- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
摘要： By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300-?C) annealing plays an essential role in achieving a promising (～90%) bonding yield. The effects of the post-bonding annealing are investigated by hard X-ray photoemission spectroscopy and current–voltage measurements of GaAs//Si bonding interfaces. It is found that the concentration of oxygen atoms at interfaces is reduced and the resistance decreases to 1.6–2.1 m??cm2 by the low-temperature annealing. Aluminum fluoride complexes are not observed by X-ray photoelectron spectroscopy on the exposed surfaces of separated GaAs substrates. The roughness average of the surfaces is ≈0.25–0.30 nm. The characteristics of double junction cells fabricated on the GaAs//Si junctions prepared by the SL etching are almost the same as those of cells fabricated by dissolving GaAs substrates after bonding. These results indicate that multijunction cells could be fabricated in a process sequence compatible with reuse of GaAs substrates by combining the SL etching and SAB.
关键词： Sacrificial layer etching,GaAs//Si double junction cells,Surface activated bonding,Low temperature annealing,Epitaxial lift-off
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - CdCl <sub/>2</sub> Activation of the ZnTe:As Back Contact Layer in CdTe Thin Film Solar Cells, Employing a CdS Sacrificial Layer
摘要： Incorporating ZnTe:As back contact to CdTe thin film solar cells is an attractive alternative to Cu treated ZnTe back contacts, getting rid of Cu diffusion and subsequent long term stability issues. However, the Zn loss by the formation of volatile ZnCl2 during CdCl2 deposition heat treatment for the back-contact activation remains a challenge. The aim of this work is to develop an effective activation process for ZnTe:As back contacts, which is expected to improve CdTe solar cell efficiencies. To minimize Zn loss, a thin CdS sacrificial cap layer was evaluated which was deposited on ZnTe:As via MOCVD prior to the contact layer activation step.
关键词： ZnTe back contact,photovoltaic cells,CdS sacrificial layer,CdTe,Thin films
更新于2025-09-19 17:13:59
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Sacrificial layer for laser lift-off process for flexible-display production
摘要： In this study, we developed a new sacrificial layer (SL) for laser transfer process. Metallic substrate i.e. invar foil was temporarily docked to a glass substrate using glass powder. To ensure successful delamination, the SL was pre-deposited between metal foil and glass substrate. For the first time, the SLs were amorphous gallium nitride and non-stoichiometric gallium oxide which were implemented for laser lift off (LLO) processes of metal foil. Bonding of metal foil to glass sheet was performed using heat treatment while debonding was achieved by LLO method. The laser wavelength was 355 nm which was the best fit for full absorption from SL layers. Transmission electron microscopy, element mapping, and energy dispersive X-ray spectroscopy analyses were performed for investigating elements’ migration and bonding-debonding mechanism.
关键词： Gallium oxide,Flexible displays,Gallium nitride,Laser lift-off,Sacrificial layer
更新于2025-09-11 14:15:04