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oe1(光电查) - 科学论文

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?? 中文（中国） ▾

  • Progress of display performances: AR, VR, QLED, and OLED

    摘要： In 2019, the device performances of the display technologies were largely advanced by the development of new materials and of the device architecture and driving scheme. The recent progress in the areas of virtual reality (VR), augmented reality (AR), quantum dot light-emitting diode (QLED), and organic light-emitting diode (OLED) is comprehensively summarized and discussed in this paper.

    关键词： OLED,VR,AR,QLED

    更新于2025-09-23 15:21:01

  • Red, Green, and Blue Microcavity Quantum Dot Light-Emitting Devices with Narrow Line Widths

    摘要： Colloidal quantum dots (QDs) are tiny particles produced chemically from semiconductor materials with sizes below 100 nm. Because of the quantum size effect, QDs have very unique luminescent properties. Based on these light emitters, quantum dot light-emitting diodes (QLEDs) exhibit outstanding electroluminescence (EL) performances and they are promising for application in displays, light sources and quantum-optoelectronic technologies. One of the greatest challenges in QLEDs is their low light outcoupling efficiency due to their planar structure, which limits the external quantum ef?ciency (EQE) of QLEDs for commercial applications. Here, we report the development of a set of red, green, and blue QLEDs with high EQE by incorporating microcavity structure in the devices. These microcavity devices exhibit modified EL spectra with full width at half maximum of 12-14 nm. Red, green, and blue microcavity QLEDs show maximum current efficiency and maximum EQE of 96.5 cd·A-1 and 33.1%, 102 cd·A-1 and 24.7%, and 2.91 cd·A-1 and 11.2%, respectively. We anticipate that a suitable design of a microcavity combining superior QDs will lead to excellent EL performance of QLEDs for displays, ideal QLED-based single-photon sources for quantum information technology, and electrically pumped QD lasers.

    关键词： EQE,narrow linewidth,QLED,quantum dot,microcavity,electroluminescence

    更新于2025-09-23 15:19:57

  • 31.4: <i>Invited Paper:</i> Recent Development of Soluble Hole Injection Material for Printed OLED and QLED Display

    摘要： We are developing the soluble hole injection materials and the inks, named ELsource? that can be used as hole injection layer in OLED display. OLED display is one of optical device. Therefore, we developed the hole injection materials with optical properties necessary for that optical devices. We also developed the hole injection material with the deeper ionization potential applicable to QLED display.

    关键词： Hole injection layer,Ionization potential,HIL,Refractive index,HIM,Printed,OLED,Optical property,Hole injection material,QLED,Soluble

    更新于2025-09-19 17:13:59

  • [IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Quantum-dot light-emitting diodes with NiO and NiO:Mg as hole injection layer

    摘要： Quantum-dot light-emitting diodes （QLED） have attracted great attention due to their impressive optoelectronic properties and stability. The most common used hole injection layer (HIL) material Poly(3,4-ethylenedioxytiophene):polystyrene sulfonate (PEDOT:PSS) is acidic and causes corrosion of indium-tin-oxide (ITO) anodes. Nickle oxide (NiO) are widely used as the hole transport layer (HTL) in QLED due to their suitable electrical properties. For the large energy gap between QD and HTL, there is unbalanced charge injection in QLED device when NiO is used. The energy band structures of NiO can be adjusted by Mg doping, which is an effective strategy to improve charge injection and mobility. Compared to undoped HIL, device with doped NiO give rise to higher EQE. In this work, our results suggests that Mg-doped NiO serve as a good hole injection layer materials for QLED and other optoelectronic devices.

    关键词： QLED,hole injection layer,Mg-doped NiO

    更新于2025-09-16 10:30:52

  • Development of InP Quantum Dot-based Light Emitting Diodes

    摘要： High performance quantum dot light emitting diode (QLED) is being considered as the next generation technology for energy efficient solid-state lighting and displays. InP QLED is the most promising alternative of the toxic CdSe QLED. Unlike the problems of poor hole injection in CdSe-based QLED, highly delocalized electrons and parasitic emissions are serious problems in green-emitting InP QLED. The loss mechanism and device physics in InP QLED have not been sufficiently studied since the first report of InP QLED in 2011. This review summarized the recent efforts on improving the performance of InP QLED, from the perspectives of core/shell structures to optimization of carrier transport layers. It is our intention to conduct a review as well as clarify some previous misunderstandings on the device physics in InP QLED, and provide some insights for the possible solutions of the challenging problems in InP QLED.

    关键词： InP quantum dots,carrier transport layers,parasitic emissions,core/shell structures,QLED

    更新于2025-09-16 10:30:52

  • 35.3: <i>Invited Paper:</i> Effects of Luminance, Contrast and Saturation of HDR QLED Display on Visual System Based on Eye Movement

    摘要： This paper investigated the effects of luminance, contrast and saturation of HDR video presented on QLED display on visual system. Results showed that mainly, contrast and saturation influenced visual neural systems controlling eye movements, as well as subjective evaluation of display quality and viewing preference, while luminance generally had no significant influence.

    关键词： eye movement,contrast,QLED,saturation,HDR

    更新于2025-09-11 14:15:04