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Rashba splitting in bilayer transition metal dichalcogenides controlled by electronic ferroelectricity
摘要： Based on ?rst-principles calculations and k · p model analyses, we uncover the coexistence and coupling of Rashba spin splitting with electronic ferroelectricity in bilayer transition metal dichalcogenides MX2 (M = Mo,W; X = S,Se,Te) with certain stacking con?gurations. The reversible spontaneous ferroelectric polarization, along the out-of-plane direction (the preferred direction for applications), totally arises from the interlayer charge transfer, rather than being governed by the ionic displacement as found in conventional ferroelectrics. The spin texture related to the Rashba spin splitting can be reversed upon inversion of the ferroelectric polarization. In particular, by applying a small in-plane compressive strain, the magnitude of Rashba band splitting can be tuned to be as large as 100 meV. These results would open up possibilities for exploring two-dimensional multiferroic physics and developing electrically controlled nanoscale spintronic devices.
关键词： Rashba splitting,bilayer transition metal dichalcogenides,spintronic devices,electronic ferroelectricity
更新于2025-09-11 14:15:04
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Shubnikov–de Haas oscillations in topological crystalline insulator SnTe(111) epitaxial films
摘要： We report on high-field (up to 30 T) magnetotransport experiments in topological crystalline insulator (111) SnTe epitaxial films. The longitudinal magnetoresistance Rxx exhibits pronounced Shubnikov–de Haas (SdH) oscillation at 4.2 K that persists up to 80 K. The second derivative (?d 2Rxx/dB 2) versus 1/B curve shows a clear beating pattern and the fast Fourier-transform analysis reveals that the SdH oscillations are composed of two close frequencies. As SnTe has elongated bulk Fermi ellipsoids, the 1/ cos θ dependence obtained in the angular evolution of both SdH frequencies is not sufficient to assure conduction via surface states. The Lifshitz-Kosevich fitting of the Rxx oscillatory component confirms the two frequencies and enables us to extract the Berry phase of the charge carriers. The most likely scenario obtained from our analysis is that the beating pattern of these quantum oscillations originates from the Rashba splitting of the bulk longitudinal ellipsoid in SnTe.
关键词： magnetotransport,Rashba splitting,Shubnikov–de Haas oscillations,SnTe,topological crystalline insulator
更新于2025-09-09 09:28:46