Fabrication of high photosensitivity nanostructured n-Fe₂O₃/p-Si heterojunction photodetector by rapid thermal oxidation of chemically sprayed FeS₂ film

摘要： In this study, we have reported a novel route for the preparation of α-Fe2O3 by rapid thermal oxidation RTO of chemical sprayed FeS2 film at 550°C/20s condition under oxygen ambient. FeS2 to Fe2O3 film after RTO process. Raman shift data of Fe2O3 shows the presence of five Raman active vibration modes indexed to A1g and E1g modes. The dark and illuminated current-voltage properties of n-Fe2O3/p-Si heterojunctions have been investigated in the absence of the buffer layer and the ideality factor of n-Fe2O3/p-Si was 2.7.The responsivity of Fe2O3/Si photodetector was 0.51A/W at 500nm and 0.37A/W at 850nm. The specific detectivity of the photodetector was measured and it was around 60ns.The energy band line-up of n-Fe2O3/p-Si heterojunction was demonstrated under illumination condition.