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Study on electronic and optical properties of the twisted and strained MoS2/PtS2 heterogeneous interface
摘要： We report electronic and optical properties of the MoS2/PtS2 heterogeneous interfaces subject to various twisting angles based on the first principles simulation. In order to sustain the structural stability and avoid to have a large size cell, the optimized rotation angles of the MoS2/PtS2 heterogeneous interfaces are 19.1°, 30.0° and 40.9°. It is found from the first principle simulation that the absolute passband amplitude of the refractive index, extinction coefficient, reflectivity and absorption coefficient curves under 30.0° rotation angle are 6–12 times higher than 19.1° and 40.9° rotation angles of the MoS2/PtS2 heterogeneous interfaces. Moreover, under the 30.0° twisting angle, the absorption coefficient in the absorption spectrum can reach to or above 105/cm. The absorption spectrum has a red-shift and a broadening effect with the tensile strain, from roughly 700 nm (0% externally strain) to 1050 nm (5% externally strain). The prominent optical properties of MoS2/PtS2 heterogeneous interface under 30° rotation angle still exist after taking into consideration the spin-orbit coupling (SOC) effect. These results suggest that the MoS2/PtS2 heterogeneous interfaces will have great potential applications in tunable optoelectronic devices.
关键词： Twisting angle,Optical performance,Strain engineering,MoS2/PtS2 heterogeneous structure
更新于2025-09-19 17:15:36
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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
摘要： 2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS2) is demonstrated in this study. The few-layer PtS2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm2 V?1 s?1 and ultrahigh on/off ratio over 106 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 μs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.
关键词： broadband photodetection,PtS2,on-off ratio,field-effect transistors,mobility
更新于2025-09-12 10:27:22