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- 实验方案
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One-step Fabrication of Bio-Compatible Coordination Complex Film on Diverse Substrates for Ternary Flexible Memory
摘要： Recently, resistance random access memories (RRAMs) have been studied extensively arising from the increasing demand for information. However, its flexible device remains challenging because the active materials involved need to be nontoxic, non-polluting, distortion-tolerable, and bio-degradable as well adhesive to diverse flexible substrates. In this paper, we employed tannic acid (TA) and iron ion (Fe (III)) coordination complex as the active layer in sandwich-like (Al/active layer/substrate) device to achieve memory performance. A nontoxic, biocompatible TA-Fe (III) coordination complex was synthesized by one-step self-assembly solution. The memory performance of TA-Fe (III) retention time up to 15000 s, yield up to 53%. Furthermore, the TA-Fe (III) coordination complex can form high-quality film and show stable ternary memory behaviors on various flexible substrates, such as polyethylene terephthalate (PET), polyimide (PI), printer paper and leaf. The device can be degraded by immerse in vinegar solution. Our work will broaden the application of organic coordination complex in flexible memory device with diverse substrates.
关键词： Bio-compatible,RRAM,ternary memory,flexible
更新于2025-11-21 11:18:25
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<i>Operando</i> diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
摘要： The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.
关键词： resistive switching,HfO2,HAXPES,RRAM,interface
更新于2025-09-23 15:22:29
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Reflection coefficient of HfO <sub/>2</sub> -based RRAM in different resistance states
摘要： Impedance spectra of multiple resistive states in a stable-switching Resistive Random-Access Memory device based on a stack of Ru/HfO2/Zr/W was studied in this work. Using these observations, re?ection-coef?cients were extracted for different resistive states. Clear changes in the re?ection coef?cient for different resistive states were observed. The device in a low resistive state showed a signi?cantly higher re?ection coef?cient compared to its high resistive state. An increasing trend in the re?ection coef?cient was observed as the device state was gradually recon?gured towards lower resistances. Maximum frequency for re?ection increased with the decrease in the device area. The physics behind this observation is attributed to the interplay of oxygen ion transport among the interfacial layer, conductive ?lament, and HfO2-?lm.
关键词： resistive states,impedance spectra,HfO2,RRAM,reflection coefficient
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Transmission Electron Microscopy Study of UV-ozone Cleaned Silicon Surfaces for Application in High Efficiency Photovoltaics
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a ?eld-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/ OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： selectivity,cross-point memory,select device,resistive random access memory (RRAM),sneak path,1S1R
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - High Phosphorus-doped Seed Layer in Microcrystalline Silicon Oxide Front Contact Layers for Silicon Heterojunction Solar Cells
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： sneak path,cross-point memory,select device,resistive random access memory (RRAM),1S1R,selectivity
更新于2025-09-23 15:19:57
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Impact of Laser Attacks on the Switching Behavior of RRAM Devices
摘要： The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.
关键词： security,RRAM,resistive switching,laser attack
更新于2025-09-23 15:19:57
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Excess Random Laser Action in Memories for Hybrid Optical/Electric Logic
摘要： To surmount the scalability limitations of the nano-electronics industry, the invention of resistance random access memory (RRAM) has drawn considerable attention in recent years for being a new-era memory. Nevertheless, the data transmission speed of RRAM is confined by virtue of its sequential reading nature. To improve upon this weakness, a hybrid optical/electric memory with ION/IOFF ratio up to 105 and laser-level optical signal is proposed. The device was engineered through an adroit design of integrating a random laser (RL) into the conducting bridge random access memory (CBRAM). According to the electrochemical metallization (ECM) effect of CBRAM, agglomerative silver nanoparticles form in the insulating layer during the ON/OFF switching process, which can serve as scattering centers. By adding CdSe/ZnS quantum dots (QDs) as gain medium, a random laser system is obtained. Due to the quantum confinement effect, the device also features spectral tunable signal feedback by modulating the size of the QDs. In this study, devices with two different sizes of QDs are demonstrated such that a multiple-bits AND gate logic can be achieved. The innovation behind this RL-ECM memory might facilitate a key step toward the development of ultrahigh speed information technology.
关键词： RRAM,AND gate logic,random laser,electrochemical metallization effect,CdSe/ZnS colloidal quantum dots
更新于2025-09-23 15:19:57
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[IEEE 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Portland, OR, USA (2018.10.14-2018.10.17)] 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing
摘要： Resistive random-access memory (RRAM) has shown great potential for neuromorphic engineering, due to its ability of emulating neural network and simple structure. To mimic the brain-learning behavior, two types of neural actions, short-term plasticity (STP) and long-term potentiation (LTP), should be imitated perfectly. In this work, we propose a unique RRAM cell with a double switching layer, in which a 2D material is embedded as a separation layer. Within a proper voltage range of stress, the mobile oxygen ions are blocked by the single atomic layer, and hence the subsequent relaxation of oxygen ions leads to a volatile switching characteristic. Owing to this volatile characteristic, the proposed device can mimic neural actions, STP and LTP, by a simple pulse train with different repetitions and frequencies without the complicated pulse settings of spike-timing-dependent plasticity (STDP). For various future brain-inspired applications, different switching materials with different bind energies and relaxation times of oxygen ions can be utilized.
关键词： LTP,2D materials,neuromorphic engineering,RRAM,STP,transition-metal-oxide,volatile
更新于2025-09-19 17:15:36
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[IEEE 2019 4th Scientific International Conference Najaf (SICN) - Al-Najef, Iraq (2019.4.29-2019.4.30)] 2019 4th Scientific International Conference Najaf (SICN) - Simulation of Solar Cell and sinusoidal pulse width modulation Inverter Using MATLAB and Proteus
摘要： Resistive switching memory (RRAM) has been proposed as an artificial synapse in neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For the development of high-density neuromorphic circuits, it is essential to validate the state-of-the-art bistable RRAM and to introduce small-area building blocks serving as artificial synapses. This paper introduces a new synaptic circuit consisting of a one-transistor/one-resistor structure, where the resistive element is a HfO2 RRAM with bipolar switching. The spike-timing-dependent plasticity is demonstrated in both the deterministic and stochastic regimes of the RRAM. Finally, a fully connected neuromorphic network is simulated showing online unsupervised pattern learning and recognition for various voltages of the POST spike. The results support bistable RRAM for high-performance artificial synapses in neuromorphic circuits.
关键词： memristive device,neuromorphic network,pattern learning,Artificial synapse,resistive switching memory (RRAM)
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - A 63.3ps TDC Measurement System Based on FPGA for Pulsed Laser Ranging
摘要： The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.
关键词： random number generation (RNG),resistive-switching memory (RRAM),Memory reliability
更新于2025-09-19 17:13:59