[IEEE 2018 IEEE International Ultrasonics Symposium (IUS) - Kobe, Japan (2018.10.22-2018.10.25)] 2018 IEEE International Ultrasonics Symposium (IUS) - High-Volume Production and Non-Destructive Piezo-Property Mapping of 33% SC Doped Aluminium Nitride Thin Films

摘要： Scandium-doped aluminum nitride (ScAlN) thin films with 22% scandium content (Sc0.22Al0.78N) were deposited on a 100-mm sapphire substrate using a sputtering tool. The films exhibit enhanced piezoelectric properties compared to pure AlN, making them promising for microelectromechanical systems (MEMS) applications. The dielectric constant and loss tangent were measured at 100-mm and 20-mm wavelengths, showing values of εr ≈ 11.7 ± 0.2 and tanδ ≈ 0.002 ± 0.001, respectively. These results indicate high potential for voltage manufacturing and sensing devices.