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Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment
摘要： TFT panel production process can be divided into three kinds of technology. There have amorphous silicon (a-Si), low-temperature polysilicon (LTPS) and amorphous IGZO (a-IGZO) oxide. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si:H as an active layer in TFT is low ?eld effect mobility (～1 cm2/V · S) (M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (～400 (cid:4)C) (M. Shur, et al., J. Appl. Phys. 66, 3371 (1989); K. khakzar and E. H. Lueder, IEEE Trans. Electron Devices IP: 146.185.205.202 On: Thu, 06 Dec 2018 10:11:54 39, 1438 (1992)). Amorphous In–Ga–Zn–O (IGZO) had attracted attention that compared with the conventional a-Si:H, in the past three years, a-IGZO thin ?lm transistors is more popular which compared with the other oxide semiconductors, because of its larger I on/I off ratio (>106(cid:2), smaller subthreshold swing (SS), better ?eld-effect mobility and better stability against electrical stress. Hydrogen plasma treatment is applied in improving a-IGZO TFTs active layer, which is fabricated by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the electrical characteristics of a-IGZO TFTs is investigated.
关键词： a-IGZO TFTs,AP-PECVD,Hydrogen Plasma Treatment,Active Layer
更新于2025-09-04 15:30:14
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Nitrogen passivation formation on Cu surface by Ar–N2 plasma for Cu-to-Cu wafer stacking application
摘要： Wafer stacking technology provides reduced interconnect delay, improved bandwidth, reduced form factor, and decreased cost. Solder-based metallic die bonding is presently utilized in high-volume manufacturing, but Cu-based metallic wafer bonding is quickly becoming a key bonding technique for next generation 3D IC and heterogeneous stacking applications. In this study, Ar–N2 plasma treatment on Cu surface was investigated to passivate Cu surface with nitrogen and to enhance the bonding quality of Cu-to-Cu wafer bonding. The Ar–N2 plasma treatment was performed by conventional DC sputtering under 5 mTorr working pressure with different Ar–N2 partial pressures. Then, the effect of Ar–N2 plasma treatment on Cu surface was evaluated structurally and electrically. It was observed that the Ar–N2 plasma treatment with high nitrogen partial pressure over a sufficient plasma treatment time provided activated Cu surface, reduction of copper oxide and chemisorbed nitrogen, and copper nitride passivation. The Ar–N2 plasma treatment of Cu surface was found to be a potential pretreatment method for Cu-to-Cu bonding.
关键词： Nitrogen passivation,3D IC,Wafer stacking,Cu-to-Cu bonding,Ar–N2 plasma treatment
更新于2025-09-04 15:30:14