. Moreover, photocurrent and dark current characteristics above room temperature demonstrate the outstanding functionalities till 523K temperature which is remarkable for flexible photodetectors. The obtained results show the potential of Gallium oxide solar-blind photodetectors at room temperature and high temperatures environments which pave the ways for futuristic smart and flexible sensors.
关键词： photoresponse,Gallium Oxide,Solar-blind photodetectors,detectivity,flexible photodetector,Mica
更新于2025-09-11 14:15:04