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The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO: Al, N films
摘要： Study of Al-N simultaneous doping and thermal annealing influence on the properties of ZnO films is very important for achievement as p-type conductivity in the films as for improvement the performance of ZnO-based ultraviolet detectors. Highly-doped ZnO:Al,N films containing the Zn3N2 phase (ZnO:Al,N-Zn3N2) were grown on Si substrates by magnetron sputtering using a layer-by-layer growth technique. Our work presents a comparative study of the structure, optical and electronic properties of highly-doped as-grown and annealed ZnO:Al,N films. It was shown that the thermal annealing of ZnO:Al,N-Zn3N2 film at atmospheric conditions allows to decompose the Zn3N2 phase. The features of this phenomena on the properties of ZnO:Al,N films were investigated and discussed in detail by using X-ray diffraction, energy dispersive X-ray analysis, Raman scattering, photoluminescence, X-ray photoelectron spectroscopy and X-ray emission spectroscopy.
关键词： Radio-frequency magnetron sputtering,Zinc oxide,Nitrogen-aluminum doping,Photoluminescence,X-ray photoelectron spectroscopy,Thin films,X-ray diffraction,Raman scattering
更新于2025-09-23 15:21:01
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Effect of working pressure on the properties of RF sputtered SnS thin films and photovoltaic performance of SnS-based solar cells
摘要： Tin sulfide (SnS) thin films were deposited with a single SnS target by radio frequency magnetron sputtering while varying the working pressure (0.6 Pa to 2.6 Pa), and the structural, chemical, electricelectrical and optical properties of the SnS thin films were investigated. X-ray diffraction results showed that all the SnS thin films had a (111) plane preferred growth orientation, and X-ray photoelectron spectroscopy verified that a SnS thin film was grown with an orthorhombic crystal structure, having the binding energy of 324.5 eV. Due to a long wavelength shift in the transmittance spectrum, the optical band gap decreased from 1.56 eV to 1.47 eV. A SnS-based conventional structure solar cell (Al/ITO/i-ZnO/CdS/SnS/Mo/SLG), prepared with a SnS absorption layer and deposited at a working pressure of 2.0 Pa, achieves the highest power conversion efficiency of 0.58%. It is confirmed that this result reveal to very high efficiency compared to other reports with conventional structure.
关键词： thin films,Tin sulfide,radio frequency magnetron sputtering,single target,SnS based solar cells,working pressure
更新于2025-09-19 17:13:59
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Quantum dot light-emitting diodes with an Al-doped ZnO anode
摘要： A study of a hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide (ITO)-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. The Kelvin probe force microscopy measurement shows that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by the hole-only devices. The AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes’ injection, and result in improved charge balance. The maximum current efficiency, luminance and external quantum efficiency of the optimized QLEDs devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd/A, 102,500 cd/m2 and 12.94%, respectively.
关键词： radio-frequency magnetron sputtering,Al-doped zinc oxide,quantum light-emitting diode,transparent electrode
更新于2025-09-19 17:13:59
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Performance improvement of perovskite solar cells using vanadium oxide interface modification layer
摘要： To improve the performance of perovskite solar cells (PSCs), vanadium oxide (VOx) film was deposited as an interface modification layer (IML) by a radio frequency magnetron sputtering system. The VOx IML was utilized to modify the interface between the indium tin oxide (ITO) anode electrode and the poly(3,4-ethylenedioxythiophene)-poly (styrene sulfonate) (PEDOT:PSS) hole transport layer (HTL). The valence band maximum (VBM) of 4.94 eV of the VOx films was measured by an ultraviolet photoelectron spectroscopy (UPS). Using the optical energy bandgap and the VBM of the VOx film, the conduction band minimum (CBM) energy level was 2.12 eV. This phenomenon verified that the VOx IML could be an electron blocking layer and made a more match energy level between the work function of ITO anode electrode and the highest occupied molecular orbital (HOMO) of PEDOT:PSS HTL. Using the measurement of contact angle, the surface energy of PEDOT:PSS HTL spun on VOx IML and ITO anode electrode was evaluated as 47.76 mJ/m2 and 38.21 mJ/m2, respectively. The enhanced surface energy of the PEDOT:PSS HTL spun on VOx IML could improve the adhesion ability of the perovskite absorption layer spun on the PEDOT:PSS HTL. Consequently, the carrier extraction could be enhanced and the leakage current could be reduced by the predominant functions of VOx IML. Therefore, the performances of the PSCs were significantly improved. The power conversion efficiency (PCE) of the PSCs with VOx IML was enhanced from 9.43% to 13.69% in comparison with the conventional PSCs without VOx IML.
关键词： Vanadium oxide,Perovskite solar cells,Interface modification layer,Radio frequency magnetron sputtering system
更新于2025-09-16 10:30:52