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Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films
摘要： Phosphorus doped silicon carbide film as emitter in heterojunction structure was deposited on p-type Si(100) wafers at various deposition conditions by means of PECVD technology using silane (SiH4), methane (CH4), hydrogen (H2) and phosphine (PH3, 2 vol.% in H2) gas as precursors. ITO or IZO film was RF magnetron sputtered on top of the different P doped a-SiC:H(n) film. Irradiation of structures with Xe ions to total fluency 5x1011 cm-2 was performed at room temperature. Influence of phosphorus concentration and type of transparent conducting oxide was investigated. A deeper insight on the impact of irradiation on the electrophysical properties of sample was obtained by the analysis of complex impedance spectra.
关键词： Xe ions irradiation,RF magnetron sputtering,TCO antireflection films,radiation hardness,impedance spectra,heterojunction solar cell,PECVD
更新于2025-09-19 17:13:59
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Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR Photodetector Arrays with High Responsitivity
摘要： Due to its excellent electrical and optical property, tin selenide (SnSe), a typical candidate of two-dimentional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remain a great challenge which limit its practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization are deposited via a scalable magnetron sputtering method. The results show that the SnSe photodetector is highly sensitive to a broad wavelength in the UV-Visible-NIR range, especially showing an extremely high responsivity of 277.3 A W -1 with the corresponding external quantum efficiency of 8.5×104% and detectivity of 7.6×1011 Jones. These figures-of-merits are among the best performance for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of the localized defects are discussed in details. The results indicate that the few-layered SnSe films from the sputtering growth would have great potential in designing high-performance photodetector arrays.
关键词： tin selenide,detectivity,responsivity,optoelectronics,SnSe,UV-Visible-NIR,2D semiconductors,external quantum efficiency,photodetector,magnetron sputtering
更新于2025-09-19 17:13:59
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Copper doping of Sb2S3: fabrication, properties, and photovoltaic application
摘要： Sb2S3 solar cells are lagging behind conventional thin-film solar cells such as silicon solar cells and cadmium telluride solar cells in the power conversion efficiency (PCE). One of the most prominent problems is that the carrier concentration of Sb2S3 is relatively low. In order to increase the carrier concentration, elemental Cu was doped into Sb2S3 film by radio-frequency (RF) magnetron sputtering. We proved that Cu was doped into Sb2S3 films and mainly anchored with sulfur in the form of copper chalcogenide species at the surface and grain boundaries of Sb2S3. The doping of Cu essentially affects the physical and electrical properties of RF-sputtered Sb2S3 films such as the optical band gap, crystallinity, chemical composition, morphology, and carrier concentration. Specially, the electronic carrier concentration is remarkably increased from 6.28 × 109 to 6.06 × 1010 cm?3 and the Fermi level is also significantly uplifted after prudent doping with Cu. Planar solar cells based on RF-sputtered Cu-doped Sb2S3 absorber deliver an increased PCE of 1.13% and show good stability. This research proves that doping of Cu is an alternative and effective way to improve the electronic property of Sb2S3 films and enhance the performance of Sb2S3 solar cells.
关键词： RF magnetron sputtering,Cu-doping,photovoltaic application,carrier concentration,Sb2S3 solar cells
更新于2025-09-16 10:30:52
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Semi-transparent perovskite solar cells with directly sputtered amorphous InZnSnO top cathodes for building integrated photovoltaics
摘要： We report on a low plasma damage sputtering amorphous InZnSnO (IZTO) top cathode prepared using linear facing target sputtering (LFTS) at room temperature for semi-transparent perovskite solar cells (PSCs) to be applied as building integrated photovoltaics. The effective confinement of high-density plasma between InZnO and InSnO targets by directional magnet fields and negative bias applied simultaneously on both targets led to the successful sputtering of the amorphous IZTO top cathode on the semi-transparent PSCs without plasma damage or degradation of PSC performance. At an optimal sputtering condition of the IZTO top cathode, the semi-transparent PSC showed an open circuit voltage (1.056 V), short circuit current (16.79 mA/cm2), fill factor (51.19 %), and power conversion efficiency (9.081 %) comparable to those of reference PSC with an Ag metal top cathode. Based on synchrotron GIWAXS and high-resolution transmission electron microscopy examinations, we suggested a possible mechanism with which to explain the plasma damage effect on the performance of PCSs while sputtering IZTO top cathode on semi-transparent PSCs.
关键词： Low plasma damage,top cathode,InZnSnO,Linear facing target sputtering,Semi-transparent perovskite solar cells
更新于2025-09-16 10:30:52
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Giant detectivity of ZnO-based self-powered UV photodetector by inserting an engineered back gold layer using RF sputtering
摘要： The realization of high-responsivity, self-powered and low-cost ultraviolet (UV) photodetector (PD) based on eco-friendly and earth-abundant compounds, remains far from satisfactory for future optoelectronic applications. In this paper, we demonstrated a new high-performance UV-PD based on planar ZnO thin-film, efficiently operating without any power supply. The proposed device was elaborated by evaporating an engineered back metallic layer onto the glass substrate and then depositing ZnO thin layer through RF sputtering technique. The sensor structural and optical properties were systematically analyzed by the techniques of X-ray diffraction (XRD) and UV–Vis absorbance spectrometry. The resulted ZnO UV-PD showcased a clear and distinctive photovoltaic behavior. Interestingly, it also demonstrated a high responsivity of 0.38A/W and a giant detectivity exceeding 1014 Jones at zero bias, which is much higher than other reported self-powered UV-PD despite the use of an All-ZnO structure. The device photodetecting mechanism in self-driven mode was discussed using the energy band diagram, where the key role of the engineered back metallic layer in modulating the electric field distribution within the ZnO active region to effectively achieve an asymmetric behavior is emphasized. Therefore, the presented work offers a novel pathway to design high-responsivity self-powered UV-PDs based on a simple All-ZnO structure.
关键词： detectivity,ZnO,Self-powered,low cost,UV photodetectors,RF sputtering
更新于2025-09-16 10:30:52
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Performance improvement of perovskite solar cells using vanadium oxide interface modification layer
摘要： To improve the performance of perovskite solar cells (PSCs), vanadium oxide (VOx) film was deposited as an interface modification layer (IML) by a radio frequency magnetron sputtering system. The VOx IML was utilized to modify the interface between the indium tin oxide (ITO) anode electrode and the poly(3,4-ethylenedioxythiophene)-poly (styrene sulfonate) (PEDOT:PSS) hole transport layer (HTL). The valence band maximum (VBM) of 4.94 eV of the VOx films was measured by an ultraviolet photoelectron spectroscopy (UPS). Using the optical energy bandgap and the VBM of the VOx film, the conduction band minimum (CBM) energy level was 2.12 eV. This phenomenon verified that the VOx IML could be an electron blocking layer and made a more match energy level between the work function of ITO anode electrode and the highest occupied molecular orbital (HOMO) of PEDOT:PSS HTL. Using the measurement of contact angle, the surface energy of PEDOT:PSS HTL spun on VOx IML and ITO anode electrode was evaluated as 47.76 mJ/m2 and 38.21 mJ/m2, respectively. The enhanced surface energy of the PEDOT:PSS HTL spun on VOx IML could improve the adhesion ability of the perovskite absorption layer spun on the PEDOT:PSS HTL. Consequently, the carrier extraction could be enhanced and the leakage current could be reduced by the predominant functions of VOx IML. Therefore, the performances of the PSCs were significantly improved. The power conversion efficiency (PCE) of the PSCs with VOx IML was enhanced from 9.43% to 13.69% in comparison with the conventional PSCs without VOx IML.
关键词： Vanadium oxide,Perovskite solar cells,Interface modification layer,Radio frequency magnetron sputtering system
更新于2025-09-16 10:30:52
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The impact of nano-bubbles on the laser performance of hafnia films deposited by oxygen assisted ion beam sputtering method
摘要： Hafnia is a high refractive index material used in the manufacturing of dielectric coatings for next generation lasers. The formation of defects during deposition is the major barrier to realizing high laser-damage resistant coatings for future high energy density laser applications. Understanding the precursors responsible for laser-induced damage in hafnia is therefore critical. In this work, we investigate the mechanism of laser-induced damage in 90-nm thick hafnia films produced by an oxygen assisted dual ion beam sputtering (IBS) process. Under pulsed, nanosecond ultraviolet laser exposure (355 nm, 8 ns), the laser-induced damage onset is found to be strongly dependent on the amount of argon and excessive oxygen entrapped in the nanobubbles within the hafnia films. The presence of nanobubbles is revealed and confirmed by small angle X-ray scattering and scanning/transmission electron microscopy coupled with high-angle annular dark-field. The damage onset is stable initially but decreases as the energy of oxygen goes beyond 100 eV. The damage initiation is ascribed to a laser-induced plasma generation within the nanobubbles through multiphoton ionization. The results reveal that nanobubbles formed in the IBS produced coatings are a potent precursor. Although nanobubbles are commonly present in IBS films, their negative impact on laser damage resistance of hafnia films has not been previously recognized. Our findings provide a fundamental basis for the development of potential mitigation strategies required for the realization of laser damage resistant hafnia films.
关键词： laser-induced damage,multiphoton ionization,ion beam sputtering,hafnia,nanobubbles
更新于2025-09-16 10:30:52
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Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
摘要： The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully ?lled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with di?erent seed layer structures. These samples were fabricated by di?erent sputtering and treatment approaches, and accompanied with various electroplating pro?le adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface e?ect of the TSV structure.
关键词： TSVs,interface e?ect,electroplating,sputtering
更新于2025-09-16 10:30:52
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[IEEE 2019 6th International Conference on Space Science and Communication (IconSpace) - Johor Bahru, Malaysia (2019.7.28-2019.7.30)] 2019 6th International Conference on Space Science and Communication (IconSpace) - Investigating the Impact of Deposition Power on PVD Growth WS2 for Solar Cell Application
摘要： Physical Vapor Deposition (PVD) was used to grow ultra-thin tungsten di sulfide (WS2) layers on top of soda lime glass substrates. Deposition power of radio frequency magnetron sputtering was varied (50W, 100 W, 150 W,200 W and 250 W) to study its impact on film characteristics for suitable application in solar cell. Structural, morphological and opto-electrical properties of as grown film were analyzed. Optimized monocrystalline ultra-thin WS2 films of enhance crystallite (690 nm thick) were successfully hoarded with RF power of 150 W under 100oC temperature.
关键词： solar cell,thin film,sputtering,Tungsten di sulfide (WS2)
更新于2025-09-16 10:30:52
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Thin films of Au-Al2O3 for plasmonic sensing
摘要： This works reports on the development of nanoplasmonic thin films, composed of Au nanoparticles embedded in an Al2O3 matrix. The Au-Al2O3 thin films were deposited by magnetron sputtering, and then subjected to thermal treatments (in-air) to promote the growth of the Au nanoparticles. The change of the number of gold pellets placed in the erosion zone of the aluminium target, originated Au concentrations in the films from 8.9 at.% to 20.7 at.%. While the Al2O3 matrix remained roughly stoichiometric and amorphous after the thermal treatment, a progressive crystallization of the Au nanoparticles was observed when the annealing temperature increased from 400 °C to 700 °C. Nonetheless, the amorphous matrix limited the growth of Au nanoparticles up to 20 nm. Moreover, the application of an argon plasma treatment enabled the removal of superficial layers, increasing the density of Au nanoparticles partially exposed at the films’ surface. Envisaging the application in localized surface plasmon resonance sensors, the thin films were tested using two dielectric (liquid) environments, showing a consistent response under different H2O/DMSO cycles, yet with low sensitivities (few nm/RIU). To enhance the sensitivity of these thin film system other strategies are discussed.
关键词： Localized Surface Plasmon Resonance,Al2O3 Matrix,Au Nanoparticles,Plasmonic Sensing,Thin Films,Magnetron Sputtering
更新于2025-09-16 10:30:52