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Correlation of acetylene plasma discharge environment and the optical and electronic properties of the hydrogenated amorphous carbon films
摘要： Thin films from polymeric and graphitic hydrogenated amorphous carbon (a-C:H) were deposited over a glass substrate from acetylene (C2H2) plasma by using a conventional plasma enhanced chemical vapor deposition (PECVD). Radio frequency capacitively coupled plasma (RF CCP) source operating at a frequency of 13.56 MHz was used for generation of the discharge. Optical emission spectroscopy (OES) results showed strong optical emissions from diacetylene ion C4H2+ at a wavelength of 506 nm. The energy dispersive X-Ray (EDS) measurements illustrated that the carbon content in the deposited films increased with increasing of power. The Raman and IR results demonstrated that the films deposited at low bias voltages 340 V are so called polymeric a-C:H with high sp3 fraction and high hydrogen content, while the films deposited at high bias voltages 877 V are so called graphitic a-C:H with low sp3 fraction and low hydrogen content. Quantitative information were obtained from fitting the high asymmetrical vibrational modes of Raman and IR spectra by using Fano model expression together with Lorentzian function. The results presented here point out that there is a relation between the intensity of C4H2+ ion emissions and the deposited films properties.
关键词： Optical Emission,diacetylene ion,RF CCP,Hydrogenated amorphous carbon,FTIR,Raman spectroscopy
更新于2025-11-14 15:30:11
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Numerical Modeling of Plasma Silicon Discharge for Photovoltaic Application
摘要： In this work, we perform a numerical modeling of silicon thin film deposition for a photovoltaic application in a capacitive coupled plasma reactor (CCP) using RF excitation. Plasma equations are solved by finite element numerical method. The deposition is done by plasma of SiH4/Ar/H2 in low pressure and low temperature. The results provide the fundamental features of plasma discharge such as density, temperature and electrical potential. It is shown that the gas mixture used covers a large energy range, which entails a high deposition rate. Furthermore, the use of CCP reactor yields a uniform deposition without surface deterioration.
关键词： Numerical modeling,RF Plasma,CCP reactor,SiH4/Ar/H2,Finite Element Method
更新于2025-09-16 10:30:52
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Numerical analysis for optimization of the sidewall conditions in a capacitively coupled plasma deposition reactor
摘要： Capacitively coupled plasma (CCP) is mainly being used in the semiconductor industry for plasma-enhanced chemical vapor deposition of uniform thin films. Because a discharge volume in the standard configuration of a CCP reactor is surrounded not only with electrode surfaces but also with a sidewall, the sidewall conditions affect the deposition rate profiles noticeably. By toggling the boundary condition from a grounded conductor to dielectrics with the variations of the relative permittivity and the thickness, we compare the spatial profiles for the species densities, ionization rate, power absorption, and particle fluxes in a SiH4/He CCP. Through the SiH4/He CCP fluid model, it is found that a thick and low-permittivity insulator achieves the most uniform plasma density distribution in the interelectrode region and, consequently, the best uniformity in the deposition rate profile of an a-Si:H film. As a validation, experimental results are compared with fluid modeling results, and they match well. For additional validation, a particle-in-cell simulation of pure Ar discharge is also performed. Although simulation conditions are totally different from those of the SiH4/He fluid model, it consistently demonstrates that the dielectric sidewall brings about more uniform distributions of the plasma parameters than the grounded sidewall.
关键词： deposition rate,SiH4/He CCP,PECVD,Capacitively coupled plasma,plasma uniformity
更新于2025-09-12 10:27:22