Effect of (102) Diffracted Peak on Magnetic, Photoelectric, and Adhesive Characteristics of Fe <sub/>2</sub> Si Films

摘要： Fe2Si films with thicknesses from 100 nm to 600 nm underwent the following processes; (a) as-deposited films were maintained at room temperature (RT); (b) deposited films were post-annealed at 150 °C for 1 h, and (c) deposited films were post-annealed at a treatment temperature of 250 °C for 1 h. The X-ray diffraction (XRD) patterns of Fe2Si included significant (102) and (200) diffractions with corresponding peaks at 2θ are 44° and 53°, respectively. The (102) diffracted intensity and grain size of thicker and post-annealed Fe2Si thin films exceeded those of thinner and as-deposited Fe2Si thin films. The Fe2Si (102) peak revealed magneto-crystalline anisotropy, which reduced electrical resistivity and was associated with the highest low-frequency alternative-current (ac) magnetic susceptibility (χac). The maximum value of χac was reached at a thickness of 600 nm at the optimal frequency (fres) of 10 Hz, which generated maximized spin sensitivity. The resistivity (ρ) declined as the Fe2Si thickness and post-annealing temperature increased, because grain boundaries and the thin-film surface scattered the electrons. The 600 nm-thick Fe2Si thin film that was post-annealed at 250 °C had the lowest ρ of around 2.1 × 10^4 μΩ·cm. The as-deposited Fe2Si thin film with a thickness of 100 nm had the highest transmittance of approximately 48%. The maximum transmittance decreased slightly as the thickness increased and upon post-annealing. The surface energy of the as-deposited Fe2Si films exceeded those of post-annealed films, revealing that the adhesion of as-deposited Fe2Si films was stronger than that of post-annealed films owing to the degree of crystallinity.