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Optimizing electrospinning-hydrothermal hybrid process based on Taguchi method for modulation of point defects in ZnO micro/nano arrays towards photoelectronic application
摘要： Unlike previous work generally adopting high temperature annealing (≥500 ℃) to suppress defects in hydrothermal grown ZnO, this work suppressed ZnO defects by optimizing overall process parameters of low temperature electrospinning-hydrothermal hybrid process (≤300 ℃) with Taguchi method and Analysis of Variance (ANOVA). Sum ratio of defect peaks to eigen peaks (SRDE) in room-temperature photoluminescence (PL) spectrum was proposed to evaluate defect conditions in 27 experiments (L27 (38)). With the optimal process, good crystal quality (SRDE=0.31) was achieved at low temperature (200 ℃), of which the SRDE decreased by 68.04% compared with the initial counterpart. Then confirmation experiment was conducted to validate the selected levels, and results of signal-to-noise ratio (SNR) showed good agreement with the predicted ones. Besides, the response time and recovery time of the ZnO photodetectors with optimal process were decreased by 72.5% and 79.3%, respectively, compared with the initial ones. This method can also be used to fabricate ZnO materials with other wanted defect features.
关键词： Point defect,photodetector,ZnO micro/nano array,electrospinning-hydrothermal hybrid process,Taguchi method
更新于2025-09-09 09:28:46
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First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility
摘要： Advanced semiconductor superlattices play important roles in critical future high-tech applications such as aerospace, high-energy physics, gravitational wave detection, astronomy, and nuclear related areas. Under such extreme conditions like high irradiative environments, these semiconductor superlattices tend to generate various defects that ultimately may result in the failure of the devices. However, in the superlattice like GaAs/AlAs, the phase stability and impact on the device performance of point defects are still not clear up to date. The present calculations show that in GaAs/AlAs superlattice, the antisite defects are energetically more favorable than vacancy and interstitial defects. The AsX (X = Al or Ga) and XAs defects always induce metallicity of GaAs/AlAs superlattice, and GaAl and AlGa antisite defects have slight effects on the electronic structure. For GaAs/AlAs superlattice with the interstitial or vacancy defects, significant reduction of band gap or induced metallicity is found. Further calculations show that the interstitial and vacancy defects reduce the electron mobility significantly, while the antisite defects have relatively smaller influences. The results advance the understanding of the radiation damage effects of the GaAs/AlAs superlattice, which thus provide guidance for designing highly stable and durable semiconductor superlattice based electronic and optoelectronics for extreme environment applications.
关键词： Point defect,Electrical properties,GaAs/AlAs superlattice,Hybrid density functional theory
更新于2025-09-04 15:30:14