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Efficient Orthogonal Control of Tunnel Couplings in a Quantum Dot Array
摘要： Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and interdot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all interdot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.
关键词： quantum simulation,quantum dot arrays,tunnel couplings,quantum computation,crosstalk compensation
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Valparaiso, Chile (2019.11.13-2019.11.27)] 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Fourier-Bessel Shapes in Output Photocurrents and Frequency Chirping Effects from Laser Fields
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0 .5 8 In0 .4 2 P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of Gax In1 ?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in Gax In1 ?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI , samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-23 15:21:01
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Electrochemiluminescence revealing that HNO3-oxidized single-walled carbon nanotubes are essentially tubular graphene quantum dot-nanoassemblies
摘要： Graphene quantum dots (GQDs) as recently emerging 0-D graphitic nanomaterials, have attracted much attention due to their unique optical, electrical and catalytic properties. However, some properties of GQDs, such as very small size, low density, and excellent water-solubility, make it difficult to be separated and immobilized. This may limit the recycle and purification of GQDs, and thus their applications in catalysis and sensing. In this work, we prepared tubular GQD-nanoassemblies (t-GQD-NAs) by etching single-walled carbon nanotubes (SWCNTs) with concentrated HNO3. The synthesized t-GQD-NAs were characterized by TEM, SEM, XPS, Raman spectroscopy and electrochemiluminescence (ECL) in details. t-GQD-NAs were much shorter and slimmer in morphology, bore more oxygen-containing groups, and had a higher surface defect density compared with SWCNTs. t-GQD-NAs not only maintained good UV absorption property of SWCNTs but also showed strong infrared ECL emission and broad ECL spectrum, verifying that t-GQD-NAs were assembled from GQDs of various sizes and some graphene nanoribbons. This is for the first time that 0-D GQDs were reported to be assembled into 1-D tubular carbon structures. The t-GQD-NAs with abundant surface states and good ECL activity could be easily separated, purified, and immobilized, suggesting their promising applications in ECL sensing and catalysis.
关键词： Graphene quantum dots,Single-walled carbon nanotubes,Electrochemiluminescence,Tubular graphene quantum dot-nanoassemblies
更新于2025-09-23 15:21:01
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Bias-induced chiral current and geometrical blockade in triangular triple quantum dot
摘要： We theoretically investigate the quantum transport properties of a triangular triple quantum dot (TTQD) ring connected to two reservoirs by an analytical derivation and an accurate hierarchical equations-of-motion calculation. We initially demonstrate a bias-induced chiral current under zero magnetic field caused by the coupling between the spin gauge field and spin current in a nonequilibrium TTQD that induces a scalar spin chirality, which lifts the chiral degeneracy and the time inversion symmetry. The chiral current oscillates with the bias within the Coulomb blockade regime, suggesting that the chiral spin qubit can be controlled by purely electrical manipulations. Then, the geometrical blockade of the transport current due to the localization of chiral states is elucidated by spectral function analysis.
关键词： triple quantum dot,quantum transport,chiral current,geometrical blockade
更新于2025-09-23 15:21:01
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Quantum Chip with the Optimized Tunnel Structure for Measuring a Charge Qubit Based on a Double Quantum Dot
摘要： A circuit of a measuring chip for determining an arbitrary pure state of a charge qubit is proposed. The strength of the current flowing through a single-electron transistor in the steady-state mode depends on the state of the qubit. To enhance the sensitivity of the transistor, its working part is built from three quantum dots (QDs) with the energy levels forming a symmetric configuration. The parameters of the system are calculated using a microscopic model of two-dimensional QDs. The time dependences of the population of the structure’s states are obtained and the current strength, sensitivity, and measuring contrast as functions of the geometric parameters of the system are determined. The effect of dissipative processes related to the acoustic phonons on the measurements is investigated and the rates of electron relaxation and dephasing in a two-level system are calculated.
关键词： quantum dot,charge qubit,acoustic phonons,single-electron transistor,quantum detector,electron tunneling
更新于2025-09-23 15:21:01
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Highly Stable Red Quantum Dot Light Emitting Diodes with Long T <sub/>95</sub> Operation Lifetime
摘要： Quantum dot light-emitting diodes (QLEDs) with excellent performances such as external quantum efficiency (EQE) and lifetime have almost met the requirement of low brightness display. However, the short operation lifetime under high brightness limits the application of QLEDs in outdoor displays and lightings. Herein, we report a highly efficient, stable red QLED by using of lithium and magnesium co-doped as well as magnesium oxide shell-coated zinc oxide nanoparticle layer as electron transport layer (ETL). The optimized QLED has a high peak EQE of 20.6%, a low efficiency roll-off at high current, and a remarkably long lifetime T95 > 11000 h at 1000 cd m-2, which indicates the realization of the most stable red QLED up to now. The improvement in the long-term stability of the QLED is attributed to the use of co-doped and shell-coated zinc oxide ETL with reduced electron injection to improve the charge balance in device.
关键词： EQE,QLEDs,electron transport layer,ETL,magnesium oxide shell-coated zinc oxide,Quantum dot light-emitting diodes,external quantum efficiency,lithium and magnesium co-doped,ZLMO@MO,lifetime
更新于2025-09-23 15:21:01
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Dynamics of an open double quantum dot system via quantum measurement
摘要： We study the dynamics of a double quantum dot (DQD) system interacting with a Gaussian white noise (GWN) environment which is measured by a quantum point contact (QPC) device. With both the transverse and longitudinal noise taken into account, we utilize an effective method by adding an additional Bloch vector to calculate the cumulant generating functions of the electron transfer in the QPC detector based on the full counting statistics. We study the average detector current, Fano factor, and average waiting time of the electron transfer in the presence of decoherence effects of the DQD system caused by both the QPC and the GWN environment. It indicates that the decoherence effects arising from the QPC and the GWN environment have obviously different influences on the electron transfer detected by the QPC device in both short-time and long-time limits. It is shown that the measurement process would localize the electron in a DQD in a short time and that the distribution of the average current and Fano factor versus level displacement in long-time limit are broadened due to the interaction between the system and GWN environment, which provides a reliable method to explore the dynamical behavior of an open quantum system and to extract the characteristics of the environment by analyzing the detector outcome. Our results provide theoretical support for studies of quantum measurement in a semiconductor device affected by a fluctuant environment.
关键词： full counting statistics,Gaussian white noise,quantum point contact,double quantum dot,decoherence
更新于2025-09-23 15:21:01
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High efficiency and stability of ink-jet printed quantum dot light emitting diodes
摘要： The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
关键词： quantum dot light emitting diodes,ink-jet printing,external quantum efficiency,dual ionic passivation,lifetime
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Hot-Carrier Extraction in InAs/GaAs Quantum Dot Superlattice Solar Cells
摘要： We demonstrated hot-carrier (HC) extraction in GaAs solar cells containing InAs/GaAs quantum dot superlattices (QDSLs) functioning as a light absorber at 15 K. The short-circuit current density and the open-circuit voltage in the QDSL solar cells show step-wise changes as a function of the excitation photon density because of state filling under below-bandgap excitation. Furthermore, the short-circuit current density and the open-circuit voltage originated from the HC extraction were enhanced by increasing the period of the QDSL due to the improved absorptivity.
关键词： InAs quantum dots,GaAs,quantum dot superlattices,energy-selective barrier,hot-carrier solar cells
更新于2025-09-23 15:21:01
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ZnO Nanosheets Modified with Graphene Quantum Dots and SnO2 Quantum Nanoparticles for Room-Temperature H2S Sensing
摘要： Overcoming the low selectivity issue of semiconductor oxide (SMO)-based gas sensors at room temperature and realizing the accurate detection of trace disease biomarkers are highly desirable for widespread deployments of sensors in exhaled breath. Here, a self-assembly strategy is proposed to create a graphene quantum dot (GQD) functionalized porous and hierarchical SnO2 quantum nanoparticles (SnO2QNP)/ZnO nanostructure. SnO2QNP/ZnO nanosheets self-assembled directly on the digital integrated electrodes with a post-synthetic humidity treatment (psHT), the construction of GQD and SnO2QNP loaded ZnO nanosheet heterostructure is highly controllable and reproducible. The strong synergistic effect and p-n heterojunction between the p-type GQD and n-type SnO2 and ZnO effectively enlarged the resistance variation due to the change in oxygen adsorption. In comparison with pristine ZnO and SnO2/ZnO sensors, the GQD modified hierarchical SnO2QNP/ZnO nanostructure exhibited a remarkably high response (S=15.9 for 0.1 ppm H2S) and rapid response/recovery time (14/13s), and good selectivity towards H2S against other interfering gases. In particular, we applied principal component analysis (PCA) to analyze the sensing performance of GQD-SnO2QNP/ZnO sensor and found that the combined effects of GQD/SnO2QNP/ZnO heterointerfaces contributed to the improvement of selectivity of sensors. The results demonstrate that the GQD modified SMO with the hierarchical structure has a high potential in the non-invasive exhaled diagnosis.
关键词： graphene quantum dot,principal component analysis,exhaled diagnosis,gas sensor,zinc oxide nanosheet,tin dioxide quantum nanoparticle
更新于2025-09-23 15:21:01