- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering
摘要： A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.
关键词： Thin films,Schottky contact,Chromium-doped Zinc oxide,Sputtering,Photodetectors
更新于2025-09-23 15:23:52
-
A 600V PiN diode with partial recessed anode and double-side Schottky engineering for fast reverse recovery
摘要： In this paper, a novel 600V PiN diode for fast recovery is proposed and the operation mechanism as well as the high dynamic ruggedness of the device are analyzed in detail. The proposed structure features the alternating P/N region with partial recessed P region at anode side and the P- Schottky as well as the N Schottky contacts at both sides. In on-state, the carrier injection efficiency can be modulated by adjusting the work function of the anode P- Schottky contact (WSA), which is based on MSC (Metal-Semiconductor-Contacts) concept. As a result, the fast recovery is realized due to the reduced amount of the stored carriers and the shortened carrier extraction path. In off-state, the leakage current can be effectively suppressed attributed to the rapid pinch-off of the depletion layer. The forward voltage drop (VF) and the reverse recovery time (trr) of the proposed structure can be adjusted by changing the depth of the P- Schottky contact (tra) on the sidewall, without sacrificing the breakdown voltage (BV). The proposed structure achieves a trr of 75ns which is 45.7% and 33% lower than that of the conventional PiN and the MPS structure at the same VF of 0.965V, respectively. Moreover, the total amount of holes in the N buffer layer can be supplemented by adjusting the work function of the cathode N Schottky contact (WSC) during reverse recovery, resulting in a high-dynamic ruggedness with suppressed voltage oscillation and voltage overshoot.
关键词： Schottky contact,leakage current,dynamic characteristics,PiN diode,voltage overshoot,reverse recovery
更新于2025-09-23 15:23:52
-
Characterization of Graphite/ZnO Schottky Barriers Formed on Polar and Nonpolar ZnO Surfaces
摘要： The authors demonstrate that the electrical properties of Schottky junctions fabricated by the deposition of colloidal graphite strongly depend on the crystallographic orientation of the ZnO substrate. The current-voltage, capacitance-voltage, and impedance measurements indicate that near-ideal Schottky junctions form on c-plane, while on a- and m-plane the junctions are laterally inhomogeneous. This behavior is assigned to higher concentration of native point defects in the near-surface region of nonpolar ZnO substrates. The authors further present an extended equivalent circuit model, which corresponds to actual structure of the junctions, and sheds light on their electrical transport properties.
关键词： impedance spectroscopy,graphite,equivalent circuit,ZnO,crystal polarity,Schottky contact
更新于2025-09-23 15:21:01
-
Fabrication of ?μ-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal
摘要： Owing to the constraint of carrier transport, the dark current is relatively lower in Schottky contacted devices than that in Ohmic contacted devices, leading to a high specific detectivity in photodetectors. In this work, we prepared ε-Ga2O3 thin film by using metal-organic chemical vapor deposition, then constructed a three-pair interdigital ultraviolet solar-blind photodetector with Au electrodes as Schottky contacts. Seen from the results, this photodetector displays an outstanding wavelength selectivity with responsivity of 0.52 A W-1 responding to 250 nm wavelength light. In addition, it shows a photo-to-dark current ratio of 1.82 × 104/6.03 × 102 at 5 V under 40/5 μW cm-2 254 nm light illuminations, respectively, and a low dark current of 1.87 × 10-11 A. Correspondingly, the specific detectivity is 1.67 × 1012 Jones, and the photoresponsivity is 0.198 A W-1/52.54 mA W-1. Overall, ε-Ga2O3 prepared here is certified to be an excellent candidate material to perform high-performance solar-blind detection.
关键词： ε-Ga2O3,high detectivity,Schottky contact,solar-blind photodetector
更新于2025-09-19 17:13:59
-
ZnO nanorods array as light absorption antenna for high-gain UV photodetectors
摘要： Hydrothermal method provides the advantages of simple, low-temperature growth conditions, low cost and large surface areas for the samples. Also, exciton dissociation can be enhanced by surface plasmon resonance (SPR) due to the plasmonic absorption enhancement of incident light. In this paper, high-gain ultraviolet (UV) photodetectors based on vertically aligned ZnO nanorods (ZnO-NRs) array as light absorption antenna were presented, in which ZnO-NRs array was prepared by hydrothermal method. Our experimental data showed that the device performance of the UV photodetector Au/ZnO(ZnO-NRs:Au-NPs)/Au can be further enhanced after the gaps of ZnO-NRs array were filled with Au nanoparticles (Au-NPs). The photo-to-dark current ratio and the specific detectivity of the UV photodetector Au/ZnO(ZnO-NRs:Au-NPs)/Au reached to 1×105 and 1.84×1013 Jones at 2 V under 100 μW/cm2 365 nm illumination, respectively. The physical mechanism for the enhanced performance of the UV photodetectors is discussed.
关键词： Surface plasmon resonance (SPR),ZnO nanorods (ZnO-NRs) array,Ultraviolet (UV) photodetectors,Hydrothermal method,Schottky contact
更新于2025-09-12 10:27:22
-
Tuning the band alignment of p-type graphene-AsSb Schottky contact by electric field
摘要： By combining the electronic structures of graphene and monolayer AsSb via van der Waals force interaction, the intrinsic p-type Schottky contact can be obtained. Here, a series of theoretic calculations are performed to survey the effects of interlayer coupling and the band realignment of graphene-AsSb heterointerface. It reveals that intrinsic p-type Schottky barriers of 0.184 and 0.381 eV are formed for the two types of configurations. Besides, the intrinsic electronic properties of graphene and AsSb are roughly preserved. When the external electric field is applied, the Schottky barrier can be effectively tuned up by changing the external electric field intensity and further convert the p-type contact into the n-type contact. A variation of the Schottky barriers indicates a partial Fermi level pinning at the interfaces of AsSb. It results from the low density of interfacial states between graphene and AsSb. The barrier height of AsSb and the corresponding contact type can be flexibly tuned, which is of great importance in the design of novel transistors based two-dimensional materials and they provide meaningful guidelines.
关键词： AsSb,electric field,graphene,band alignment,Schottky contact
更新于2025-09-09 09:28:46
-
Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures
摘要： The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing temperatures have been measured by using current–voltage–temperatures (I–V –T ) and capacitance–voltage–temperatures (C–V –T ) techniques in the temperature range of 25 ?C–175 ?C. The testing temperature dependence of the barrier height (BH) and ideality factor (n) indicates the presence of inhomogeneous barrier. Tung’s model has been applied to evaluate the degree of inhomogeneity, and it is found that the 400 ?C annealed sample has the lowest T0 of 44.6 K among all the Schottky contacts. The barrier height obtained from C–V –T measurement is independent of the testing temperature, which suggests a uniform BH. The x-ray diffraction (XRD) analysis shows that there are two kinds of space groups of W when it is deposited or annealed at lower temperature ((cid:54) 500 ?C). The phase of W2C appears in the sample annealed at 600 ?C, which results in the low BH and the high T0. The 500 ?C annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC Schottky recti?er for high-temperature application.
关键词： inhomogeneity barrier,SiC,Schottky contact,x-ray diffraction (XRD)
更新于2025-09-09 09:28:46
-
Non-power-driven organic photodiode via junction engineering
摘要： Here we introduce a junction engineering approach to realize a high performance non-power-driven organic photodiode. To overcome the external power source dependency of conventional photodiodes, in this work, we try not only to implement an inherently large built-in-potential of the junction but also to utilize an inherently low charge carrier concentration of the semiconductor. The strategically designed ITO/plasma-treated ZnO/poly[2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV)/MoO3/Ag geometry showed near-ideal Schottky junction properties with a high zero-bias built-in potential of 0.54 eV, leading to a zero-bias depletion width of 470 nm. As a result, a green-selective polymeric photodiode with high zero-bias detectivity up to 5×1011 Jones and a low noise equivalent power of 2.98×10?12 W Hz?1/2 are demonstrated, revealing the possibility of a thin film, color-selective and non-power-driven polymeric photodiode for battery-free application.
关键词： non-power-drive,Schottky contact,color-selective photodiode
更新于2025-09-09 09:28:46
-
Relationship Between the Mobility and the Schottky Contact in Indium-Gallium-Zinc-Oxide Thin Film
摘要： This presents the contact mechanism to understand the relationship between the Schottky contact and tunneling phenomenon on in the IGZO (Indium Gallium Zinc Oxide) Thin Film. The tunneling transistors with bi-directional ambipolar transfer characteristics were made by high potential barriers at the Schottky contact related to the depletion layer. The IGZO thin film transistor was prepared on SiOC with various annealing temperatures of 100 °C～400 °C. The performance of TFT was improved at SiOC annealed at 300 °C with the Schottky contact. The IGS curves of TFT with SiOC annealed at 300 °C showed high Ion/Ioff ratio and without the threshold voltage shift, when applied at VDS = 0.0001 V, because of the tunneling phenomenon from the band to band of diffusion currents through deep potential barrier.
关键词： IGZO,Schottky Contact,SiOC,Diffusion Current,Ambipolar Transfer Characteristics
更新于2025-09-04 15:30:14