- 标题
- 摘要
- 关键词
- 实验方案
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EFFECTS OF ELECTROMAGNETIC DISTURBANCE ON LIGHT INTENSITY SIGNAL OF LASER BEAM SYSTEM
摘要： In performing the experiments, the interference source has the form of a hollow PVC tube wrapped with a current-carrying coil, while the detector has the form of a PIN (Positive-Intrinsic-Negative) photodiode. The experimental results show that the electromagnetic disturbance (EMD) signal effect is dependent on the number of turns, the direction of the electromagnetic field, and the frequency and amplitude of the interference voltage. Specifically, it is shown that when the electromagnetic field acts in the opposite direction to that of the laser beam, the intensity and optical power of the detected signal decrease with an increasing interference frequency or amplitude. By contrast, when the electromagnetic field acts in the same direction as that of the laser beam, the intensity and optical power increase with an increasing interference frequency or amplitude. In addition, it is shown that the effect of EMD on the intensity of the laser beam increases with an increasing laser beam dispersion (i.e., an increasing distance from the laser source).
关键词： laser beam,electromagnetic disturbance,interference frequency,interference amplitude,PIN photodiode
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Laser system for recording optics
摘要： The development of a modern laser system for recording optics is presented in this research paper. Studying optical components for designing this system by various methods, by calculated methods and by a method of using modern modeling package Zemax, was conducted. The results of the calculations and simulation, which led to the preliminary design of the laser system of optics registration, coincide.
关键词： lenses,emission,photodiode,laser system,field distribution
更新于2025-09-19 17:13:59
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - High Speed and High Power Photodiode with 50 GHz Bandwidth
摘要： In this paper, we report a normal incident high speed high power modified uni-traveling carrier photodiode with 3dB bandwidth of 50 GHz and responsivity of 0.1 A/W at -3 V bias voltage.
关键词： High Speed,Uni-Traveling Carrier Photodiode,High Power
更新于2025-09-16 10:30:52
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Sensitive Infrared Photon Counting Detection by Nondegenerate Two-Photon Absorption in Si APD
摘要： We report on the sensitive detection of photons at broadband infrared wavelengths based on the nondegenerate two-photon absorption in the Si avalanche photodiodes. The detected 1700~1850 nm infrared photon energy is lower than Si band gap and the energy difference is complemented by a high intensity pump laser field at 1550 nm. It is thus possible to capitalize on the low noise property of large band gap materials for detecting low energy photons. And the linear intensity response of the detector to the incident infrared photons was observed when the power of pump laser was about 12.42 μW, indicating the dominance of nondegenerate two-photon absorption in the infrared photon detection. An enhancement factor of 20 was observed for the incident signal photon numbers of ~0.14×106 photons per pulse. We offer an alternative to sensitive detection of infrared light. This may also provide new ideas for broadband infrared photon detection in different applications such as optical comb laser ranging, infrared bio-image and so forth.
关键词： Infrared photon detection,silicon avalanche photodiode,nondegenerate two photon absorption
更新于2025-09-16 10:30:52
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Onlinef?hige Signalauswertung für spektraloptische Sensoren mit einer Doppelphotodiode / Online-capable signal processing for spectral-optical sensors using a double-layered photodiode
摘要： Spectral-optical sensor technology records physical as well as (bio-)chemical measurands on the basis of specific spectral property changes of the transducer. In this article a signal evaluation with a double-layered photodiode (DPD) is presented, which is a spectrally selective element and detector at the same time due to its stack structure of two different spectrally sensitive photodiode layers. Instead of extracting the spectral information from a spectrum, the centroid of the overall spectral distribution is evaluated in real time on the basis of the measured ratio of the two wavelength-dependent photocurrents. The performance of the DPD is demonstrated by means of surface temperature measurements with the phosophor NaYF4:Yb3+,Er3+. It is shown that with an integrator-based readout electronics a max. measurement deviation for the centroid wavelength of 0.1 nm can be achieved. In sum, the online-capable signal processing and compact size of the double-layered photodiode foster the on-site applicability of spectral-optical sensors for the process industry, environmental monitoring and many others fields.
关键词： thermometry,anorganic phosphors,optoelectronic interrogator,spectral-optical sensors,Double-layered photodiode
更新于2025-09-16 10:30:52
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Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates
摘要： We investigated the electrical and optical properties of a highly mismatched AlInSb/GaAs photodiode sensor working in the mid-infrared range at room temperature. A substantial increase in the device performance was achieved by controlling the strain energy density in the dislocation ?lter layers and barrier layers to reduce the density of threading and interfacial dislocations, respectively. The resulting photodiode showed a high resistance-area product of 0.24 Ω cm2 and a peak detectivity of 2.2 × 109 cm Hz1/2 W–1 at 3.3 μm.
关键词： AlInSb,GaAs substrates,photodiode,dislocation reduction,mid-infrared
更新于2025-09-16 10:30:52
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Numerical simulation of millisecond laser-induced output current in silicon-based positive-intrinsic-negative photodiode
摘要： Based on the photoelectric e?ect, the output current model of the silicon-based positive-intrinsic-negative (PIN) photodiode irradiated by millisecond pulse laser was established; the time distribution of the output current on the PIN photodiode under di?erent bias voltages, energy densities, and pulse widths were calculated. The results showed that: the output current process of PIN photodiode irradiated by millisecond laser could be divided into three stages: photo-generated current stage, conduction stage and recovery stage; at the photo-generated current stage, the peak value of output current increased with the increase of energy density and bias voltage; at the conduction stage, with the increase of energy density the value of output current remained the same while increased with the increase of bias voltage; at the recovery stage, with the increase of bias voltage the value of recovery time remained the same while increased with the increase of energy density. In this paper, the simulation results were consistent with the experiment results.
关键词： Numerical simulation,Output current,Millisecond pulse laser,Photodiode
更新于2025-09-16 10:30:52
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High-Speed Transmission Circuits Signaling in Optical Communication Systems
摘要： This paper has outlined high-speed transmission circuits signaling in guided or unguided optical communication systems. An efficient prediction scheme to predict the signal distortion caused by intersymbol interference. As high-speed digital signals exceed many gigabits per second speeds, eye diagrams provide the means to quickly and accurately measure signal quality and system performance. Semiconductor understands the capacitance constraints that designers are faced with when using these high-speed interfaces and offers a wide line of ultra-low capacitance electrical spectral density protection devices that service these interfaces, and the noise can be reduced at the optimum circuit at both bandwidths of 167 MHz, and bandwidth of 200 MHz.
关键词： photodiode,a voltage generator,CW laser,noise source,laser VC
更新于2025-09-16 10:30:52
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Low-cost uncooled MWIR PbSe quantum dots photodiodes
摘要： A mid-wave infrared (MWIR) uncooled PbSe-QDs/CdS p–n heterojunction photodiode has been fabricated using a wet-chemical synthesis route. This offers a low-cost alternative to traditional monocrystalline photodiodes relying on molecular beam epitaxy (MBE) technology. It was demonstrated that the post-annealing is critical to tailor the photoresponse wavelength and to improve the performance of photodiodes. After annealing at 673 K in air for 0.5 h, the ligand-free PbSe-QDs/CdS photodiode exhibits a MWIR spectral photoresponse with a cutoff wavelength of 4.2 mm at room temperature. Under zero-bias photovoltaic mode, the peak responsivity and specific detectivity at room temperature are 0.36 (cid:1) 0.04 A W(cid:3)1 and (8.5 (cid:1) 1) (cid:4)108 cm Hz1/2 W(cid:3)1, respectively. Temperature-dependent spectral response shows an abnormal intensity variation at temperatures lower than 200 K. This phenomenon is attributed to the band alignment transition from type II to type I, resulting from the positive temperature coefficient of PbSe. In addition, it was proved that In doped CdSe (CdSe:In) films could be used as a promising new candidate of infrared transparent conductive electrodes, paving the way for monolithic integration of uncooled low-cost MWIR photodiodes on Si readout circuitry.
关键词： infrared transparent conductive electrodes,MWIR,photodiode,CdSe:In,wet-chemical synthesis,PbSe-QDs,annealing
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Narrow bandgap Bi <sub/>2</sub> Te <sub/>3</sub> /Sb <sub/>2</sub> Te <sub/>3</sub> thermophotovoltaic cells
摘要： A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词： Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-16 10:30:52