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The mechanism of filament formation in Ag doped Ge–Se resistive switching cell
摘要： The AgGeSe2 solid state electrolyte has been studied in resistive switching. According to the I–V relationship, the possible mechanisms, including the SCLC (space-charge-limited current) model is applied to explain the result of experiments. The conductive filament formation is found to be related to the Schottky barrier between the electrode and electrolyte.
关键词： Schottky barrier,AgGeSe2,conductive filament,SCLC model,resistive switching
更新于2025-09-23 15:19:57
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Effects of TiO <sub/>2</sub> crystallinity and oxygen composition on forming characteristics in Pt/TiO <sub/>2</sub> /Pt resistive switching cells
摘要： “Forming” is a stage in resistive switching (RS) devices that occurs before switching and represents an important physical phenomenon in the universal operating mechanism of such devices. Forming in a resistance change material appears to be a kind of dielectric breakdown. In this study, we performed time-dependent forming (TDF) characterization of Pt/TiO2/Pt resistive switching cells with TiO2 layers of different crystallinities and oxygen compositions. We prepared two samples in which the grain boundary density and the density of oxygen vacancies differ, while both the TiO2 layers exhibited the similar crystal structures. Our results reveal that the Weibull slope and variation of time to forming are determined by the deposition method of the Pt bottom electrode (BE) ?lms. Moreover, the initial cell resistance and distribution of the TDF characteristics depend not only on the crystallinity but also on the oxygen composition of the TiO2 layers. The variation of time to forming increases as the distribution of initial resistance is reduced in Pt/NiO/Pt resistive switching cells with different NiO crystallinities. Conversely, the variation of time to forming decreases as the distribution of the initial resistance is reduced in the case of the Pt/TiO2/Pt cells. These results re?ect differences in both the grain boundary density (crystallinity) and the density of oxygen vacancies (oxygen composition) of resistance change materials used in the resistive switching cells. The clear difference of crystallinities and oxygen compositions might originate from differences in the oxide deposition mode during reactive sputtering.
关键词： oxygen composition,TiO2,forming,resistive switching,crystallinity
更新于2025-09-23 15:19:57
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Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories
摘要： Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low-power consumption, because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature-tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultra-low operating voltages (< 0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial applications of HP-based devices.
关键词： valence change mechanism,electrochemically metallization,all-inorganic halide perovskite,lead-free halide perovskite,resistive switching memory
更新于2025-09-19 17:15:36
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Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions
摘要： Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current-sneak and current-leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti-serial connection of two ferroelectric tunnel junctions, based on BaTiO3, with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states (“1” = “HRS+LRS” and “0” = “LRS+HRS”), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non-destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual-tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements.
关键词： ferroelectric tunnel junctions,BaTiO3,complementary resistive switching,ferroelectric
更新于2025-09-19 17:15:36
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[IEEE 2019 4th Scientific International Conference Najaf (SICN) - Al-Najef, Iraq (2019.4.29-2019.4.30)] 2019 4th Scientific International Conference Najaf (SICN) - Simulation of Solar Cell and sinusoidal pulse width modulation Inverter Using MATLAB and Proteus
摘要： Resistive switching memory (RRAM) has been proposed as an artificial synapse in neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For the development of high-density neuromorphic circuits, it is essential to validate the state-of-the-art bistable RRAM and to introduce small-area building blocks serving as artificial synapses. This paper introduces a new synaptic circuit consisting of a one-transistor/one-resistor structure, where the resistive element is a HfO2 RRAM with bipolar switching. The spike-timing-dependent plasticity is demonstrated in both the deterministic and stochastic regimes of the RRAM. Finally, a fully connected neuromorphic network is simulated showing online unsupervised pattern learning and recognition for various voltages of the POST spike. The results support bistable RRAM for high-performance artificial synapses in neuromorphic circuits.
关键词： memristive device,neuromorphic network,pattern learning,Artificial synapse,resistive switching memory (RRAM)
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - A 63.3ps TDC Measurement System Based on FPGA for Pulsed Laser Ranging
摘要： The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.
关键词： random number generation (RNG),resistive-switching memory (RRAM),Memory reliability
更新于2025-09-19 17:13:59
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Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer
摘要： Accompanied with great advantages in various fields of performance, memristors show huge potential in the next generation of mainstream storage devices. However, their random distribution of resistance switching voltage has always been one of the problems in applications. In this present work, a nonvolatile resistive switching memory device was proposed, which employed CdSe/CdS core/shell quantum dots (QDs) assembled as an electrode modification layer with the device configuration of Pt/CdSe-CdS QDs/TaOx/Ta. The device possesses multiple excellent resistance switching characteristics such as lower and more consistent set/reset threshold voltage and better endurance performance, which is considered as the effect of the electrode modification layer based CdSe/CdS core/shell QDs. A model with uneven QDs/Pt electrode interface was put forward to explain the different resistance switching behaviors, which may be beneficial to the development of existing research about memristors based on metal oxides and quantum dots.
关键词： Migration,Oxygen vacancy,Schottky interface,CdSe/CdS core/shell quantum dots,resistive switching
更新于2025-09-19 17:13:59
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Zirconia quantum dots for a nonvolatile resistive random access memory device
摘要： We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO2) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO2 (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the Ag/ZrO2/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.
关键词： Resistive switching,Spin coating,Memory device,Zirconia quantum dot
更新于2025-09-19 17:13:59
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An excellent resistive switching memory behaviour based on assembled MoSe2 nanosphere arrays
摘要： Resistive switching devices based on oxides have outstanding properties, making them a promising candidate to replace today's transistor-based computer memories as non-volatile memories, and can even find future application in neuromorphic computing. In this work, MoSe2 nanospheres with ~2.0 μm diameter were firstly synthesized by hydrothermal method. Further, a resistive switching (RS) device was prepared using as-assembled MoSe2 nanospheres array acted as functional layer. The device shows excellent RS memory behaviors with stable resistance ratio and high durability. Besides that, the mechanism of RS behavior is explained from the perspective of formation-disruption of conducting filaments (CF) formed by moving of metal ions on the surface of nanospheres by an external electric field. These characteristics give us a new inspiration for the preparation of memristors that is the memory performance of RS can be improved by assembling nanostructured arrays.
关键词： Conducting filaments,MoSe2 nanosphere,Memory device,Electronic materials,Resistive switching
更新于2025-09-16 10:30:52
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Light-controlled molecular resistive switching ferroelectric heterojunction
摘要： Molecular ferroelectrics have attained significant advancement as a promising approach towards the development of next-generation non-volatile memory devices. Herein, the semiconducting-ferroelectric heterojunctions which is composed of molecular ferroelectrics (R)-((cid:1))-3-hydroxlyquinuclidinium chloride together with organic charge transfer complex is reported. The molecular ferroelectric domain provides polarization and bistability while organic charge transfer phase allows photo-induced charge generation and transport for photovoltaic effect. By switching the direction of the polarization in the ferroelectric phase, the heterojunction-based devices show non-volatile resistive switching under external electric field and photocurrent/voltage induced by light excitation, stable fatigue properties and long retention time. Overall, the photovoltaic controlled resistive switching provides a new route for all-organic multiphase non-volatile memories.
关键词： Molecular ferroelectrics,photovoltaic effect,heterojunctions,non-volatile memory,resistive switching
更新于2025-09-16 10:30:52