- 标题
- 摘要
- 关键词
- 实验方案
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Deep p-ring trench termination: An innovative and cost-effective way to reduce silicon area
摘要： A new type of high voltage termination, namely the 'deep p-ring trench' termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliability.
关键词： Termination,High Voltage,Power Semiconductor Devices
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Ultrasonics Symposium (IUS) - Kobe, Japan (2018.10.22-2018.10.25)] 2018 IEEE International Ultrasonics Symposium (IUS) - High Frequency Optical Probe for BAW/SAW Devices
摘要： Optical properties of semiconductor devices for LED and OLED devices. We present a novel optical tool based on heterodyne interferometry that is capable of detecting surface and subsurface defects in semiconductor materials with high precision. The tool operates at frequencies up to 25 GHz and can achieve a detection limit of less than 1 nm. This method is particularly useful for quality control in the optoelectronics industry, as it allows for non-destructive testing of devices such as LEDs and OLEDs. Our results demonstrate that this tool can effectively identify defects that are not detectable with conventional optical microscopy.
关键词： non-destructive testing,defect detection,optoelectronics,semiconductor devices,LED,OLED,heterodyne interferometry
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Miramar Beach, FL, USA (2019.8.19-2019.8.21)] 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Small Batch Production and Test of Custom Support Electronics for Infrared LED Scene Projectors
摘要： This letter reports a GaN vertical trench metal–oxide–semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n+-GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemical-vapor-deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate “oxide”. This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.
关键词： GaN,vertical transistor,MOSFET,power semiconductor devices
更新于2025-09-23 15:21:01
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Infrared Cameras in Electronics Development
摘要： There has been a distinct trend in electronics development in the last few years: Packing density is increasing. Today, modern smartphones are much more powerful than they were only a few years ago, yet they are no bigger. The same applies to IT devices, automobile electronics, and consumer electronics. Accordingly, problems caused by heating must be looked out for with great care. Modern infrared measurement technology is an important aid in this regard.
关键词： electronics development,heat dissipation,Infrared cameras,semiconductor devices,temperature measurement,power loss
更新于2025-09-23 15:21:01
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Generating and Steering of Quasi-nondiffraction Beam by Substrate Integrated Waveguide Slot Array Antenna
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： MOSFET,SOI,semiconductor devices,compact modeling,ionizing radiation,Aging effects
更新于2025-09-23 15:19:57
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Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： compact modeling,SOI,ionizing radiation,semiconductor devices,MOSFET,Aging effects
更新于2025-09-23 15:19:57
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[IEEE 2020 10th Annual Computing and Communication Workshop and Conference (CCWC) - Las Vegas, NV, USA (2020.1.6-2020.1.8)] 2020 10th Annual Computing and Communication Workshop and Conference (CCWC) - DFB Laser Chip Defect Detection Based on Successive Subspace Learning
摘要： This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.
关键词： MOSFET,SOI,semiconductor devices,compact modeling,ionizing radiation,Aging effects
更新于2025-09-23 15:19:57
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Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs
摘要： In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode con?nement. The structural modi?cations included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical ?ndings, we show that by employing new material modi?cations to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm2 to less than 7 kA/cm2.
关键词： edge-emitting lasers,InGaN/GaN,numerical simulations,semiconductor devices
更新于2025-09-23 15:19:57
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[IEEE 2019 FISE-IEEE/CIGRE Conference - Living the energy Transition (FISE/CIGRE) - Medellin, Colombia (2019.12.4-2019.12.6)] 2019 FISE-IEEE/CIGRE Conference - Living the energy Transition (FISE/CIGRE) - Abating carbon emissions by means of utility-scale photovoltaics and storage: the Duke Energy Progress/Carolinas case study
摘要： A Sn-doped (100) β-Ga2O3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) β-Ga2O3 substrate. Ga2O3-based metal–oxide–semiconductor field-effect transistors with a 2-μm gate length (L G), 3.4-μm source–drain spacing (LSD), and 0.6-μm gate–drain spacing (LGD) were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the OFF-state. The gate-to-drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical limits. Further performance projections are made based on layout, process, and material optimizations to be considered in future iterations.
关键词： MOVPE,β-Ga2O3,MOSFETs,power semiconductor devices
更新于2025-09-23 15:19:57
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Stress Test of Nanosecond Semiconductor Cavity Switches with Subterahertz Gyrotrons
摘要： Nanosecond semiconductor switches based on resonant cavity with reversibly variable Q-factor are the most prospective devices for generating unlimited series of coherent pulses in subterahertz frequency bands. The pulse duration stretches from nanoseconds to tens of seconds for the same device. While the subterahertz switches have already been tested with various continuous-wave generators, e.g. semiconductor transistors and backwards wave oscillators, they are intended to be used with gyrotrons, the most powerful generators of coherent microwave radiation for subterahertz bands. Here we present results of several experiments with continuous wave (CW) and pulsed gyrotrons with frequencies around 300 GHz, pulse durations up to 10 s, and stressful microwave power up to 180 kW. A simple generalized theoretical estimation for the microwave power limit of the switches is provided and found to be in a good agreement with the performed experiments, avoiding blind zones in subterahertz measurements.
关键词： lasers,switches,waveguides,gyrotrons,Semiconductor devices,microwave resonators,generation,optical switches
更新于2025-09-19 17:15:36