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Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells
摘要： Magnesium zinc oxide (MZO) is a promising front contact material for CdTe solar cells. Due to its higher band gap than traditional CdS, MZO can reduce parasitic absorption to significantly increase short-circuit current density while also providing a benefit of conduction band offset tuning through Mg:Zn ratio optimization. MZO has been successfully implemented into CdTe devices, however its stability has been of concern. The MZO stability issue has been attributed to the presence of oxygen in the CdTe device processing ambient, leading to double-diode behavior (S-kink) in the current density-voltage curves. Here we report on MZO thin films deposited by reactive co-sputtering. The reactively co-sputtered MZO thin films have encouraging stability, show no significant variation in work function of the surface over a period of 6 months, as measured by Kelvin probe. Energy conversion efficiencies of around 16% have been achieved both with and without presence of oxygen in device processing ambients across multiple research facilities. These efficiencies should be possible to increase further by tuning of the thin film deposition and device processing parameters, especially through optimization of the back contact.
关键词： Stability,Thin film photovoltaics,Reactive sputtering,CdTe,MgxZn1-xO
更新于2025-09-23 15:19:57
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Effects of substrate-controlled-orientation on the electrical performance of sputtered BaTiO <sub/>3</sub> thin films
摘要： In this work, the relationships between bottom electrode/substrate configuration, crystalline microstructure, and electrical performances of BaTiO3 (BTO) thin films were investigated. The films were fabricated via RF magnetron sputtering on (Sr0.5La0.5)CoO3 (LSCO) buffered (110)-, (111)-SrTiO3 (STO) and SrRuO3 (SRO) buffered (110)-, (111)-MgO (MGO) substrates. The x-ray diffractometer results show that the LSCO/STO substrate resulted in films with high-quality epitaxial orientation, whereas the SRO/MGO substrate resulted in films having a strong (110) texture. The electrode/substrate configurations were designed to control the crystalline microstructure, which in turn affects the electrical performances of the films. The electrical performances were studied by employing a metal/ferroelectric/metal model. The J-V characteristics show obvious asymmetry with bias, which is mainly due to the varying transport state of oxygen vacancies. BTO films grown on LSCO/STO substrates exhibit large dielectric frequency dispersion, while those grown on SRO/MGO substrates display a nearly frequency independent response. All electrical parameters of these films were strongly affected by the polarization-tilting angle and the preferred orientation degree. Epitaxial and textured (110)-oriented films show higher permittivity but lower loss tangent, free-carrier concentration, built-in voltage, and leakage current density as compared to the epitaxial (111)-oriented film.
关键词： dielectric properties,electrical performance,substrate-controlled-orientation,BaTiO3 thin films,RF magnetron sputtering
更新于2025-09-23 15:19:57
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Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
摘要： This paper presents new photovoltaic solar cells with Cu2ZnSnSe4/CH3NH3PbI3(MAPbI3)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glass-substrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650°C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 ?.
关键词： IZO,hole-transporting material,perovskite,CZTSe,magnetron sputtering
更新于2025-09-23 15:19:57
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Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications
摘要： Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm?1 frequency, and a relatively wide peak was found at 265 cm?1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2? state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.
关键词： covellite,CuS/SnS absorber,CuS thin film,solar cell,RF magnetron sputtering
更新于2025-09-23 15:19:57
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System for manufacturing complete Cu(In,Ga)Se2 solar cells in situ under vacuum
摘要： We present the development of a small foot-print physical vapor deposition (PVD) system for in-situ deposition of all layers required in a complete Cu(In,Ga)Se2 (CIGS) solar cell. Seven sputtering magnetrons and one valved-cracker source have been custom designed and manufactured for this system, named SpuTtering for Advanced Research (STAR). The purpose of STAR is to develop a technique to fabricate a complete CIGS solar cell, including contacts, absorber, buffer, and window layers, under high vacuum with the aim to transfer this technology to a future industrial production line. The system’s capabilities and its relatively high throughput place it somewhere in between research and industrial development levels. It is possible to work on the deposition of the back contact, the CIGS absorber, and the window layer of three solar cells simultaneously. Calibration data, selection of parameters for the deposition of the individual layers, and initial results of a complete CIGS solar cell developed with STAR are reported.
关键词： Pulsed evaporation,Thin-film photovoltaics,Cu(In,Ga)Se2,Sputtering
更新于2025-09-23 15:19:57
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Performance analysis of p-LPZO/n-GZO and p-SZO/n-GZO homojunction UV photodetectors
摘要： A comprehensive analytical model for the dark current and photoresponsivity of ZnO thin film based homojunction ultraviolet (UV) photodetector (PD) is proposed in this study. The detailed insight about the effects of different acceptor doping materials in the illuminated surface layer is presented in this work. The recombination velocity of the carriers and the effect of applied reverse bias, specifically on the responsivity of p-n homojunction based UV PD are elucidated. The impact of two different types of dual ion beam sputtering (DIBS)-grown acceptor-doped ZnO (Sb:ZnO and Li-P:ZnO) materials on the responsivity is also discussed. The investigation results reveal that an increase in applied reverse bias results in higher responsivity due to depletion region increase leading to higher charge carrier photogeneration. Further, on comparing the results with the experimentally reported ZnO-based homojunction UV PDs, it is found that, by incorporating Sb:ZnO as p-type layer, dark current and responsivity values are improved by ~38 and ~63.7%, respectively. Hence, the developed model is significant for the design optimization of high-performance ZnO thin film-based UV homojunction PDs.
关键词： Dual ion beam sputtering (DIBS),Responsivity,Photodetector (PD),Ultraviolet (UV)
更新于2025-09-23 15:19:57
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Novel boron doped p-type Cu2O thin film as hole selective contact in c-Si solar cell
摘要： P-type Cu2O thin film doped with trivalent cation Boron is demonstrated for the first time as an efficient hole selective layer for c-Si heterojunction solar cell. Cu2O and Cu2O:B films were deposited by rf- magnetron sputtering and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the Cu2O film. The band alignment of the Cu2O:B/Si heterojunction was investigated using XPS and UPS measurements. The Cu2O:B/Si interface has a valance band offset of 0.08 eV which facilitates hole transport and a conduction band offset of 1.35 eV which block the electrons. A thin SiOx tunnel oxide interlayer was also explored as the passivation layer. The initial trials of incorporating this Cu2O:B layer as hole transporting layer in a single heterojunction solar cell with the structure, ITO/Cu2O:B/n-Si/Ag, and cell area of 1 cm2 yielded an open-circuit voltage of 370 mV, short-circuit current density of 36.5 mA/cm2 and an efficiency of 5.4 %. This p-type material could find potential applications in various optoelectronic applications like organic solar cells, TFTs, and LEDs.
关键词： Silicon heterojunction,Photovoltaics,Carrier selective solar cells,Sputtering,Copper Oxide,Hole Selective layer
更新于2025-09-23 15:19:57
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Comparative study of optimised molybdenum back-contact deposition with different barriers (Ti, ZnO) on stainless steel substrate for flexible solar cell application
摘要： In this study, we optimised the molybdenum (Mo) back-contact layer for solar cell applications on stainless steel substrates using direct-current (dc) sputtering with varying sputtering powers (100 W to 500 W) and pressures (5 mTorr to 20 mTorr). We comparatively analysed the effectiveness of titanium (Ti) layer deposited using e-beam evaporation deposition and zinc oxide (ZnO) layer deposited using radio-frequency (RF) sputtering for barrier application with Mo. Structural characterisation of the optimised Mo films was carried out using XRD studies confirmed the (110) plane corresponding to the body-centred cubic (bcc) structure. Estimated Mo film parameters for films deposited on barrier layers were compared against films deposited on SS substrate without any barriers as these properties influence the prospective diffusion of Fe and Cr into the absorber layer. Surface characterisation of the deposited films was carried out using a scanning electron microscopy (SEM) to study the morphology of films, and energy-dispersive X-ray (EDX) to identify elemental presence to confirm the blockage of the impurities atoms through the film. Secondary ion mass spectroscopy (SIMS) was employed to study the depth profiles of films while atomic force microscopy (AFM) was used to characterise the topographical properties from the sputtered Mo film and analyse the grain properties of the films. A low resistivity value of 0.511 × 10–6 Ω m for Mo films on the reference glass substrate and 0.625 × 10–6 Ω m for the Mo film on ZnO barrier was measured using the four-point probe. We observed a further 40% reduction in impurities using annealed ZnO barrier combined with an optimised Mo layer.
关键词： flexible solar cell,stainless steel substrate,sputtering,barrier layers,molybdenum back-contact
更新于2025-09-23 15:19:57
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Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications
摘要： F-and-Ga co-doped ZnO films were sputter-deposited on glass substrates by RF magnetron sputtering method. The fabricated films were characterized by different techniques. It was found that all the films were poly-crystalline with a hexagonal wurtzite structure with a c-axis preferred orientation of growth. The effect of the substrate temperature on the surface morphology, electrical and optical properties of the films was also investigated. The optimal growth temperature was found to be 440 oC which led to the optimal film with the resistivity of 6.81 × 10?4 Ωcm, carrier concentration of 2.61 × 1020 cm?3, mobility of 35.1 cm2/V, over-90% transmittance in the region of 400–1200 nm and a wide optical bandgap of 3.49 eV. This optimal film was employed in as the front contact in perovskite solar cells and resulted in a high power-conversion efficiency of 15.32%. This indicates that such a film can be promisingly useful for high-performance thin-film solar cells.
关键词： High mobility,Thin-film solar cells,F-and-Ga co-doped ZnO films,Magnetron sputtering
更新于2025-09-23 15:19:57
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Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells
摘要： Magnetron sputtering has become an effective method in Sb2Se3 thin film photovoltaic. Research found that post-selenization treatments are essential to produce stoichiometric thin films with desired crystallinity and orientation for the sputtered Sb2Se3. However, the influence of the sputtering process on Sb2Se3 device performance has rarely been explored. In this work, the working pressure effect was thoroughly studied for the sputtered Sb2Se3 thin film solar cells. High-quality Sb2Se3 thin film was obtained when a bilayer structure was applied by sputtering the film at a high (1.5 Pa) and a low working pressure (1.0 Pa) subsequently. Such bilayer structure was found to be beneficial for both crystallization and preferred orientation of the Sb2Se3 thin film. Lastly, an interesting power conversion efficiency (PCE) of 5.5% was obtained for the champion device.
关键词： Sb2Se3,magnetron sputtering,substrate configuration,post-selenization,working pressure,thin film solar cell
更新于2025-09-23 15:19:57