- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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1.3: An Evaluation Method of TFT Integrated Gate Driver for UHD Display
摘要： Reliability issues of TFT integrated gate driver are still of great concern for large size (i.e. TV) display applications, especially for a-Si:H TFT integrated panels with stressing test of high temperature and high humidity (HTHHO). In this paper, current detection method is proposed for gate driver failure identification. Measurements of 55-inch UHD TV (4K) panel with integrated gate driver are carried out. It is found that gate driver failure after HTHHO are strongly associates with via- hole open of clock bus-lines. It is demonstrated that current through clock lines will be increased with prolonged falling edge due to multi-pulses of gate driver outputs. And clock bus-line open is caused by oxygen of Cu after long operating time during the stressing test.
关键词： threshold voltage shift,reliability,TFT integrated gate driver
更新于2025-09-10 09:29:36
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13.3: <i>Invited Paper:</i> The Standardization and Performance Evaluation of Flexible Display Devices
摘要： In the flexible display devices to standardization, the development course and present situation of IEC/TC110 flexible display devices (WG8) are both introduced. Due to the variability of flexible display, the test method of flexible displays is different from traditional displays. At present, many studies have been focusing on the measuring methods of optical characteristics from the vantage point for curved displays, visual assessment of the mechanical reliability and environment tests of flexible display devices are also discussed. Considering the usage environment, the establishment of a reasonable environmental mechanical composite test method is investigated. With the development and the application of flexible and stretchable display devices, the scientific method will be developed.
关键词： mechanical reliability,Flexible display,environment tests,IEC/TC110
更新于2025-09-10 09:29:36
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[IEEE 2018 International Russian Automation Conference (RusAutoCon) - Sochi, Russia (2018.9.9-2018.9.16)] 2018 International Russian Automation Conference (RusAutoCon) - Reliability Prediction of Radio Frequency Identification Passive Tags Power Supply Systems Based on A<inf>3</inf>B<inf>5</inf> Resonant-Tunneling Diodes
摘要： The methodology of predicting radio frequency identification (RFID) passive tag power supply system reliability is developed. The reliability of a RFID passive tag power supply system is estimated in terms of a parametric failure associated with the I-V characteristics drift of resonant-tunneling diodes (RTD) that are a part of the tag rectifier under the influence of external factors beyond the tolerance limits. The methodology of the time to failure of the RFID passive tag power supply system calculation by the criterion of the minimum permissible range is presented. The developed methodology can be used in the design of RFID systems with passive UHF and SHF tags to predict their reliability under specified operating conditions. The developed algorithms and software modules can be integrated into the corresponding CAD systems.
关键词： passive tag,resonant-tunneling diode,degradation,radio frequency identification,I-V characteristic,reliability,power supply system
更新于2025-09-10 09:29:36
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Nocturnal electric vehicle charging interacting with a residential photovoltaic-battery system: a 3E (energy, economic and environmental) analysis
摘要： Increasing costs of petroleum derivatives, limitations on pollutant emissions and development of photovoltaic (PV) and electrical storage systems make it possible to spread the use of electrically powered vehicles. In this work, a 3E (energy, economic and environmental) feasibility study was carried out regarding an nocturnal electric vehicle (EV) charging in a residential user. In particular, three different EV charging scenarios were considered: use of the grid; use of a grid-connected PV system with a storage battery; use of a grid-connected PV system with a storage battery in the presence also of a residential user. Two sub-scenarios were examined that foresee the purchase of the EV as an alternative to a vehicle powered, respectively, by petrol and diesel. By considering different daily average distances travelled, a parametric study was developed in order to assess the influence of the size of the PV and storage system on the load satisfaction and solar energy utilization, economic convenience and emission savings. In general, it is not possible to simultaneously comply with all the 3E objectives and constraints. However, it is possible to select optimal EV-PV-battery combinations from a unique point of view or those that lead to a trade-off.
关键词： Emission savings,Battery Storage,Photovoltaic,Energy reliability,Electric vehicle,Economic feasibility
更新于2025-09-10 09:29:36
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Using prerecorded hemodynamic response functions in detecting prefrontal pain response: a functional near-infrared spectroscopy study
摘要： Currently, there is no method for providing a nonverbal objective assessment of pain. Recent work using functional near-infrared spectroscopy (fNIRS) has revealed its potential for objective measures. We conducted two fNIRS scans separated by 30 min and measured the hemodynamic response to the electrical noxious and innocuous stimuli over the anterior prefrontal cortex (aPFC) in 14 subjects. Based on the estimated hemodynamic response functions (HRFs), we first evaluated the test–retest reliability of using fNIRS in measuring the pain response over the aPFC. We then proposed a general linear model (GLM)-based detection model that employs the subject-specific HRFs from the first scan to detect the pain response in the second scan. Our results indicate that fNIRS has a reasonable reliability in detecting the hemodynamic changes associated with noxious events, especially in the medial portion of the aPFC. Compared with a standard HRF with a fixed shape, including the subject-specific HRFs in the GLM allows for a significant improvement in the detection sensitivity of aPFC pain response. This study supports the potential application of individualized analysis in using fNIRS and provides a robust model to perform objective determination of pain perception.
关键词： test–retest reliability,detection sensitivity,hemodynamic response function,anterior prefrontal cortex,pain,near-infrared spectroscopy
更新于2025-09-10 09:29:36
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Recent Developments Accelerating SiC Adoption
摘要： The benefits of SiC devices for use in power electronics has been long understood, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point [1,15]. It takes the confluence of many separate developments to build the necessary momentum for accelerated adoption, and we will examine these factors.
关键词： SiC MOSFET,SiC reliability,SiC Schottky Diode,SiC gate oxide,SiC Cascode,Supercascode,Silicon Carbide,SiC,SiC packaging,SiC applications,SiC epitaxy,SiC substrates
更新于2025-09-09 09:28:46
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Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application
摘要： A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and ?40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.
关键词： thin film transistor (TFT),wide temperature,high reliability,gate driver,amorphous silicon (a‐Si)
更新于2025-09-09 09:28:46
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[IEEE 2018 Seventh Balkan Conference on Lighting (BalkanLight) - Varna, Bulgaria (2018.9.20-2018.9.22)] 2018 Seventh Balkan Conference on Lighting (BalkanLight) - Reliability Investigation of TMR and DMR Systems with Global and Partial Reservation
摘要： In this article are considered three types system structures: TMR (“2-of-3”), "2-of-2" global reservation by replacing and "2-of-2" with partition reservation by replacing. Here are considered formulas for calculation of reliability the indices "System Availability" and ?Mean Time Between Failures." On this basis here is conducted an analytical research of the reliability of the three systems. In conclusion, here is made a comparative analysis to determine which structure under what conditions is most reliable.
关键词： dependability,DMR,TMR,reliability,simulation
更新于2025-09-09 09:28:46
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation
摘要： The reliability of 4H-SiC MOSFET was investigated based on TCAD simulation. The results shown that the leakage current was increased with the increment of ambient temperature while the breakdown voltage almost kept constant. Localized electric field focalizing indicated that a local breakdown region was located between P-base and JFET region. Significantly, the SiC MOSFET would be damaged from metal electrodes melting and gate oxide breaking down under short-circuit condition owing to localized hotspot.
关键词： TCAD,hotspot,reliability,4H-SiC MOSFET
更新于2025-09-09 09:28:46
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Thermal Shock Performance of DBA/AMB Substrates Plated by Ni and Ni–P Layers for High-Temperature Applications of Power Device Modules
摘要： The thermal cycling life of direct bonded aluminum (DBA) and active metal brazing (AMB) substrates with two types of plating—Ni electroplating and Ni–P electroless plating—was evaluated by thermal shock tests between ?50 and 250 ?C. AMB substrates with Al2O3 and AlN fractured only after 10 cycles, but with Si3N4 ceramic, they retained good thermal stability even beyond 1000 cycles, regardless of the metallization type. The Ni layer on the surviving AMB substrates with Si3N4 was not damaged, while a crack occurred in the Ni–P layer. For DBA substrates, fracture did not occur up to 1000 cycles for all kind of ceramics. On the other hand, the Ni–P layer was roughened and cracked according to the severe deformation of the aluminum layer, while the Ni layer was not damaged after thermal shock tests. In addition, the deformation mechanism of an Al plate on a ceramic substrate was investigated both by microstructural observation and ?nite element method (FEM) simulation, which con?rmed that grain boundary sliding was a key factor in the severe deformation of the Al layer that resulted in the cracking of the Ni–P layer. The fracture suppression in the Ni layer on DBA/AMB substrates can be attributed to its ductility and higher strength compared with those of Ni–P plating.
关键词： DBA,cracking,Ni–P electroless plating,Ni electroplating,reliability,grain boundary sliding,AMB,thermal shock test,roughness,metallization
更新于2025-09-09 09:28:46