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[IEEE 2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) - Boston, MA, USA (2019.5.29-2019.5.31)] 2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) - Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array
摘要： A high-performance numerical is proposed for fully coupled electrothermal simulation of electrothermal effects in resistive switching random access memory (RRAM) arrays. To enhance its capability for fast solving large scale problem, a J parallel adaptive unstructured mesh infrastructure and domain decomposition method (DDM) based double-level parallel scheme is employed to implement a parallel simulator. The performance of the developed simulator is validated by comparing with that of COMSOL Multiphysics. Further, the influence of conductive filament (CF) shape in the RRAM arrays on their electrothermal characteristics are investigated and analyzed.
关键词： Electrothermal model,numerical modeling,resistive-switching random access memory (RRAM),thermal crosstalk,parallel simulator
更新于2025-09-16 10:30:52
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<i>Operando</i> observation of resistive switching in a resistive random-access memoryby laser-excited photoemission electron microscope
摘要： We developed a laser-excited photoemission electron microscope (Laser-PEEM) that enables us to perform a non-destructive operando observation for elucidating the changes in the physical properties of electronic devices. By utilizing the Laser-PEEM, the non-volatile resistance change in the resistive random-access memory (ReRAM) was clearly visualized, even though the resistance change occurred under the electrode of the ReRAM, thanks to the deep probing depth. The operando observation of the Laser-PEEM is very promising as an observation method for various kinds of devices because the observation simultaneously provides us with morphological and electrical properties in real time.
关键词： ReRAM,Laser-PEEM,operando observation,photoemission electron microscope,resistive switching
更新于2025-09-16 10:30:52
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Recovery of cycling-induced endurance failed HfO <sub/><i>x</i> </sub> based memristive devices by utilizing oxygen plasma treatment
摘要： The oxygen ion (O2(cid:2)) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to recover the cycling-induced endurance failed HfOx based memristive devices by utilizing oxygen plasma treatment (OPT). In the as-fabricated Pt/HfOx/Pt devices, a negative SET event is observed after consecutive normal RS cycles and eventually triggers endurance failure. The appearance of the intermediate resistance state at the initial stage of the negative SET cycle indicates a prominent reduction of the migration barrier of O2(cid:2), which accounts for the occurrence of negative SET after increasing cycles. Then, we recover the devices from endurance failure by moderate OPT, which can supply the available O2(cid:2) in RS cycles. More importantly, the first recovered devices after endurance failure can be recovered again through OPT, which better proves the validity of the recovery method. This study could provide an effective approach for understanding and addressing the cycling-induced endurance failure issue in oxide-based memristive devices.
关键词： oxygen plasma treatment,HfOx,endurance failure,memristive devices,resistive switching
更新于2025-09-12 10:27:22
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Laser formation of thin-film memristor structures based on vanadium dioxide
摘要： The thin films of VO2 and the metal-oxide-metal (MOM)-structures of Au/VO2/VO2-x/Au based on them, which are promising for the use in neuromorphic electronic devices, have been obtained by the method of pulsed laser drop-free deposition on the c-sapphire substrates at room temperature. Using the cyclic I-V characteristics, a memristive effect has been revealed in the vertical geometry of the Au/VO2/VO2-x/Au MOM-structures. The x value was varied in the course of their growth by changing the pressure of buffer oxygen from 0.1 to 40 mTorr in the vacuum chamber, which provided the needed conductivity in the depleted injection layer. The dependence of memristive properties on the thickness of the semiconductor layer and concentration of the oxygen vacancies has been established. The oxygen pressure in the PLD method has been determined, at which the volatile behavior of the memristor resistive switching starts to appear at an oxide region thickness of 10/30 nm.
关键词： memristor,VO2,pulsed laser deposition,neuromorphic electronic devices,resistive switching
更新于2025-09-12 10:27:22
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MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices
摘要： Low-dimensional MXene materials including MXene quantum dots (MQDs) and nanosheets have attracted extensive attention owing to their unique structures and novel properties, but their most attractive features are still less explored than expected. A systematic study of the memory effects of MQD-based electronics is reported. Monodisperse MQDs are prepared by using a one-step facile hydrothermal synthetic method. By varying the MQD content in polyvinylpyrrolidone (PVP) hybrid composite films, the electrical conductance of an indium tin oxide (ITO)/MQD-PVP/gold (Au) sandwich structure can be tuned precisely from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. These irreversible and reversible resistive switches are capable of exhibiting write-once-read-many times (WORM) and flash memory effects, respectively. Both types of devices operate stably under retention testing, with a high on/off current ratio up to 100. The tunable memory and transient features of these hybrid films are likely due to MQD charge trapping due to their quantum confinement and dissolvability of memristive components. The results suggest that MXene nanomaterials are promising as resistive switching trigger for emerging nonvolatile memories for data storage, specially data storage security.
关键词： resistive switching,MXene quantum dots,charge trapping,flash memory,nonvolatile memory,write-once-read-many memory
更新于2025-09-12 10:27:22
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Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO?-Based Resistive Switching Devices
摘要： An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO2-based RRAM devices by inserting a thin TiO2 interface layer between electrodes and ZrO2 resistive switching layer were investigated. Compared with the Cu/ZrO2/Pt and Cu/ZrO2/TiO2/Pt devices, the Cu/TiO2/ZrO2/Pt and Cu/TiO2/ZrO2/TiO2/Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.
关键词： multilayer,Interface layer,resistive random-access memory (RRAM),resistive switching
更新于2025-09-11 14:15:04
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Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer Through Redox Induced Trap-Controlled Conduction
摘要： In this study, the abrupt set/reset behavior of the Ta/TaOx/Pt resistive switching (RS) device is reformed to a gradual mode by inserting a WOx layer between the TaOx active layer and the Ta top electrode. With the WOx acting as a redox layer to exchange oxygen vacancies at the interface, the defect states in TaOx are regulated via applying bias and the analog resistive switching is rationalized by trap-controlled space-charge-limited conduction mechanism. Continual change in device resistance can be achieved by repeated voltage sweeping. Based on the analog RS behavior, the potentiation and depression behaviors with excellent linearity are also demonstrated by identical voltage pulse stimulation and the operating current is maintained at less than 10?6 A. Furthermore, essential synaptic functions, such as paired-pulse facilitation (PPF), long- and shot-term potentiation (LTP and STP), experience dependent plasticity (EDP) and learning-relearning are also demonstrated to mimic the biological synapses for the application of neuromorphic computing.
关键词： synaptic function,tungsten oxide,space-charge-limited conduction,Analog resistive switching,redox layer
更新于2025-09-11 14:15:04
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Gyrotropic slab waveguide coupled silica microfiber-based magnetic field sensor
摘要： By controlling the polarization direction of BaTiO3 (BTO) layer, the nonvolatile and reversible resistive switching behavior of the BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) layered heterostructure have been observed. Pulsed laser deposition (PLD) technique was used to prepare it on the (001) oriented single-crystal SrTiO3 (STO) substrate, and its magnetic and electric properties were studied. Moreover, the change of the resistivity and metal-insulator transition temperature (TMI) for the LSMO layer were found to be induced by the switching of the electric field direction. The resistivity is decreased while the TMI is increased for the accumulation state of hole carriers when a negative electric field is applied to the BTO layer. By contrast, the resistivity is increased while the TMI is decreased for the depletion state of hole carriers when a positive electric field is applied to the BTO layer. This result indicates a nonvolatile and reversible resistive switching behavior in the multiferroic heterostructure control through the external electric field on ferroelectric layer, which provides a platform to develop unique electronic devices, such as nonvolatile random-access memories, sensors and memristive devices, etc.
关键词： multiferroic heterostructure,resistive switching behavior,pulsed laser deposition,nonvolatile random-access memories
更新于2025-09-11 14:15:04
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Electro-optical dual modulation on resistive switching behavior in BaTiO <sub/>3</sub> /BiFeO <sub/>3</sub> /TiO <sub/>2</sub> heterojunction
摘要： The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide (FTO) substrate by the sol–gel method. The results indicate that the Pt/BaTiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current (SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarization-modulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state (RS), which is formed by the double ferroelectric layer BaTiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory (RRAM) devices based on ferroelectric materials.
关键词： multi-state resistance,resistive switching characteristic,electro-optical dual modulation,ferroelectric multilayer heterojunction
更新于2025-09-11 14:15:04
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Trap-assisted Switching in Silicon Nanocrystal based p-i-n Device
摘要： An all Si, p-i-n device, consisting of nanostructured porous Si layer sandwiched between a p-type crystalline Si and an n-type amorphous Si, exhibits current controlled switching. Temperature dependent charge transport characteristics of the device reveal that trapping and detrapping of injected carriers at the interface of nanocrystalline Si core and the oxide shell, through impact excitation, is responsible for the observed switching. The abundance of surface inhomogeneities in the form of sub-oxides and dangling bonds create multiple charge trapping centres which in turn endow the device with switching characteristics. The density of trap states (~1011/cm2) estimated from the detrapping potential is in very good agreement with the trap density obtained directly from C-V measurements.
关键词： MIS structure,Nanostructured Si,Interface state,Resistive switching
更新于2025-09-11 14:15:04