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Compositional analysis by RBS, XPS and EDX of ZnO:Al,Bi and ZnO:Ga,Bi thin films deposited by d.c. magnetron sputtering
摘要： Rutherford backscattering spectrometry, X-ray photoelectron and X-ray energy dispersive spectroscopies were employed to analyse Bi incorporation into ZnO:Al and ZnO:Ga transparent and electrically conductive thin films deposited by d.c. magnetron sputtering, with thickness in the range of 300–400 nm. Sputtering was performed in an argon atmosphere from two targets in confocal geometry being one composed of either ZnO:Al2O3 or ZnO:Ga2O3 composites and the other a Bi metal target. The content of bismuth dopant in the ZnO matrix was controlled by the respective target current density (JBi) in order to attain a high optical transparency (> 80%) in the visible region. For ZnO:Al,Bi films Bi content varied from 0.1 to a maximum of 1.5 at.% when varying JBi from 0.06 to 0.26 mA cm?2. However, for ZnO:Ga,Bi films, deposited in similar conditions, Bi reached a maximum overall layer content of 2.4 at.%, with a surface enrichment content that varied from 1.3 to 8.8 at.%. It was also observed that the Bi content in the topmost layers of the films is slightly depleted due to thermal evaporation upon thermal annealing in vacuum at 350 °C. It is envisaged applications for these films as transparent photoelectrodes and thermoelectric materials.
关键词： Ga,Bismuth,TCO,Doping,Thermoelectric,Al,XPS,RBS,PIXE,ZnO
更新于2025-09-23 15:23:52
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Surface characteristics of nitrogen ion implanted CR-39 polymer: RBS studies
摘要： This paper investigates the surface characteristics of nitrogen ion implanted CR- 39 polymer. The specimens were implanted with 100 keV N+ beam to various ?uences of 1 × 1015, 1 × 1016 and 2 × 1016 ions cm?2. The ion implantation induced modi?cations in these specimens were analyzed by Rutherford Backscattering Spectrometry (RBS) and UV- Visible spectroscopy. RBS studies reveal that the structure of the virgin CR-39 specimen has been modi?ed completely after N+ implantation. The spatial distribution in the form of carbonization, projected range, retained dose and atomic concentration of implanted nitrogen have been estimated using RBS spectra. RUMP analysis revealed that for the implanted specimen at ?uence 2 × 1016 N+ cm?2, the carbon concentration increases from 32 at.% to 43 at.% and oxygen concentration from 19 at.% to 26 at.% respectively near the surface. This increase in the concentration of carbon points towards the carbonization in the implanted layers. Furthermore, UV–Visible transmission spectra demonstrate that for higher ?uences, almost complete UV region is blocked; making CR-39 a viable functional material for UV blocking devices.
关键词： RBS,Ion implantation,UV–Visible spectroscopy,CR-39
更新于2025-09-23 15:21:01
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Ion irradiation effects on Sb-rich GaSb films
摘要： Here we show the formation of amorphous, non-stoichiometric GaSb films by magnetron sputtering and the ion irradiation effects on the films. GaSb films in the 20–300 nm thickness range were deposited by magnetron sputtering on SiO2/Si substrates at room temperature and subsequently irradiated with 17 MeV Au+7 ions at different fluences. Structural, compositional, and morphological characterizations were performed by means of x-ray diffraction, Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, scanning electron microscopy and x-ray absorption fine structure analyses. We could verify that, throughout the above-mentioned thickness range, films were amorphous, with excess Sb to the ratio 1:2 (Ga:Sb). The initially compact films attained a foam-like structure after irradiation, with significant swelling that is dependent on the initial film thickness: the thicker the film, the more it swelled. The excess Sb attained different oxidation states depending on film thickness and this influenced the final density of the films, thus influencing the swelling. The local atomic structure around Ga atoms was also investigated, revealing a decrease in Ga–Sb scattering contribution with increasing irradiation fluence, at the same time as the increase in Ga–O scattering for irradiation fluence above 1×1014 at/cm2 (inclusive).
关键词： XPS,XAFS,RBS,GaSb films,ion irradiation,XRD,magnetron sputtering
更新于2025-09-09 09:28:46
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Annealing effects on the properties of tin thin films
摘要： The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ～8 nm/min. After deposition the samples were annealed for 1 h at 600 °C and 2 h at 700 °C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.
关键词： RBS,annealing,sputtering,thin film,XRD,titanium nitride,TEM
更新于2025-09-09 09:28:46
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Influence of 120 MeV S9+ ion irradiation on structural, optical and morphological properties of zirconium oxide thin films deposited by RF sputtering
摘要： The calibrated and controlled swift heavy ions (SHI) beam irradiation generates defects which can cause modifications in various properties of the materials such as structural, optical, magnetic, morphological, and chemical etc. The passage of ion through the target material causes the nuclear energy losses (Sn) and electronic energy losses (Se). The Se dominates over Sn in SHI irradiation. In the present study, ZrO2 thin films were grown on silicon and glass substrate by using RF sputtering deposition technique. For the purpose of modifications induced by swift heavy ions, these films were irradiated by a 120 MeV S9+ ion beam of 1 pnA current, with varying ion fluences from 5E12 to 1E13 ions/cm2, using the tandem accelerator at the Inter University Accelerator Center (IUAC), New Delhi, India. The X-ray diffraction (XRD) patterns confirmed the formation of monoclinic and tetragonal phases and it was observed that XRD peak intensities increased up to the fluence of 5E12 ions/cm2 followed by opposite behavior at higher fluences. Atomic force microscope (AFM) study revealed the increased surface roughness after SHI irradiation. In addition to it, the formation of electronic transition states in optical band gap region and enhancement of absorption edge was observed from UV- visible spectroscopy (UV-Vis) results due to which direct band gap energy value decreased from those of un-irradiated samples. Photoluminescence (PL) broad emission spectra were determined using the excitation wavelength at 290 nm with the prominent peak at 415 nm which can be ascribed to Zr vacancies due to band edge emission as a result of free- exciton recombination. Rutherford backscattering spectrometry (RBS) technique was used for depth profiling and elemental composition in zirconia thin films. The expected role of electronic energy loss during ion irradiation to modify the properties of the material has been discussed.
关键词： PL,ZrO2 thin films,XRD,UV-Vis,AFM,RBS,SHI irradiation
更新于2025-09-09 09:28:46