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Entanglement teleportation with photons from quantum dots: towards a solid-state based quantum network
摘要： Semiconductor quantum dots are currently emerging as one of the most promising sources of non-classical light on which to base future quantum networks. They can generate single photons as well as pairs of entangled photons with unprecedented brightness, indistinguishability, and degree of entanglement. These features have very recently opened up the possibility to perform advanced quantum optics protocols that were previously inaccessible to single quantum emitters. In this work, we report on two experiments that use the non-local properties of entanglement to teleport quantum states: three-photon state teleportation and four-photon entanglement teleportation. We discuss all the experimental results in light of a theoretical model that we develop to account for the non-idealities of the quantum source. The excellent agreement between theory and experiment enables a deep understanding of how each parameter of the source affects the teleportation fidelities and it pinpoints the requirements needed to overcome the classical limits. Finally, our model suggests how to further improve quantum-dot entangled-photon sources for practical quantum networks.
关键词： quantum teleportation,entanglement swapping,quantum optics,semiconductor physics,quantum entanglement,quantum dot
更新于2025-09-23 15:19:57
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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - ATOMOS: An ATomistic MOdelling Solver for dissipative DFT transport in ultra-scaled HfS <sub/>2</sub> and Black phosphorus MOSFETs
摘要： A state-of-the-art DFT-NEGF based ATOmistic - MOdelling Solver (ATOMOS) was developed and used to assess the physics and fundamental-performance potential of various scaled mono-layer transition-metal-dichalcogenides and black- phosphorus (BP) MOSFETs down to a gate length of 5 nm, including the effect of electron-phonon scattering. Our study highlights the good scalability and drive-current potential of HfS2 and the impact of optical-phonon scattering for BP.
关键词： DFT NEGF,CMOS,2D-material,Semiconductor Physics,Quantum transport
更新于2025-09-11 14:15:04
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Theory of piezotronics and piezo-phototronics
摘要： Piezotronic and piezo-phototronic devices exhibit high performance and have potential applications especially in next-generation self-powered, flexible electronics and wearable systems. In these devices, a strain-induced piezoelectric field at a junction, contact, or interface can significantly modulate the carrier generation, recombination, and transport properties. This mechanism has been studied based on the theory of piezotronics and piezo-phototronics. Simulation-driven materials design and device improvements have been greatly propelled by the finite element method, density functional theory, and molecular dynamics for achieving high-performance devices. Dynamical piezoelectric fields can also control new quantum states in quantum materials, such as in topological insulators, which pave a new path for enhancing performance and for investigating the fundamental physics of quantum piezotronics and piezo-phototronics.
关键词： piezo-phototronics,piezotronics,piezoelectric field,quantum materials,semiconductor physics
更新于2025-09-04 15:30:14