[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Enhanced Tensile Strain in Ge Epitaxitial Layers Grown on Si-on-Quartz Wafers

摘要： Ge epitaxial layers grown on Si-on-“quartz” wafers reveal an enhanced in-plane tensile strain of 0.36±0.03%, which is 2–3 times larger than those grown on ordinary Si-on-insulator wafers. The enhancement is derived from an increased thermal expansion mismatch.