- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Gallium Oxide || Ga2O3 nanobelt devices
摘要： β-Gallium oxide (β-Ga2O3) is attractive as a novel material for (opto)electronics, especially high-power electronics and solar-blind photodetectors (PDs). It has an ultrawide direct bandgap of around 4.8–4.9 eV at room temperature and high thermal and chemical stabilities [1, 2]. The theoretical electrical breakdown field (Ebr) of β-Ga2O3 is known to be (cid:1)8 MV/cm, and 3.8 MV/cm of Ebr has been experimentally demonstrated in a recent report, recording a higher value than those of GaN and SiC. Baliga’s figure of merit (BFOM) of β-Ga2O3 is also superior among some of the other popular wide-bandgap semiconductors, such as 4H-SiC and GaN [3–6]. These outstanding properties have led to a large number of reports on various electrical devices based on β-Ga2O3 including metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs), and Schottky barrier diodes [7–10]. Furthermore, the wide bandgap of β-Ga2O3 provides intrinsic solar blindness that allows fabrication of solar-blind PDs without the need for additional optical filters that block light in the range of long wavelength [11]. Single-crystal β-Ga2O3 is commercially available as a various of growth methods exist; especially the edge-defined film-fed growth (EFG) method that can be used to grow bulk β-Ga2O3 substrates with high crystal quality [12, 13]. However, the low thermal conductivity of β-Ga2O3 has to be considered when fabricating high-power electrical devices.
关键词： high-power electronics,β-Ga2O3,wide-bandgap semiconductors,optoelectronics,solar-blind photodetectors
更新于2025-09-09 09:28:46
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[OSA CLEO: Applications and Technology - San Jose, California (2014..-..)] CLEO: 2014 - 2.5 D photonic crystal quantum cascade detector
摘要： Quantum cascade detectors are intersubband photodetectors that offer a vast design freedom. By combining it with a novel photonic crystal cavity, a significant improvement of the detectors performance could be achieved.
关键词： quantum cascade detector,intersubband photodetectors,photonic crystal cavity
更新于2025-09-09 09:28:46
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Crystal facet engineering induced anisotropic transport of charge carriers in a perovskite
摘要： Precise control of crystal orientations and macroscopic morphology of a perovskite crystal is crucial for various optoelectronic applications relying on charge carrier transport tuning along exposed crystal facets. Here, taking methylammonium lead bromide (CH3NH3PbBr3) as an example, and employing a novel crystal facet engineering method, we successfully construct two kinds of perovskite crystals with exposed {001} and {110} facets. We find that the free carriers’ photoluminescence lifetime on the {001} facets can be 3 times longer than that on {110} facets. The related mechanisms are investigated via fluorescence lifetime imaging microscopy and in situ transmission electron microscopy. These indicate that the different trap state density of exposed facets and crystal structure changing of CH3NH3PbBr3 under light and electron beam irradiation lead to the differences in carrier transport along different facets. By distinguishing the charge carrier transport on different CH3NH3PbBr3 exposed facets, micro-photodetectors have been constructed. A device fabricated with the {001} exposed facets exhibited two orders of magnitude higher photocurrent and half as much dark current as a {110} facet-based device. Thus, the crystal facet engineering of perovskites can be widely adopted for understanding physical/chemical properties of perovskite crystals and provides great potential for novel perovskite optoelectronic device applications.
关键词： crystal facet engineering,charge carrier transport,optoelectronic applications,photodetectors,perovskite
更新于2025-09-09 09:28:46
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[IEEE NAECON 2018 - IEEE National Aerospace and Electronics Conference - Dayton, OH, USA (2018.7.23-2018.7.26)] NAECON 2018 - IEEE National Aerospace and Electronics Conference - Towards fabrication of mid-IR FPAs with enhanced sensitivity and reduced dark current by using integration with microspherical arrays
摘要： It was demonstrated previously that the efficiency of light collection by individual pixels of mid-wave infrared (MWIR) focal plane arrays (FPAs) can be enhanced by using dielectric microspheres, which provide concentration of light with large angle-of-view. This approach allows miniaturizing photodetector mesas to reduce their thermal current that, in turn, helps increasing the operating temperature of FPAs. In this work, we develop a technology of parallel integration of thousands of microspheres with the pixels. We fabricated microhole arrays and used them as suction grippers for microspheres. It is shown that in large-scale arrays formed by microspheres with several tenths microns in diameter, the fabrication errors below ~1% can be obtained. The fabrication errors can be significantly reduced in arrays formed by larger (>100 microns) microspheres.
关键词： Thermal (uncooled) IR detectors,Imaging,Infrared imaging,Focal plane arrays,Photodetectors
更新于2025-09-09 09:28:46
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Recent Advances in the Functional 2D Photonic and Optoelectronic Devices
摘要： 2D layered materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDCs), and their hybrid systems exhibit wide coverage of bandgaps, unique crystal structures, and the facile integration for potential applications in photonic and optoelectronic devices. In the recent two years, various 2D functional systems have been developed with novel optoelectronic properties, thereby expanding the functional applications. Beyond the speed, efficiency, or sensitivity, these 2D crystals can offer additional advantages and distinct applications in terms of spectrum range, polarization, intensity, and structural designs. The main contents here focus on optoelectronic and photonic devices with unique functional applications, especially mentioning areas as follows: long-wavelength photodetector, 2D polarization-sensitive photodetector, 2D optoelectronic memory, and 2D material-based optical modulator. For each section, the device design, performance, and operational principles are investigated and systematically discussed. Finally, the current research status is summarized and perspectives on possible applications in future are offered.
关键词： optical modulators,2D materials,polarization-sensitive photodetectors,long-wavelength photodetectors,optoelectronic memory
更新于2025-09-04 15:30:14
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Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection
摘要： Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.
关键词： plasmonic waveguides,infrared photodetectors,nanostructures
更新于2025-09-04 15:30:14
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Space-confined physical vapour deposition of high quality ZnTe nanosheets for optoelectronic application
摘要： Low-dimensional semiconductor nanomaterials with novel properties hold great promise for potential electronics and photonics applications. Here we report the growth of high quality ultra-thin ZnTe nanosheets by a space-confined physical vapour deposition route. The as-prepared ZnTe nanosheets are well crystallized and exhibit the zinc-blende crystal structure, with lateral dimension up to tens of micrometers and thickness thin to tens of nanometers. P-type conductivity was confirmed by field-effect transistors based on the individual nanosheet. Photodetectors constructed by the high-quality ZnTe nanosheets exhibit high photoresponsivity (453.9 A W?1), excellent stability and reliability. These results reveal that such high-quality ZnTe nanosheets are excellent candidates for optoelectronic applications.
关键词： Space-confined growth,Photodetectors,Electrical properties,Physical vapour deposition,ZnTe nanosheets
更新于2025-09-04 15:30:14
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Piezo-phototronic effect on optoelectronic nanodevices
摘要： Optoelectronic nanoscale devices have wide applications in chemical, biological, and medical technologies. Improving the performance efficiency of these devices remains a challenge. Performance is mainly dictated by the structure and characteristics of the semiconductor materials. Once a nanodevice is fabricated, its efficiency is determined. The key to improving efficiency is to control the interfaces in the device. In this article, we describe how the piezo-phototronic effect can be effectively utilized to modulate the band at the interface of a metal/semiconductor contact or a p–n junction to enhance the external efficiency of many optoelectronic nanoscale devices such as photodetectors, solar cells, and light-emitting diodes (LEDs). The piezo-phototronic effect can be highly effective at enhancing the efficiency of energy conversion in today’s green and renewable energy technology without using the sophisticated nanofabrication procedures that have high cost and complexity.
关键词： photodetectors,light-emitting diodes,optoelectronic nanodevices,solar cells,piezo-phototronic effect
更新于2025-09-04 15:30:14