- 标题
- 摘要
- 关键词
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[IEEE 2020 12th International Conference on Measuring Technology and Mechatronics Automation (ICMTMA) - Phuket, Thailand (2020.2.28-2020.2.29)] 2020 12th International Conference on Measuring Technology and Mechatronics Automation (ICMTMA) - Review on PD Ultrasonic Detection Using EFPI - Part I: the Optical Fiber Sensing Technologies
摘要： We report the development of multistrata subsurface laser-modified microstructure with backgrind-assisted controlled fracture for defect-free ultrathin die fabrication. This study focuses on the microstructural properties and formation mechanisms of the subsurface Si dislocation belt layer with respect to laser scanning speed, pulse laser energies, and interstrata distances. We optimize and exploit the multistrata interactions between generated thermal shock waves and the preceding dislocation belt layers formed to initiate frontal crack fractures that separate out the individual dies from within the interior of the wafer. A new partial-SD before grinding (p-SDBG) integration scheme based upon the tandem use of three-strata SD for controlled crack fracture toward the frontside of the wafer followed by static loading from backgrinding to complete full kerf separation is demonstrated. The optimized three-strata SD process and p-SDBG integration scheme can be used to compensate for the high backside reflectance wafers to produce defect-free eight die stacks of 25-μm-thick mechanically and 46-μm-thick electrically functional 2-D NAND memory dies.
关键词： laser,semiconductor device packaging,semiconductor memory,Defects,wafer dicing,semiconductor device manufacture
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Quantification of spectral losses of Natural soiling and detailed microstructural analysis of Dust collected from Different locations in Dubai, UAE
摘要： We report the development of multistrata subsurface laser-modified microstructure with backgrind-assisted controlled fracture for defect-free ultrathin die fabrication. We study the microstructural properties and formation mechanisms of the subsurface Si dislocation belt layer with respect to laser scanning speed, pulse laser energies, and interstrata distances. We optimize and exploit the multistrata interactions between generated thermal shock waves and the preceding dislocation belt layers formed to initiate frontal crack fractures that separate out the individual dies from within the interior of the wafer. A new partial-SD before grinding (p-SDBG) integration scheme based upon the tandem use of three-strata SD for controlled crack fracture toward the frontside of the wafer followed by static loading from backgrinding to complete full kerf separation is demonstrated. The optimized three-strata SD process and p-SDBG integration scheme can be used to compensate for the high backside reflectance wafers to produce defect-free eight die stacks of 25-μm-thick mechanically and 46-μm-thick electrically functional 2-D NAND memory dies.
关键词： laser,semiconductor device packaging,semiconductor memory,Defects,wafer dicing,semiconductor device manufacture
更新于2025-09-19 17:13:59
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Electroplated gold micro studs for thermocompression bonding of UV LED chips
摘要： A bonding technology using electroplated Au micro studs for UV LEDs has been investigated. Au studs with diameter, height, and pitch of about 15 μm, 8 μm, and 30 μm, respectively were electroplated on standard UV LED chips on wafer level. The parameters for the thermocompression bonding (temperature, force, and time) were varied and a critical temperature for bonding was identified. The electroplating process, in particular the plating base, strongly influences the adhesion of the Au micro-studs and therefore the strength of the bond. Electro-optical measurements of bonded UVB LEDs as well as thermal resistance measurements and simulations of the devices show that Au-Au thermocompression bonding, using Au micro studs, can result in devices whose performance is similar to those fabricated using the conventional bonding technology of soldering with Au-Sn paste. Hence, the use of Au micro studs is an interesting alternative for bonding UV LED chips due to the ease of implementation, the stability of the bond, the comparable thermal resistance to Au-Sn, as well as the possibility to realize more complex and smaller chip geometries.
关键词： thermocompression bonding,Light-emitting diode,Semiconductor device packaging
更新于2025-09-11 14:15:04
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
摘要： The stability of GaN-on-Si HEMTs with substrate-to-source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under certain conditions. Stability analysis reveals that parasitic inductance in the substrate-loop alone is sufficient for instabilities, even with zero parasitic inductance in the gate- and power-loops. A systematic analytical stability analysis is carried out based on a small-signal equivalent circuit. The theory is verified by measurements using a PCB-embedded 600 V GaN HEMT with integrated gate driver. Adequate damping of the substrate loop resonance enables stable operation of the half-bridge module.
关键词： Semiconductor Device Packaging,Gallium Nitride,Switching Circuits,Circuit Stability,Substrate Potential,Bridge Circuits
更新于2025-09-04 15:30:14