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Temporal evolution of spatial optical emission characteristics by inductively-coupled impulse sputtering (ICIS) using high power-burst 155kHz-ICP
摘要： A copper target was negatively-biased and was sputtered by bombardment of argon ion species produced 155 kHz-inductively-coupled plasma (ICP) in a burst-pulse mode for a duration of 800 μs. This system was called ICIS (Inductively-coupled impulse sputtering). The plasma density was on the order of 1019 m-3 in the ICP region. The target current density and the power density were about 0.8 A/cm2 and about 0.3 kW/cm2, respectively. Temporal evolution of the optical emission of the plasma species was discussed. The observed species were argon ions, excited argon and excited copper. The entire region consisted of the ICP, a bulk plasma and a target plasma. Argon ions produced in the ICP were transported by an ambipolar diffusion toward the target and excited argon and excited copper species were mainly produced in the target plasma. A plateau emission by argon ions and spike emission by energetic electrons which were originated from secondary electrons were seen. Gas rarefaction of argon gas also influenced the temporary evolution particularly near at the target. This was discussed using a carbon target.
关键词： Inductively-coupled impulse sputtering,glow discharge,Inductively-coupled plasma,High power impulse magnetron sputtering,HiPIMS,ICIS
更新于2025-09-23 15:19:57
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Detailed investigation of photoluminescence, structural, and elemental properties of ZnO thin films under various annealing ambient
摘要： Zinc oxide (ZnO) has extensively exploited the material in the field of optoelectronics due to its inherent wide bandgap and high electron mobility. Properties of ZnO is very sensitive to its deposition methods and conditions. We report the effect of annealing ambient (i.e. argon, nitrogen, oxygen, or vacuum) on the optical, structural and elemental properties of the RF-sputtered ZnO thin films. In this work, we have performed compressive study on the effects of annealing ambient on a donor-bound exciton peak, exciton-exciton and electron-exciton scattering using low temperature (18 K) photoluminescence measurement which is not yet well understood. We have reported dominant on the donor-bound exciton peak with the lowest full width half maximum value (~4.48 nm) for annealing in an oxygen ambient. The annealing ambient strongly influenced the elemental properties of the film and we have reported the reduction in oxygen vacancy with annealing in an oxygen ambient. This work showed that the influence of ex-situ annealing ambient on exciton emission of ZnO thin films and thus providing a tool for enhancing the optical and elemental properties of the film.
关键词： ZnO thin films,Radio-frequency sputtering,X-ray photoelectron spectroscopy,Rapid thermal processing,Photoluminescence
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Impact of Deposition of ITO on Tunnel Oxide Passivating Poly-Si Contact
摘要： In this study, we investigate the impact of the deposition of indium tin oxide (ITO) via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts. Before ITO deposition to the tunnel SiOx passivating n+ poly-Si rear-contact on the cell structure with an SiNx/Al2O3 passivating boron emitter, the implied open-circuit voltage (iVoc) and implied fill factor (iFF) were measured to be 694±10 mV and 83±0.6%, respectively. After ITO sputtering and curing annealing, the iVoc and iFF were almost fully recovered, resulting in the iVoc of 685±11 mV and iFF of 81.9±0.8%. The characteristic of fully recovered effective lifetime is attributed to unique sputtering conditions employing a very low power density at room temperature and curing.
关键词： silicon solar cell,indium tin oxide,transparent conducting oxide,DC magnetron sputtering,tunnel oxide,perovskite,tandem solar cell
更新于2025-09-23 15:19:57
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Enhancement in the efficiency of Sb2Se3 solar cells by adding low lattice mismatch CuSbSe2 hole transport layer
摘要： As an excellent light absorbing material, antimony selenide (Sb2Se3) has attracted researchers to explore its application in solar cells. At present, the e?ciency of Sb2Se3 solar cells is still too low because of the low carrier concentration and high back surface recombination. In this study, we prepared an additional CuSbSe2 ?lm as hole transport layer by co-sputtering Sb2Se3 and Cu targets. It reduced the surface roughness of the absorption layer and the back surface recombination, which was bene?cial to the collection of carriers. Due to the higher carrier concentration of CuSbSe2 ?lm and proper di?usion of Cu, the carrier concentration of the absorption layer is greatly improved, thereby e?ectively increasing the Voc of the Sb2Se3 thin ?lm solar cells. Finally, we obtained a 5.87% e?ciency for the FTO/CdS/Sb2Se3/CuSbSe2/Au solar cell, which is more than 25% higher than the basic e?ciency.
关键词： Carrier concentration,CuSbSe2,Co-sputtering,Sb2Se3,Lattice mismatch
更新于2025-09-23 15:19:57
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Room-temperature Sputtered NiOx for hysteresis-free and stable inverted Cs-FA mixed-cation perovskite solar cells
摘要： In this research, a room-temperature sputtering technology for fabricating high performance NiOx film was developed, which was applicable for inverted cesium (Cs)-formamidinium (FA) mixed-cation perovskite solar cells (PSCs). The Ni3t/Ni2t ratio in sputtered NiOx film was effectively adjusted by controlling Ar pressure while sputtering. NiOx films with appropriate Ni3t/Ni2t ratio exhibit uniform surface morphology, high transmittance, and better energy level match with the perovskite layer. By using this sputtered NiOx film as hole transporting layer, short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) of a champion inverted PSC were 19.25 mA/cm2, 1.05 V, 0.80 and 16.23%, respectively. Also, these devices remained 90.6% of their initial PCE after light soaking at a surrounding temperature of 50°C for more than 600 h.
关键词： Stability,Room-temperature,Magnetron sputtering,Cs-FA mixed-cation perovskite,NiOx HTL
更新于2025-09-23 15:19:57
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One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector
摘要： A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and sequential in-situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H2S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2S MoS2 photodiode has lower defect densities than that of Ar MoS2. We also determined that the factors affecting photodetector performance can be optimised in the 8–12 nm deposited thickness range.
关键词： H2S gas,two-dimensional layered MoS2,reactive sputtering,heterojunction photodiode
更新于2025-09-23 15:19:57
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Controlled deposition of size-selected metal nanoclusters on prepatterned substrate
摘要： An endeavor of organizing Cu nano-particles of controlled size in ordered arrays at room temperature is reported. This involves the guided deposition of size-selected nanoparticles otherwise known as nanoclusters via periodic modulation of the substrate surface. Ultra-high vacuum compatible magnetron-based gas-aggregation type source combined with a quadrupole mass filter has been employed to produce the size-selected nanoclusters whereas the surface modulations (ripples) in the nanoscale are induced by low energy oblique angle ion beam irradiation. Morphological aspects of deposited nanoclusters and the substrates were characterized by high-resolution scanning electron microscopy (HRSEM) and atomic force microscopy (AFM). The chemical composition of the deposited nanoclusters was characterized by x-ray photoelectron spectroscopy. The alignment of size-selected metal nanoclusters along the substrate-patterns is observed. Depending upon deposition conditions quality of the organization varies. The optimum angle of deposition for the improved alignment depends on the pattern parameters of the substrate.
关键词： Ion sputtering,Room-temperature organization,Metal nanocluster,Patterned substrate,Supported clusters,Scanning Electron Microscopy
更新于2025-09-23 15:19:57
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Tunable indium tin oxide thin film as saturable absorber for generation of passively Q-switched pulse erbium-doped fiber laser
摘要： A tunable Q-switched pulse erbium-doped ?ber (EDF) laser using indium tin oxide (ITO) thin-?lm-based saturable absorber (SA) is proposed and demonstrated. The SA is formed by depositing an ITO layer using DC magnetron sputtering on the ?ber ferrule, which can be easily fabricated in less than 200 s with thickness of 17.80 nm. The proposed tunable Q-switched pulse EDF laser is operated from 1540.0 to 1570.0 nm, covering a total wavelength of 30.0 nm. The generated output pulses displayed a repetition rate range between 21.70 and 94.34 kHz. The shortest pulse width retrieved is 3.22 ls at the maximum pump power of 378.6 mW, while the maximum pulse energy recorded is 30.29 nJ. To the best of the authors’ knowledge, this appears to be the ?rst proposed tunable passively Q-switched pulse EDF laser using ITO that serves as SA, which can promote ITO ?lm in the application of ultrafast photonics.
关键词： DC magnetron sputtering,Saturable absorber,Indium tin oxide,Q-switching ?ber laser
更新于2025-09-23 15:19:57
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Selective laser ablation and patterning on Ag thin films with width and depth control
摘要： Silver (Ag) films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and then ablated by a 532 nm nanosecond pulsed laser. The effects of laser fluence and defocusing amount on the width and depth of laser-ablated grooves on 100- and 600-nm-thick Ag films were systematically investigated under single- and multi-scan ablation. The results suggested that the Ag films could be successfully removed from the substrate owing to laser-induced thermoelastic force or vaporization. It was confirmed that laser fluence and defocusing amount played very important roles in controlling the width and depth of the laser-ablated grooves. In the present work, grooves with widths ranging from 53 to 196 μm and depths ranging from 56 to 196 nm were obtained on 100-nm-thick Ag films by single-scan laser ablation, and laser ablation or removal with controllable depths was realized on 600-nm-thick Ag films by adopting single- or multi-scan (i.e., scanning numbers of 1–6). Furthermore, square spiral Ag patterns were successfully obtained by single- and multi-scan laser ablation and showed good electrical conductivity in a simple circuit. This work may have great potential applications in various fields that demand width and depth control of laser ablation/removal.
关键词： Width and depth control,Laser ablation,Ag thin films,RF magnetron sputtering,Nanosecond pulsed laser
更新于2025-09-23 15:19:57
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Sputtered and heat-treated TiO2 electrodes for dye-sensitized solar cells applications
摘要： In this work, sputtering method has been used to deposit thin films of TiO2 to be utilized for dye-sensitized solar cells (DSSCs). The obtained TiO2 films have been annealed up to 550 °C. X-ray diffraction (XRD) results have shown that there is no change in the crystal structure upon annealing. In addition, two phases of TiO2, anatase and rutile, have been observed; however, the anatase phase is dominant, especially with annealing, and the particle size was between11.6 nm and 20 nm. The optical properties of the prepared and annealed films have been investigated using spectrophotometer. The transmittance was observed to decrease with annealing which can be attributed to the improvement of the crystalinity of the films upon annealing. The absorption and reflectance have been observed to decrease with annealing including some effects from the scattering of light in TiO2 films due to the multilayer structure. The prepared TiO2 films have been used to construct DSSCs. The I–V characteristics of these cells have shown a good performance with an increase of the efficiency from 1.24 to 1.98 for the as-deposited and annealed sample at 550 °C, respectively. Furthermore, the constructed DSSCs have exhibited stability and reproducibility over time.
关键词： TiO2,Sputtering method,Dye-sensitized solar cell,Conversion efficiency
更新于2025-09-23 15:19:57