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Improved stability of silver nanowire (AgNW) electrode for high temperature applications using selective photoresist passivation
摘要： Metal nanostructure arrays have been progressed as an alternative to the conventional oxides-based transparent conductive electrodes. Herein, we demonstrate the improved reliability of silver nanowire (AgNW) electrodes by photoresist encapsulation. The incorporation of photoresist followed by photolithography is beneficial to selectively pattern the AgNWs on poly[ether sulfone]. By varying the development or removal time of the ultraviolet (UV)-exposed photoresist, the properties of the AgNWs in the electrode are significantly varied. The optical parameters such as transmittance, haziness, and the yellow index of the electrodes have been extensively studied to reveal the advantage of the selective photoresist patterning. The AgNW electrodes patterned under 120 s of development time explored superior optical and electrical properties with high durability. The electrical properties of the AgNW electrodes at high temperatures (250 °C) demonstrate the photoresist-induced stability as compared to bare samples. Further, the morphological examination after the high temperature treatment reveals the reduced Rayleigh instability effects in 120s developed AgNWs that facilitate the reliability under harsh conditions.
关键词： photoresist selective passivation,development time,high reliability,Silver nanowire (AgNW) electrode
更新于2025-09-23 15:23:52
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17.3: Black Photoresist Achieving Patterns with Extremely Low Reflection and Smooth Line Edge
摘要： This paper introduces a new type of black photoresist with a very low reflectance and very smooth pattern line edge that doesn't require adding micron-size particles. Combinations of poor solvent, good solvent, and selected special substances as solutes in the black photoresist can achieve matte surface during drying process. Because particles are not used to achieve matte surface, the line edge will be very smooth. This photoresist is likely appropriate for applications where light reflection or light scattering should be avoided, such as black matrix and smartphone camera surroundings.
关键词： black matrix,low reflective index,smart phone camera,matte surface,Black photoresist,line edge roughness
更新于2025-09-23 15:23:52
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Removal of Polymers for KrF and ArF Photoresist Using Hydrogen Radicals Containing a Small Amount of Oxidizing Radicals
摘要： Photoresist removal method using hydrogen radicals, which are produced on a tungsten hot-wire catalyst, is effective to resolve some environmental and industrial problems in conventional methods for the fabrication of electronic devices. However, its removal rate is not as good as that of the conventional ones. We have previously described that the removal rate of a positive-tone novolac photoresist is enhanced by the addition of a small amount of oxygen gas to the atmosphere, in which hydrogen radicals are produced. Oxidizing radicals, such as OH and O radicals, can be produced together with H radicals. In present study, we examined the effects of oxygen addition on base polymers of KrF and ArF photoresists: the former is poly(vinyl phenol) (PVP), and the latter is poly(methyl methacrylate) (PMMA). Effects of oxygen addition on PVP was confirmed, as was found for the novolac photoresist. On the other hand, the effects on PMMA were different from the cases of the novolac photoresist and PVP. Results were ascribed to the presence or absence of benzene rings, the properties of polymers and the reactivity of oxidizing radicals.
关键词： Oxygen addition,Environment,Removal,Photoresist,Hydrogen radical
更新于2025-09-23 15:23:52
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Effect of Oxygen on Thermal and Radiation Induced Chemistries in a Model Organotin Photoresist
摘要： Organotin photoresists have shown promise for next generation lithography due to their high extreme ultraviolet (EUV) absorption cross sections, their radiation sensitive chemistries, and their ability to enable high-resolution patterning. To better understand both temperature and radiation induced reaction mechanisms, we have studied a model EUV photoresist, which consists of a charge-neutral butyl-tin cluster. Temperature programmed desorption (TPD) showed very little outgassing of the butyl-tin resist in ultrahigh vacuum, and excellent thermal stability of the butyl groups. TPD results indicated that decomposition of the butyl-tin resist was first order with a fairly constant decomposition energy between 2.4 and 3.0 eV, which was determined by butyl group desorption. Electron stimulated desorption (ESD) showed that butyl groups were the primary decomposition product for electron kinetic energies expected during EUV exposures. XPS was performed before and after low energy electron exposure to evaluate the compositional and chemical changes in the butyl-tin resists after interaction with radiation. The effect of molecular oxygen during ESD experiments was evaluated and it was found to enhance butyl group desorption during exposure, and resulted in a significant increase in the ESD cross section by over 20%. These results provide mechanistic information that can be applied to organotin EUV photoresists, where a significant increase in photoresist sensitivity may be obtained by varying the ambient conditions during EUV exposures.
关键词： X-ray photoelectron spectroscopy,electron stimulated desorption,Extreme ultraviolet lithography,organotin photoresist,temperature programmed desorption
更新于2025-09-23 15:23:52
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Evaluation of replicas manufactured in a 3D-printed nanoimprint unit
摘要： Nanoimprint lithography has become a useful tool to prepare elements containing nanoscale features at quite reasonable cost, especially if the fabrication elements are created in the own laboratory. We have designed and fabricated a whole nanoimprint manufacturing system and analyzed the resulting surfaces using ad hoc packages developed on an open-software AFM image analysis suite. To complete the work, a number of polymers have been thoroughly studied in order to select the best material for this implementation. It turned out that the best alternative was not always the same, but depended on the application. A comparative study of the polymers, which takes into account the values and dispersion of numerous sample parameters, has been carried out. As a large number of samples was prepared, an automatized procedure for characterization of nanoimprint surfaces had to be set up. The procedure includes figures of merit for comparative purposes. Materials without the requirement of a solvent were found to be superior for most nanoimprint applications. A large dispersion of the samples was found.
关键词： oriented gradient,nanoimprint,polymer,replica,photoresist
更新于2025-09-23 15:22:29
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Backbone Degradable Poly(aryl acetal) Photoresist Polymers: Synthesis, Acid Sensitivity, and Extreme Ultraviolet Lithography Performance
摘要： A new class of acid labile poly(aryl acetal) polymers has been developed that can be used in photoresist formulations for next-generation microlithography techniques including extreme ultraviolet (EUV) or electron beam lithography. Example polymers have been synthesized by an optimized Suzuki polycondensation protocol. They are soluble in common photoresist solvents but are insoluble in water or aqueous bases that are used to develop positive photoresists. The structural design includes further elements that are aimed at improving photoresist resolution, stability, and etch resistance. Upon acid exposure, the acetal linkages are cleaved, and the polymers degrade into phenolic terphenyl fragments, which are readily soluble in a photoresist developer. Polymer degradation has been studied by NMR and LC-MS. Lithographic formulations have been developed and tested in line-and-space patterning experiments using EUV photolithography. Optimized resist formulations achieved 22 nm resolution with line width roughness values of 5.7 nm.
关键词： poly(aryl acetal),resolution,EUV lithography,acid degradation,photoresist,line width roughness,Suzuki polycondensation
更新于2025-09-23 15:22:29
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Contact Engineering for Dual-Gate MoS <sub/>2</sub> Transistors Using O <sub/>2</sub> Plasma Exposure
摘要： The benefits of O2 plasma exposure at the contact regions of dual-gate MoS2 transistors prior to metal deposition for high performance electron contacts is studied and evaluated. Comparisons between devices with and without the exposure demonstrate significant improvements due to the formation of a high-quality contact interface with low electron Schottky barrier (~0.1 eV). Topographical and interfacial characterization are used to study the contact formation on MoS2 from the initial exfoliated surface through the photolithography process and Ti deposition. Fermi level pinning near the conduction band is shown to take place after photoresist development leaves residue on the MoS2 surface. After O2 plasma exposure and subsequent Ti deposition, Ti scavenges oxygen from MoOx and forms TiOx. Electrical characterization results indicate that photoresist residue and other contaminants present after development can significantly impact electrical performance. Without O2 plasma exposure at the contacts, output characteristics of MoS2 FETs demonstrate non-linear, Schottky-like contact behavior compared to the linearity observed for contacts with exposure. O2 plasma allows for the removal of the residue present at the surface of MoS2 without the use of a high temperature anneal. A low conduction band offset and superior carrier injection are engineered by employing the reactive metal Ti as the contact to deliberately form TiO2. Dual-gate MoS2 transistors with O2 plasma exposure at the contacts demonstrate linear output characteristics, lower contact resistance (~20× reduction), and higher field effect mobility (~15× increase) compared to those without the treatment. In addition, these results indicate that device fabrication process induced effects cannot be ignored during the formation of contacts on MoS2 and other 2D materials.
关键词： TiO2,MoS2,contact resistance,O2 plasma,photoresist residue,MOSFETs,contacts
更新于2025-09-23 15:22:29
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Oxime Type Photoacid Generators Having Adamantyl and Superstrong Acid Precursor Group
摘要： Oxime derivatives, having a N-O bond in the molecule structure, are excellent photo-reactive compounds. Oxime type photoacid generators (PAGs) with adamantyl and perfluoroalkylsulfonyloxy groups and without aromatic groups were prepared, and their absorption spectra and thermal properties were measured. The compounds designed with photoacid generator in deep ultraviolet (DUV) region have good transparency in the region. The thermal stability of these PAGs depended on the chain length of acid precursor groups. The quantum yields of acid generation were substantially high. These aliphatic oxime sulfonates can be expected to be PAGs in DUV.
关键词： Superstrong acid,Adamantane,Oxime ester,Photo-acid generator,Chemically amplified photoresist
更新于2025-09-23 15:22:29
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Polarization Dependence in the Carbon K-edge Photofragmentation of MAPDST Photoresist: an Experimental and Theoretical Study
摘要： The use of tunable soft X-rays from synchrotron radiation (SR) opens the possibility of inducing selective chemical bond scission due to its high localization in a chemical bond. The selective fragmentation of a potential extreme ultraviolet (EUV) resist, poly(4-(methacryloyloxy) phenyldimethylsulfoniumtriflate (MAPDST), was examined using inner shell polarized SR excitation. Selective bond dissociation processes were studied using a combination of carbon K-edge excitation, angle-resolved irradiation, and NEXAFS spectroscopy. Detailed theoretical calculations carried out with the FEFF9 modeling program allowed the interpretation of all the observed experimental features. NEXAFS results indicated that the aromatic group of the polymer lies parallel to the substrate surface. FEFF9 theoretical calculations confirmed the origin of the splitting of the main C 1s →π*C=C resonances observed. The transition C1s → πα*C=C (285.3 eV) can be associated with the four internal carbons of the aromatic ring. The transition C1s → πβ*C=C (286.9 eV) was assigned to the carbon atoms attached to the oxygen and sulfur atoms. According to the theoretical calculations, the origin of the splitting is due to the different absolute energy of C1s. The results showed a strong selective dissociation effect when the excitation energy was tuned to C1s → πα*C=C transition and the electric field vector of the photon was perpendicular to the substrate plane (grazing angle). On the contrary, other transitions were in general less affected. When the SR irradiation angle changed from grazing to normal incidence, the intensity of the C1s → π*C=C transitions was almost unaffected by 285.3 eV photons. The experimental results suggest that site-specific core excitation combined with the direction of the electric field vector of the incidence SR, can efficiently control the localization of the photon energy to produce selective bond dissociation in MAPDST thin films. The results presented here can also be useful to guide new processing lithographic methods for EUVL using the polarization properties of light in ordered polymeric thin films.
关键词： NEXAFS spectroscopy,FEFF9 modeling,selective bond dissociation,synchrotron radiation,polarization dependence,MAPDST photoresist
更新于2025-09-23 15:21:21
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UV-Induced Crosslinking of Poly[2-(2’-Norbornenyl)-2-Oxazoline]s
摘要： A 2-oxazoline monomer bearing a norbornenyl functionality in the side-chain was prepared from the reaction of 5-norbornene-2-carbonitrile and 2-ethanol amine. This monomer could be successfully polymerized using a 2-oxazolinium-based macroinitiator that was in-situ generated from the methyl cation-initiated oligomerization of 2-ethyl-2-oxazoline. This polymer could be subjected to polymeranalogous reactions involving the alkene groups of the norbornenyl side-chains: A proof-of-concept was established by utilizing the polymers in photoresists that were crosslinked by thiol-ene reactions involving bisfunctional thiols. Photoinitiators for the UV-induced thiol-ene reaction were required in catalytic amounts only. After development, the resists exhibited reproduction of the geometric patterns with a resolution of 30 μm.
关键词： cationic polymerization,polymer photochemistry,microwave-assisted polymerization,poly(2-oxazoline)s,photoresist,thiol-ene reaction
更新于2025-09-23 15:21:21