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Cooligomers of 1,1-Diethyl- or Diisopropyl-2,5-Dibromo-3,4-Diphenyl-Siloles with Dichlorodisubstituted-Germanes and Their Characteristics
摘要： Silole or silacyclopentadiene is a silacyclic 5-membered diene compound1 that has a low-lying π-electronic lowest unoccupied molecular orbital energy value in comparison with its analogue cyclopentadiene.2 This is ascribed to the orbital interactions between the silylene σ* and butadiene π* orbitals.3 Silole-containing materials with π-conjugated electronic systems have been intensively studied as electronic materials for OLEDs,4 photoluminescence,5–7 and electroluminescence applications.8–10 For example, end-capped 2,5-silole dendrimeric compounds such as phenyl-ethenyl-carbosilanes are examples of green or greenish-blue fluorescence emitting materials for electroluminescent devices.11 We have previously reported the preparation of poly(1,1-disubstituted-3,4-diphenyl-2,5-silole)s by the Grignard methathesis of 1,1-disubstituted-2,5-dibromo-3,4-diphenylsiloles.13 We also prepared poly(carbosilane) oligomers containing silacyclopenta-2,5-dienylene and silylene groups, i.e., poly[(1,1-dihexyl-3,4-diphenyl-1-silacyclopenta-2,5-dienylene)-co-(disubstituted-silylene)]s.14–16 Herein, we report the synthesis of new cooligomers containing both 2,5-silolene and germylene groups, namely, poly[(1,1-diethyl- or diisopropyl-3,4-diphenyl-2,5-silolene)-co-(disubstituted-germylene)]s (6a–6d), and their characteristic photoelectronic and thermal properties.
关键词： Silacyclopentadiene,Disubstituted germylene,Cooligomerization,Silole,Photoelectronic properties
更新于2025-09-23 15:22:29
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Vapor-deposited all inorganic CsPbBr3 thin films and interface modification with C8-BTBT for high performance photodetector
摘要： All inorganic perovskites like CsPbBr3 have attracted rising attention and are considered as promising candidates for optoelectronic devices. Here we fabricated CsPbBr3 films by co-evaporation. The as-deposited and low temperature (below 300 °C) annealed films are in a mixture phase of CsPbBr3 and CsPb2Br5. After 400 °C annealing in ambient air, the CsPbBr3 phase becomes dominant with a good crystal structure and less defects. Then, 2,7-diocty[1]benzothieno-[3,2-b]benzothiophen (C8-BTBT) was deposited on the CsPbBr3 film layer-by-layer to investigate the interface electronic structure with X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). As C8-BTBT was deposited, p-doping effect was observed at the surface of CsPbBr3 by the interface energy level alignment. At the same time, we also observed a chemical reaction at the interface and a small amount of lead sulfite might be formed. CsPbBr3 based photodetectors with or without C8-BTBT modified layer were also fabricated and studied. It was found that the photocurrent of the detectors with an additional C8-BTBT layer was about two orders of magnitude higher than that without C8-BTBT layer. The responsivities and response time are also improved with C8-BTBT. We attribute the improvement of photoelectronic properties to the interface energy level adjustment by the C8-BTBT. These results highlight the potential of C8-BTBT as a modified layer for inorganic perovskite optoelectronic devices.
关键词： CsPbBr3 films,C8-BTBT,Interfacial electronic structures,Vacuum evaporation,Photoelectronic properties
更新于2025-09-23 15:21:01