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Facile synthesis of three-dimensional ZnO hierarchical microspheres composed of well-ordered nanorods by hydrothermal method
摘要： Three-dimensional (3D) ZnO hierarchical microspheres composed of well-ordered nanorods were synthesized by a facile one-step hydrothermal method without any surfactants. The effects of reaction conditions including reaction temperature, reaction time on the microstructure of hierarchical microspheres were investigated. The results demonstrated that the reaction conditions played an important role in the morphology of 3D ZnO hierarchical microspheres. A three-stage reaction mechanism of 3D ZnO hierarchical microspheres was proposed. Firstly, Zn2+ reacts with OH- and NH4+ to produce nanoparticles. Then the nanoparticles are self-assembled into nucleis. Finally is the formation and growth of the hierarchical structure on the nuclear surface. When the as-synthesized ZnO were used as the anode of the dye sensitization solar cells (DSSCs), the 3D ZnO hierarchical microspheres composed of well-ordered nanorods exhibits the best photoelectric properties, which was attributed to the increased surface area and advantageous electronic transmission path.
关键词： photoelectric properties,Hierarchical microspheres,conditions,mechanism
更新于2025-09-23 15:23:52
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Synthesis and Photophysical Properties of Multichromic Nanocrystals of Polymethine Dyes
摘要： A unique method for the self-assembly of multilayer multichromic molecular crystals from three various polymethine dyes absorbing light in the broad spectral range has been developed. This method is based on the formation of an anionic platform of J-aggregates of magnesium complexes of thiamonomethinecyanines in an aqueous solution followed by the matrix synthesis of J-aggregates of two cationic trimethinecyanines on the surface of the platform. Spectral, luminescent, and photoelectric properties of the multichromic crystals of dyes have been studied. It has been shown that each multichromic organic crystal is a multilayer photoelement which possesses photoconductivity in three maxima of exciton absorption in the blue, green, and red spectral ranges with efficiency from 2.7 to 6.1%. The results form the basis for the technological development of high-organized molecular structures possessing unique optical and photoelectric properties with the aim of applying them in organic and hybrid organic/inorganic photonics and optoelectronics, including in the form of thin-film photoconverters in broad spectral ranges.
关键词： multichromic nanocrystals,polymethine dyes,nanophotonics,photoelectric properties,J-aggregates
更新于2025-09-23 15:21:21
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Improved Photoelectric Properties of ZnO<sub>1-x</sub>/Graphene Heterostructures
摘要： In this work, the photoelectric properties of ZnO1-x/graphene heterostructures were investigated. Such ZnO1-x/graphene heterostructures were constructed from non-stoichiometric zinc oxide (ZnO1-x) film and graphene by first depositing ZnO1-x layer through radio frequency magnetron sputtering onto silicon wafers with SiO2 layer and then transferring graphene via a wet method. It was revealed that such heterostructures could have improved photoelectric properties. Compared with ZnO1-x films, the absorbance of the ZnO1-x/graphene heterostructures in visible and near-infrared region was enhanced; and due to the high conductivity of graphene, the photocurrent was significantly enhanced both in dark and under irradiation of a 700 nm light. By calculating the absolute current gain, it was revealed that the fabricated ZnO1-x/graphene heterostructures would have a higher current gain. Thus, such ZnO1-x/graphene heterostructures would be promisingly applied in visible light to near-infrared detection devices.
关键词： Thin film,Zinc oxide,Photoelectric properties,Device,Graphene
更新于2025-09-23 15:21:01
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Enhanced performance and stability of ambient-processed CH3NH3PbIx(SCN)3-x planar perovskite solar cells by introducing ammonium salts
摘要： Metal halide perovskite solar cells have drawn a lot of attention due to their excellent photovoltaic properties. However, a simple method to prepare perovskite films with high quality in ambient air remains a big challenge, which has become an obstacle for the commercialization of PSCs. Here we propose a facile method to prepare efficient CH3NH3PbIx(SCN)3-x-based planar PSCs in ambient conditions and ammonium salt (NH4Cl, NH4SCN) are used to regulate the microstructure of CH3NH3PbIx(SCN)3-x perovskite film prepared in ambient air. At the optimal concentration, the devices with NH4Cl or NH4SCN additives achieve the champion efficiency of 14.71% and 16.61% respectively, which are much higher than the 12.97% of the reference device. The stability of the unsealed devices with additives in ambient air has also been significantly improved. The modified devices without any encapsulation still retain about 80% of initial efficiency after 30 days in ambient air. The conductive atomic force microscopy and photoluminescence measurement are used to characterize photoelectric properties of perovskite film. The trap-state density and charge recombination of the devices have been investigated. The results suggest that the improved photovoltaic characteristics and stability may be attributed to the improved quality of perovskite films, the reduced trap-states and the suppressed charge recombination.
关键词： ammonium salt additives,air-process,CH3NH3PbIx(SCN)3-x,photoelectric properties
更新于2025-09-23 15:19:57
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Room-temperature processed ZrO2 interlayer towards efficient planar perovskite solar cells
摘要： The Sn-doped In2O3 transparent conductive (ITO) electrode in planar perovskite solar cells (PSCs) is modified by zirconia (ZrO2) interlayer with low-temperature process. Here the ZrO2 film is prepared by ultraviolet (UV) treatment at room temperature. The effects of the inserted ZrO2 interlayer on the performance of CH3NH3PbI3-xClx-based PSCs have been systemically studied. After optimizing the process, the champion efficiency of PSC with UV-treated ZrO2 interlayer is 19.48%, which is larger than that of the reference PSC (15.56%). The improved performance in the modified devices is primarily ascribed to the reduced trap states and the suppressed carrier recombination at the ITO/SnO2 interface. Our work provides a facile route to boost the photovoltaic performance of PSCs by modifying the surface of transparent conductive electrode at room temperature.
关键词： Photoelectric properties,ITO/SnO2 interface modification,Ultraviolet (UV) treatment,Planar perovskite solar cell,Room-temperature processed ZrO2 interlayer
更新于2025-09-19 17:13:59
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Synthesis of Zn0?·1Cd0?·9S heterostructure with N-doped graphene quantum dots and graphene for enhancing photoelectric performance in UVa??visible light
摘要： In the present study, a heterostructure based on Zn0·1Cd0·9S, N-doped graphene quantum dots (N-GQDs), and graphene was successfully prepared by a simple method. Various analyses are conducted to determine the structure, morphology, and materials performance of the synthesized composite. The results exhibit that the Zn0·1Cd0·9S/N-GQDs/graphene heterostructure presents excellent photoelectric performance with a high photocurrent of 4.43 × 10?5 A/cm2 and 3.43 × 10?5 A/cm2 under light irradiation of 365 nm and 405 nm, respectively. It demonstrates a two-fold photocurrent enhancement in comparison to blank Zn0·1Cd0.9S. This remarkable improvement is ascribed to a mechanism in which the N-GQDs act as photosensitizers, enhancing the absorption ability. Concurrently, graphene serves as a carrier mobility substrate, facilitating the separation of the photogenerated electron–hole pairs. The synergetic effect between Zn0·1Cd0·9S, the N-GQDs, and graphene enhances the photoelectric performance. The Zn0·1Cd0·9S/N-GQDs/graphene heterostructure provides a new route for the enhancement of the photoelectric performance of a semiconductor under UV–visible light.
关键词： Graphene,N-GQDs,Photoelectric properties,Zn0.1Cd0·9S
更新于2025-09-19 17:13:59
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Preparation of highly transparent conductive aluminum-doped zinc oxide thin films using a low-temperature aqueous solution process for thin-film solar cells applications
摘要： In this work, we developed a facile route to fabricate highly transparent conductive AZO thin films by using an aqueous solution process followed by an ultraviolet (UV) exposure technique at an annealing temperature as low as 200 °C, where the aluminum citrate complex was used as the Al doping source. Various of deposition parameters in the AZO thin films fabrication process were studied and optimized. The mechanisms on UV exposure and heat treatment to the conductivity improvement and conductivity stability of the AZO films were analysed. Results showed that the AZO thin films under the best parameters conditions demonstrated an optical transmittance higher than 85% in the visible spectra region and a lowest electrical resistivity of 4.8 × 10?3 Ω cm, while exhibited densely oriented columnar grains and uniform surface morphology as well as uniform composition distribution. The UV exposure could remove carbon species from the surface of the AZO thin films to reduce oxygen-related defects and release free carriers at the boundaries and interfaces, thereby improving the conductivity of the AZO thin films. The simultaneous treatment of the AZO thin film by ultraviolet exposure and heat treatment could remove carbon species at a deeper thickness, thereby improving the conductive stability of the AZO thin films. Kesterite Cu2ZnSnS4 thin film solar cells incorporating the optimal AZO thin films as top electrodes demonstrated a best power conversion efficiency (PCE) of 7.15%, which was comparable to the PCE value obtained by using the sputtering deposited AZO thin films as top electrodes.
关键词： AZO thin films,Aqueous solution process,Photoelectric properties,Ultraviolet exposure,Cu2ZnSnS4 thin film solar cells
更新于2025-09-16 10:30:52
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Nitrogen-doped graphene quantum dots decorated ZnxCd1-xS semiconductor with tunable photoelectric properties
摘要： In this study, ZnxCd1-xS/N-GQDs composites with different Zn/Cd ratios were synthesized via a facile solvothermal process. A series of techniques were introduced to investigate the effect of Zn/Cd ratios and N-GQDs on the performances of ZnxCd1-xS/N-GQDs. The results show that the crystal structure and photoelectric performance of the composites can be tuned via adjusting the Zn/Cd ratios. ZnxCd1-xS/N-GQDs composites transform from a hexagonal structure to a cubic structure with the increase of Zn content, and the diffraction peaks are located between hexagonal phase CdS and cubic phase ZnS. Meanwhile, the photocurrent responses and electrochemical impedance present good tunability via adjusting the Zn/Cd ratios. Zn0.9Cd0.1S/N-GQDs composites with the higher photocurrent value of (cid:1)2 and lower interfacial impedance are superior to ZnxCd1-xS/N-GQDs composites with other 3.79 mA cm Zn/Cd ratios. Moreover, the introduction of N-GQDs obviously enhances the photoelectric properties of the semiconductor.
关键词： Composites,N-GQDs,Photoelectric properties,ZnxCd1-xS
更新于2025-09-12 10:27:22
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Effect of Different Bonding Materials on Flip-Chip LED Filament Properties
摘要： This article researches the effect of Sn-based solder alloys on flip-chip light-emitting diode LED (FC-LED) filament properties. SEM images, shearing force, steady-state voltage, blue light luminous flux, and junction temperature were examined to demonstrate the difference between two types of FC-LED filaments welded with two solders. The microstructure surface of Sn90Sb10 filament solder joints was smoother and had fewer voids and cracks compared with that of SAC0307 filament solder joints, which indicates that the Sn90Sb10 filaments had a higher shearing force than the SAC0307 filaments; moreover, the average shearing force was beyond 200 gf (standard shearing force). The steady-state voltage and junction temperature of the Sn90Sb10 solder-welded FC-LED filament were lower, and the Sn90Sb10 filament had a relatively higher blue light luminous flux. If high reliability of the solder joints and better photoelectric properties of the filaments are required, this Sn90Sb10 solder is the best bonding material for FC-LED filament welding.
关键词： reliability,lead-free solder,photoelectric properties,FC-LED filament
更新于2025-09-12 10:27:22
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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
摘要： To serve as an electron transport layer (ETL) or a buffer layer for the third-generation solar cells, a compact and uniform gallium nitride (GaN) thin layer with suitable energy level is needed. Meanwhile, it is also meaningful to explore its low-temperature deposition especially on transparent electrodes. In this work, GaN thin films have been deposited on fluorine-doped tin oxide (FTO) glass substrate for the first time by plasma-enhanced atomic layer deposition (PEALD) technology. 280-300°C is identified as the optimized deposition temperature for forming a compact and uniform n-type GaN layer on FTO substrate. The 50-200 PEALD cycles of GaN layers show an amorphous structure, and their bandgap values ranging from 3.95 eV to 3.58 eV have been displayed. Interestingly, as the GaN thickness increases, Fermi level moves upward obviously along with a reduction of conduction band minimum (CBM) value as well as an increase of valance band maximum (VBM) value. The thickness-dependent band structure is preliminarily explained as the relaxation of compressive stress and increased carrier concentration for a thicker GaN layer. The above situation enables us to regulate the energy level of GaN layer via thickness control, and thus accelerates its future application in new generation solar cells.
关键词： photoelectric properties,FTO glass substrate,GaN thin film,plasma-enhanced atomic layer deposition
更新于2025-09-12 10:27:22