- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
High-Temperature Analysis of GaN-based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
摘要： The InGaN/GaN MQW structure is demonstrated as a possible solution for high-temperature photodiode applications. High temperature spectral and noise analysis of InGaN/GaN MQW structure are performed for the potential integration as a detector in future power electronics applications. The spectral response was measured under photovoltaic and bias modes for the temperature range of 77 - 800 K. A peak spectral responsivity of 27.0 mA/W at 440 nm at 500 K is recorded. The peak external quantum efficiency of the device was calculated to be in the range of 5 - 8 % in the temperature range 77 - 800 K. The photodetector sensitivity of the structure is quantified using the material figure of merit parameter, D* for different temperature and biased voltages. A peak detectivity of 4 x 108 cmHz1/2W-1 is observed at 800 K with zero bias at 440 nm.
关键词： quantum well devices,power electronics,High-temperature,photodiode,optocouplers
更新于2025-09-16 10:30:52
-
Influence of Process Parameters in Laser Piercing
摘要： This work addresses the analysis of the in?uence of process parameters in laser piercing for mild steel, stainless steel, and aluminum thick sheets, carried out by the monitorization of the signal with a photodiode installed coaxially in the cutting head. The sensor captures the infrared or visible signal emitted during the piercing. The relationship between the intensity of the signal and the parameter values was analyzed, distinguishing between soft and fast piercings. The results permit the optimization of the piercing strategy with a reduction of 25% in time and the possibility of establishing a threshold to control the piercing process. This study reveals the importance of knowing parameter dependencies with the process results and highlights the potential of monitorization systems in laser cutting to improve the piercing duration and avoid wasting time during production.
关键词： laser piercing,piercing time,monitoring,laser cutting,photodiode
更新于2025-09-16 10:30:52
-
[IEEE 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2019.11.25-2019.11.27)] 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Applying LEDs as Therapeutic Light Sources for Anti-microbial Treatment: An Experimental Study
摘要： A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词： Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-16 10:30:52
-
Photodetectors [Working Title] || Avalanche Photodiode Focal Plane Arrays and Their Application to Laser Detection and Ranging
摘要： Focal-plane avalanche photodiodes (APDs) are being more and more widely and deeply studied to satisfy the requirement in weak light and single photon imaging. The progresses of this worldwide study, especially the distinctive researches and achievements in Southwest Institute of Technical Physics and University of Electronic Science and Technology of China are reviewed in this chapter. We successfully fabricated up to 64 × 1 linear-mode Si APD arrays, and 32 × 32–64 × 64 Si single-photon avalanche detector (SPAD) arrays, and applied them in Laser Detection and Ranging (LADAR) platforms like driverless vehicles. Also, we developed 32 × 32–64 × 64 InGaAsP/InP SPAD arrays, and constructed three-dimensional imaging LADAR using them. Together with the progresses of other groups and other materials, we see a prospective future for the development and application of focal-plane APDs.
关键词： avalanche photodiode,focus plane,laser detection and ranging
更新于2025-09-16 10:30:52
-
Optical Fiber Communications (Principles and Applications) || Optical Receivers
摘要： The purpose of a receiver in an electronic communication system is to extract the information sent by the corresponding transmitter with as minimum a carrier power level as possible. The primary function of an optical receiver in an optical fiber communication link is to convert the received optical signal into an equivalent electrical signal and recover the data. One of the main components of an optical receiver is a photodetector that converts incident optical signals into electric signals using photoelectric effects. High Sensitivity, dynamic range, fast response (i.e., acquisition time), high reliability, low noise, compatible size with that of fiber, and low cost are some of the important requirements of a photodetector. These requirements are best met by semiconductor photodetectors that convert an optical signal transmitted via optical fiber cables to equivalent electrical signals for further processing to achieve the desired output. The type of photodetectors suitable for three optical spectrum ranges of 800–900 nm, 900–1100 nm, and 1100–1600 nm vary in the material used for their fabrication as well as assembly techniques. A p–i–n photodiode is an ideal semiconductor photodetector device, because it can provide high quantum efficiency, fast response and capability to operate at higher modulation frequencies. The minimum received optical power that can be detected by a photodetector is limited by noise. A fully integrated single beam optical receiver comprises of a semiconductor photodiode, preamplifier in the electric domain, digital logic circuits, and an off-chip electronic driver circuit. This chapter discusses all the important aspects of photodetectors and optical receivers. The discussion begins with basic concepts behind the photo detection process, followed by description of different types of photodetectors usually used by optical receivers. Next, the components used in an optical receiver unit are explained. Finally, different types of noise sources in optical receivers that limit the signal-to-noise ratio, the receiver sensitivity parameter and its degradation are covered in sufficient detail.
关键词： Semiconductor Photodetectors,Noise Performance,Quantum Efficiency,Photodetectors,Avalanche Photodiode (APD),p–i–n Photodiode,Receiver Sensitivity,Responsivity,Optical Receivers
更新于2025-09-12 10:27:22
-
The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the APD with GaN/AlN Periodically‐Stacked‐STRUCTURE
摘要： Inductively Coupled Plasma (ICP) is widely used in dry etching of III-nitride materials, wherein the etching parameters of GaN and AlN are very different. In this paper, the ICP dry etching process parameters of GaN/AlN periodically-stacked-structure (PSS) for avalanche photodiode fabrication have been intensively studied and optimized. The flow rate ratio of Cl2/BCl3/Ar plasma, bias voltage, and the GaN-to-SiNx selectivity of ICP etching were optimized to achieve excellent surface morphology and nearly vertical sidewalls. It was found that the etching rate and the etched surface roughness of GaN/AlN material were significantly influenced by the flow rate of Cl2. After optimizing the etching procedure, the root-mean-square roughness (RMS) of the etched surface was measured to be 1.46 nm, which is close to the as grown surface. By employing the optimized ICP dry etching in the fabrication of the GaN/AlN PSS avalanche photodiode (APD), the dark current was suppressed from 3.6 A/cm2 to 8.2×10-3 A/cm2 at -90 V.
关键词： GaN/AlN,dark current,molecular beam epitaxy,inductively coupled plasma,avalanche photodiode
更新于2025-09-12 10:27:22
-
Influence of PEIE interlayer on detectivity of red-light sensitive organic non-fullerene photodetectors with reverse structure
摘要： In this work we analyse an influence of 80 % ethoxylated polyethyleneimine (PEIE) interlayer modifying the ITO electrode work function on the detectivity and time response of the red-light sensitive photodetectors based on donor-acceptor copolymer HFQx-T (where HFQx stands for hexafluoroquinoxaline acceptor units, and T for benzodithiophene derivative donor blocks) blended with acceptor ITIC (with indacenodithieno[3,2-b]thiophene as central donor unit and 2-(3-oxo-2,3-dihydroinden-1-ylidene) malononitrile as acceptor end groups). Modification of ITO electrode by PEIE interlayer allows to construct the photodiode with reversed structure which results in low dark current and high detectivity of the photodetector. The 3.5 nanometres thick PEIE interlayer causes strong reduction of the dark current in comparison to the dark current measured in classical photodiode structure; this allowed to obtain remarkably high detectivity, exceeding 2×1013 Jones. However, a presence of the PEIE interlayer has significantly lengthen the photodiode time response. We demonstrate that when designing the photodiodes with reversed structure, one should consider compromise between the required detectivity and the time response of the photodetector.
关键词： organic photodiode with reverse structure,ethoxylated polyethyleneimine,photodetector detectivity,photodetector time response,PEIE,organic photodetector
更新于2025-09-12 10:27:22
-
[IEEE 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Sao Paulo, Brazil (2019.8.26-2019.8.30)] 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Multi-layers Lateral SOI PIN Photodiodes for Solar Cells Applications
摘要： In this paper, a lateral PIN photodiode based on a SOI wafer has been studied through numerical simulations. This device can be used as a solar cell embedded in a CMOS circuit in order to propose autonomous ultralow-power circuits (ULP). Efficiency behavior has been analyzed for different semiconductor materials and configurations in order to reach the best performance. The results indicate that a layer with a different semiconductor, with different characteristics such as forbidden band, mobility and light absorption, improves the generated power in the device, suggesting that the cell can feed circuits that need larger power.
关键词： PIN photodiode,Solar cells,Multi-layer,Germanium
更新于2025-09-12 10:27:22
-
A study on change point detection methods applied to beam offset detection in laser welding
摘要： This paper presents an experimental study where a photodiode integrated into a laser beam welding tool is used to monitor laser beam spot deviations from the joint, the beam offset. The photodiode system is cost effective and typically easy to implement in an industrial system. The selected photodiode is a silicon detector sensitive in the spectral range between 340-600 nm which corresponds to the spectral emissions from the plasma plume. The welding application is closed-square-butt joint welding where a laser beam offset can cause lack of fusion in the resulting weld. The photodiode signal has been evaluated by two different change point detection methods, one off-line and one on-line method, with respect to their detection performance. Off-line methods can be used to guide post weld inspection and on-line methods have the potential to enable on-line adaptive control or the possibility to stop the process for repair. The performance of the monitoring system and the change point detection methods have been evaluated from data obtained during laser beam welding experiments conducted on plates of stainless steel. The results clearly indicates the possibility to detect beam offsets by photodiode monitoring.
关键词： change point detection,monitoring,photodiode,Laser beam welding
更新于2025-09-12 10:27:22
-
Simulations of Nanoscale Room-Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon-Photonic Sensing and Quantum Applications
摘要： Photonic qubits can represent an ideal choice in quantum-information science since photons travel at the speed of light and interact weakly with the environment over long distances. In this context, technological platforms allowing the development and implementation of chip-scale integrated-photonics represent a possible solution towards scalable quantum networking schemes. However, at present, most examples of integrated quantum photonics still require the coupling of light to external photodetectors operating at very low temperatures. In this paper, we demonstrate that the GeSn/Si-in-SOI technological platform can be a good candidate to realize integrated single-photon avalanche detectors (SPADs), operating at room temperature. Thus, we report the design and simulation of waveguide-based SPADs for operation at 1550 nm and 2000 nm wavelengths. We calculate the breakdown voltage, the dark count rate (DCR), the single photon detection efficiency (SPDE), the noise equivalent power (NEP), the dark count and the afterpulsing probabilities by simulating the avalanche process and the statistical features in a self-consistent way. The PIPIN SPAD performance parameters are estimated as a function of the GeSn’s threading dislocation density and of the temperature. We also demonstrate that for operation at 1550 nm and 2000 nm wavelengths with the 220-nm GeSn separate-absorber film centered in the 250-nm-high Si waveguide end, it is possible cover a number of applications at room or near room temperature, ranging from ultra-sensitive LIDAR to quantum communications, metrology, sensing and key distribution.
关键词： Optoelectronic and Photonic device,Photonic integrated circuits,Silicon Photonics,Photodetector,Avalanche photodiode
更新于2025-09-12 10:27:22