- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga <sub/>2</sub> O <sub/>3</sub>
摘要： Halide vapor phase epitaxy (HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc. HVPE is a non-organic chemical vapor deposition (CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga2O3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga2O3 substrates and for the fabrication of high power β-Ga2O3 devices.
关键词： halide vapor phase epitaxy,Schottky barrier diodes,epitaxy growth,Ga2O3
更新于2025-09-23 15:22:29
-
Electrical characterization of two analogous Schottky contacts produced from <i>N</i> -substituted 1,8-naphthalimide
摘要： The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs). N-Substituted 1,8-naphthalimide thin films were deposited on a p-Si substrate by spin coating and annealed at B200 1C for 60 s under an air atmosphere. Al contacts were obtained via reactive magnetron sputtering. The current voltage (I–V) characteristics of the SBDs were measured at room temperature. From the I–V characteristics, the SBDs ideality factor (n) and zero-bias barrier height values (Fb) of 1.27, 1.00, and 1.05 and 0.66 eV, 0.70 eV, and 0.64 eV were observed for the Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes, respectively. The interface state density distribution profile (Nss) as a function of (Ess–Ev) was extracted from the forward-bias I–V measurements by considering the effective barrier height and (Fe) and series resistance (Rs) of the Schottky diode. The obtained Nss plot tendency showed that the existence of interface states has no significant effect on the rectifying and capacitance characteristics. The Nss values with the 1,8-naphthalimide layer were lower than that without it. This shows that naphthalimide exhibits a strong contribution by blocking the unwanted states and some traps in the conduction mechanism, which may cause possible cracks or deep paths for carriers to travel along the junction.
关键词： magnetron sputtering,interface states,Schottky barrier diodes,spin coating,1,8-naphthalimide
更新于2025-09-23 15:19:57
-
Flexible β-Ga <sub/>2</sub> O <sub/>3</sub> Nanomembrane Schottky Barrier Diodes
摘要： Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β-Ga2O3 nanomembranes (NMs). In order to realize flexible high power β-Ga2O3 SBDs, sub-micron thick freestanding β-Ga2O3 NMs are created from a bulk β-Ga2O3 substrate and transfer-printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β-Ga2O3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β-Ga2O3 SBDs exhibit the record high critical breakdown field strength (Ec) of 1.2 MV cm?1 in the flat condition and 1.07 MV cm?1 of Ec under the bending condition. Overall, flexible β-Ga2O3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.
关键词： flexible Schottky barrier diodes,high power flexible electronics,β-Ga2O3 nanomembrane
更新于2025-09-19 17:15:36
-
Superior photoresponse MIS Schottky barrier diodes with nanoporous:Sna??WO <sub/>3</sub> films for ultraviolet photodetector application
摘要： Highly ordered nanoporous structure based MIS type photo-detector is a promising device for next-generation optoelectronic applications due to their excellent light absorption, better mechanical strength, low density with larger diffusion coefficient and charge accommodation ability. Here, we fabricated a highly sensitive MIS Schottky barrier diodes by sandwiching nanoporous:Sn-WO3 films as interfacial layer prepared by jet nebulizer spray pyrolysis technique. XRD confirmed the polycrystalline nature with monoclinic and orthorhombic phase of Sn-WO3 films, whose crystallite size gradually increased with Sn concentration. FE-SEM of Sn-WO3 composite films with 12 wt% of Sn exhibited unique surface morphology of nanoplate, nanowire and nanoporous-like structure. Optical band gap energy improved from 3.2 to 3.6 eV with Sn concentration. Establishing the nanoporous structure of Sn-WO3, we are the first to report on the photo-diode properties of Cu/nanoporous:Sn-WO3/p-Si diodes which recorded a positive photo-response with higher reverse saturation current under illumination. It is supported through enhanced detectivity of the interface layer with increasing Sn concentration. We have achieved an ultra-high responsivity of 5083.5 mA/W for the diode fabricated with 12 wt% of Sn, which is 154 times higher than pure WO3. The presence of nanoporous:Sn-WO3 layer in MIS diode recorded ~60% quantum efficiency making it ideal for the ultra-violet photo-detector application.
关键词： MIS Schottky barrier diodes,Sn-WO3,photo-detector,nanoporous,ultra-violet
更新于2025-09-19 17:13:59
-
Effect of Proton Radiation on Ultra-Wide Bandgap AlN Schottky Barrier Diodes
摘要： Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3 MeV proton irradiation at various fluences. Electrical and material characterization analysis was performed before and after each radiation fluence to quantify the change in device characteristics. It was found that the SBDs performed reliably up to a proton irradiation fluence of 5×1013 cm-2, with little or no change in the key device performance such as current, turn-on voltage, ideality factor, and breakdown voltage, etc. The electrical characteristics of the SBDs was well predicted using a standard thermionic emission theory. The performance of the SBDs showed a significant degradation after a high-fluence irritation of 5×1015 cm-2, where the current of the SBDs dropped two orders of magnitude. Material and surface characterizations, including atomic force microscopy and X-ray diffraction, indicated a consistent degradation in the AlN bulk crystal quality and a drastic increase in surface roughness. These results provide valuable information on the radiation properties of AlN electronics and can serve as important references for the future development of high performance AlN devices for extreme environment applications.
关键词： surface roughness,leakage current,radiation effects,Aluminum nitride,breakdown voltage,barrier height,Schottky barrier diodes,ideality factor,turn on voltage
更新于2025-09-11 14:15:04
-
Thermal characterization of gallium oxide Schottky barrier diodes
摘要： The higher critical electric field of β-gallium oxide (Ga2O3) gives promise to the development of next generation power electronic devices with improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-silicon carbide (SiC) and gallium nitride (GaN). However, it is expected that Ga2O3 devices will encounter serious thermal issues due to the poor thermal conductivity of the material. In this work, self-heating in Ga2O3 Schottky barrier diodes under different regimes of the diode operation was investigated using diverse optical thermography techniques including thermoreflectance thermal imaging, micro-Raman thermography, and infrared thermal microscopy. 3D coupled electro-thermal modeling was used to validate experimental results and to understand the mechanism of heat generation for the diode structures. Measured topside and cross-sectional temperature fields suggest that device and circuit engineers should account for the concentrated heat generation that occurs near the anode/Ga2O3 interface and/or the lightly doped drift layer under both forward and high voltage reverse bias conditions. Results of this study suggest that electro-thermal co-design techniques and top-side thermal management solutions are necessary to exploit the full potential of the Ga2O3 material system.
关键词： Schottky barrier diodes,thermal characterization,electro-thermal modeling,gallium oxide,optical thermography
更新于2025-09-10 09:29:36
-
Design, development and use of the spectrometer for investigating coherent THz radiation produced by micro-bunching instabilities at Diamond Light Source
摘要： Schottky barrier diodes (SBDs) are known for their low noise, ultra-fast response and excellent sensitivity. They are often implemented as detectors in the millimetre wavelength regime. Micro-bunch instabilities (MBI) have been detected at many light sources around the world including the Diamond Light Source, UK. These MBI can result in bursts of coherent synchrotron radiation (CSR) with millimetre wavelengths. More research needs to be carried out with regards to the dynamics of MBI in order to con?rm the simulations and to eventually harness the power of the CSR bursts. A single shot spectrometer has been designed and is under operation at the Diamond Light Source (DLS). It is composed of eight SBDs ranging from 33-1000 GHz. Unlike previous measurements carried out, each of the SBDs has been individually characterised thus making the results obtained comparable to simulations. In this paper, we present the assessment of each SBD in the spectrometer and the ?rst results of the spectrometer’s use in the beam.
关键词： Schottky barrier diodes,micro-bunch instabilities,spectrometer,coherent synchrotron radiation,Diamond Light Source
更新于2025-09-09 09:28:46